Results 211 to 220 of about 26,223 (245)
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MMIC transmission lines for multi-layered MMICs
1991 IEEE MTT-S International Microwave Symposium Digest, 2002Multilayered MMIC (monolithic microwave integrated circuit) transmission line configurations are proposed, and their performance is experimentally investigated. Four transmission line structures have been fabricated using polyimide films: (1) microstrip line with overlay, (2) inverted microstrip line, (3) trapezoid microstrip line, and (4) valley ...
H. Ogawa +3 more
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Uniplanar MMIC Hybrids--A Proposed New MMIC Structure
IEEE Transactions on Microwave Theory and Techniques, 1987A new "uniplanar" circuit configuration for monolithic microwave integrated circuits (MMIC's) has been proposed. It uses a combination of coplanar waveguides and slotlines on one side of the substrate. The key components for the uniplanar structure are air bridges, which provide T junctions and transitions from coplanar waveguides to slotlines or vice ...
T. Hirota, Y. Tarusawa, H. Ogawa
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2021 IEEE 19th International Symposium on Antenna Technology and Applied Electromagnetics (ANTEM), 2021
A wideband room temperature UHF-band MMIC low noise amplifier based on 0.15 μm pHEMT GaAs technology is presented. The amplifier achieves about 30 dB gain over a five-octave frequency range from 300 MHz to 1.5 GHz with minimum noise of 0.55 dB at room temperature.
Seyfollahi, Alireza +3 more
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A wideband room temperature UHF-band MMIC low noise amplifier based on 0.15 μm pHEMT GaAs technology is presented. The amplifier achieves about 30 dB gain over a five-octave frequency range from 300 MHz to 1.5 GHz with minimum noise of 0.55 dB at room temperature.
Seyfollahi, Alireza +3 more
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2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522), 2002
This paper describes the design and development of three advanced MMIC radiometers for different flight programs at three different frequencies, 18-34, 118, and 183 GHz. JASON is the follow-on flight mission to the Topex Poseidon breadboard and engineering model programs; IMAS is the integrated multispectral atmospheric sounder; CMIS is the conical ...
M. Sholley +3 more
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This paper describes the design and development of three advanced MMIC radiometers for different flight programs at three different frequencies, 18-34, 118, and 183 GHz. JASON is the follow-on flight mission to the Topex Poseidon breadboard and engineering model programs; IMAS is the integrated multispectral atmospheric sounder; CMIS is the conical ...
M. Sholley +3 more
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2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011
This paper describes the design and implementation of a new class of fully integrated oscillators in standard MMIC technology. Each oscillator comprises of a rectangular waveguide cavity resonator, a loop amplifier, and a phase shifter. Several cavities are constructed on standards GaAs substrate with quality factors of 120-170 between 40-50 GHz.
Ahmed Khalil +3 more
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This paper describes the design and implementation of a new class of fully integrated oscillators in standard MMIC technology. Each oscillator comprises of a rectangular waveguide cavity resonator, a loop amplifier, and a phase shifter. Several cavities are constructed on standards GaAs substrate with quality factors of 120-170 between 40-50 GHz.
Ahmed Khalil +3 more
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2008 IEEE International Frequency Control Symposium, 2008
This paper reports on performance of a UHF MMIC regenerative divider designed and fabricated at the Northrop Grumman Advanced Technology Labs. It uses Northrop Grumman Corporations standard GaAs HBT low phase noise process in order to achieve superior phase noise performance.
Trang Pham +5 more
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This paper reports on performance of a UHF MMIC regenerative divider designed and fabricated at the Northrop Grumman Advanced Technology Labs. It uses Northrop Grumman Corporations standard GaAs HBT low phase noise process in order to achieve superior phase noise performance.
Trang Pham +5 more
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IEEE Transactions on Microwave Theory and Techniques, 1995
Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz. This paper presents a survey on the state-of-the-art performance of this technology and on first applications, The key devices are IMPATT diodes for MM-wave power generation ...
J.-F. Luy +9 more
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Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz. This paper presents a survey on the state-of-the-art performance of this technology and on first applications, The key devices are IMPATT diodes for MM-wave power generation ...
J.-F. Luy +9 more
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IEE Colloquium on MMICs (Monolithic Microwave Integrated Circuits), 1995
This paper describes the design of a GaAs MESFET-based MMIC Voltage Controlled Oscillator (VCO). The circuit is fully monolithic, including on-chip tuning varactor, and is targeted at X-band frequencies. The small signal technique can be utilised on any modem microwave CAD package.
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This paper describes the design of a GaAs MESFET-based MMIC Voltage Controlled Oscillator (VCO). The circuit is fully monolithic, including on-chip tuning varactor, and is targeted at X-band frequencies. The small signal technique can be utilised on any modem microwave CAD package.
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1994 24th European Microwave Conference, 1994
A universally applicable broadband MMIC gate mixer for the X/Ku-band has, been designed, fabricated and measured. The mixer consists of one pseudomorphic HEMT and a few passive components. A chip size of only 0.7 mm2 is achieved. The mixer exhibits a conversion gain of ?4 dB in the frequency range of 10-16 GHz with an intermediate frequency (IF) of 100
M. Matthes +4 more
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A universally applicable broadband MMIC gate mixer for the X/Ku-band has, been designed, fabricated and measured. The mixer consists of one pseudomorphic HEMT and a few passive components. A chip size of only 0.7 mm2 is achieved. The mixer exhibits a conversion gain of ?4 dB in the frequency range of 10-16 GHz with an intermediate frequency (IF) of 100
M. Matthes +4 more
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1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.98EX271), 2002
Using a high-resistivity substrate SiGe HBT process by Daimler-Benz, MMIC oscillators with 3 dBm output power at 38 GHz as well as a 26 GHz amplifier and a 77 GHz diode mixer were fabricated. This demonstrates the potential of silicon-based ICs even for the millimeter-wave frequency range.
W. Heinrich, C. Rheinfelder
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Using a high-resistivity substrate SiGe HBT process by Daimler-Benz, MMIC oscillators with 3 dBm output power at 38 GHz as well as a 26 GHz amplifier and a 77 GHz diode mixer were fabricated. This demonstrates the potential of silicon-based ICs even for the millimeter-wave frequency range.
W. Heinrich, C. Rheinfelder
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