Results 21 to 30 of about 46,143 (280)

Metal Matrix Composite Solar Cell Metallization

E3S Web of Conferences, 2017
Advanced solar cells are moving to ever thinner formats in order to save mass and in some cases improve performance. As cells are thinned, the possibility that they may fracture or cleave due to mechanical stresses is increased. Fractures of the cell can
Wilt David M., Bradshaw Geoffrey, Gap Lt. Nathan, Abudayyeh Omar K., Nelson Cayla, Han Sang, Cox Nathanael, Rape Aaron, Landi Brian, Whipple Steve   +9 more
doaj   +1 more source

Features Multilevel Metallization Forming a Submicron Structures of Large Integrated Circuits

Фізика і хімія твердого тіла, 2017
This paper analyzesaluminum alloys that are used to form multilevel metallization in the submicron LSI/VLSI and magnetic alloys that are used for the production of magnetic disks of external storage devices with a large amount of memory.
S. P. Novosyadlyj, S. I. Boyko, M. V. Kotyk   +2 more
doaj   +1 more source

Pressure-Induced Structural Phase Transition and Metallization in Ga₂Se₃ Up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals, 2021
A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high ...
Meiling Hong, Lidong Dai, Haiying Hu, Xinyu Zhang   +3 more
doaj   +1 more source

Metallization of Extruded Briquettes (BREX) in Midrex Process

Metals, 2017
The results of the full-scale testing of the Extruded Briquettes (BREX) as the charge components of the industrial Midrex reactor are discussed. The influence of the type of binder on the degree of metallization of BREX is analyzed.
Aitber Bizhanov, Tatyana Malysheva
doaj   +1 more source

AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors [PDF]

, 1997
Full size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3'' substrate wafers. PECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide coupling capacitaces of 32.5 pF/cm ...
A Söldner-Rembold, Allport, Ameen, Ameen, Baines, Barberis, C Weber, Caccia, Ellison, Gadomski, Gow, Hoffman, Howes, Irsigler, J Ludwig, K Runge, M Hornung, M Rogalla, M Webel, Marder, Morris, Morris, Nagatani, Ohsugi, Parsey, Petrolo, Pitzl, R Geppert, R Göppert, R Irsigler, Steemers, Th Schmid, Tsay, Yeh   +33 more
core   +4 more sources

Lattice distortion in hcp rare gas solids [PDF]

, 2009
The lattice distortion parameter $\delta \equiv c/a-\sqrt{8/3}$ has been calculated as a function of molar volume for the hcp phases of He, Ar, Kr and Xe. Results from both semi-empirical potentials and density functional theory are presented.
A. Grechnev, Kittel C., Kranendonk J. V., S. M. Tretyak, Swenson C. A., Wills J. M., Yu. A. Freiman   +6 more
core   +2 more sources

Pressure‐Induced Metallization of Lead‐Free Halide Double Perovskite (NH4)2PtI6

Advanced Science, 2022
Metallization has recently garnered significant interest due to its ability to greatly facilitate chemical reactions and dramatically change the properties of materials.
Jiaxiang Wang, Lingrui Wang, Yuqiang Li, Ruijing Fu, Youjia Feng, Duanhua Chang, Yifang Yuan, Han Gao, Sheng Jiang, Fei Wang, Er‐jia Guo, Jinguang Cheng, Kai Wang, Haizhong Guo, Bo Zou   +14 more
doaj   +1 more source

The Use of a Replicating Virus Vector For in Planta Generation of Tobacco Mosaic Virus Nanorods Suitable For Metallization

Frontiers in Bioengineering and Biotechnology, 2022
The production of designer-length tobacco mosaic virus (TMV) nanorods in plants has been problematic in terms of yields, particularly when modified coat protein subunits are incorporated.
Keith Saunders, Eva C. Thuenemann, Sachin N. Shah, Hadrien Peyret, Ruth Kristianingsih, Sergio G. Lopez, Jake Richardson, George P. Lomonossoff   +7 more
doaj   +1 more source

Pressure-induced metallization in solid boron [PDF]

, 2001
Different phases of solid boron under high pressure are studied by first principles calculations. The $\alpha$-B$_{12}$ structure is found to be stable up to 270 GPa.
A. Jayaraman, C. Mailhiot, D. Li, D. U. Gubser, D. Vanderbilt, D. W. Bullett, E. D. Jemmis, F. H. Horn, F. P. Bundy, F. Siringo, G. J. Ackland, H. J. Monkhorst, H. Werheit, J. C. Jamieson, J. P. Perdew, J. Wittig, Jian Ping Lu, Jijun Zhao, K. J. Dunn, M. C. Payne, M. Fujimori, M. I. Eremets, M. M. Dacorogna, N. Vast, O. Shimomura, R. J. Nelmes, S. Lee, Y. Wang   +27 more
core   +3 more sources

Analytical determination of participation in superconducting coplanar architectures

, 2018
Superconducting qubits are sensitive to a variety of loss mechanisms which include dielectric loss from interfaces. The calculation of participation near the key interfaces of planar designs can be accomplished through an analytical description of the ...
Gambetta, Jay M., McClure, Douglas T., Murray, Conal E., Steffen, Matthias   +3 more
core   +1 more source