Results 191 to 200 of about 23,650 (265)
Some of the next articles are maybe not open access.
IEEE Microwave and Wireless Technology Letters
This letter presents a simple and novel design method for harmonic-tuned (HT) GaN monolithic microwave integrated circuit (MMIC) power amplifier (PA) using low-pass filtering (LPF) impedance matching network (MN).
Xin Jiang +7 more
semanticscholar +1 more source
This letter presents a simple and novel design method for harmonic-tuned (HT) GaN monolithic microwave integrated circuit (MMIC) power amplifier (PA) using low-pass filtering (LPF) impedance matching network (MN).
Xin Jiang +7 more
semanticscholar +1 more source
Development of MMIC rectenna at 24GHz
2013 IEEE Radio and Wireless Symposium, 2013Microwave Power Transmission (MPT) can be applied to a greater number of applications provided that higher frequency MPT systems are developed. In particular, we need high efficiency rectennas at higher frequencies. We developed a monolithic microwave integrated circuit (MMIC) rectenna with a resonant frequency of 24 GHz, with dimensions of 1 mm × 3 mm,
Ken Hatano +3 more
openaire +1 more source
A $Ka$ -Band GaAs MMIC Traveling-Wave Switch With Absorptive Characteristic
IEEE Microwave and Wireless Components Letters, 2019A 36–38-GHz monolithic microwave integrated circuit (MMIC) single-pole double-throw (SPDT) switch employing a traveling-wave concept with absorptive characteristic is presented.
Kim Tuyen Trinh +3 more
semanticscholar +1 more source
High-Power (>2 W) E-Band PA MMIC Based on High Efficiency GaN-HEMTs with Optimized Buffer
Intelligent Memory Systems, 2019The demonstration of a highly-efficient AlGaN/ GaN-HEMT technology for the realization of an E-band power amplifier MMIC with a saturated CW output power of >2 W is presented in this paper.
E. Ture +4 more
semanticscholar +1 more source
Microelectronics Reliability, 2002
This paper presents a high performance RF CMOS technology with a complete portfolio of RF andbase band components for single-chip systems. Using an optimized0.13 lm CMOS topology, fT of 86 GHz and fmax of 73 GHz are obtained, in addition to a NFmin of 1.5 dB without ground-shielded signal pad.
Chun-Yen Chang 0002 +4 more
openaire +1 more source
This paper presents a high performance RF CMOS technology with a complete portfolio of RF andbase band components for single-chip systems. Using an optimized0.13 lm CMOS topology, fT of 86 GHz and fmax of 73 GHz are obtained, in addition to a NFmin of 1.5 dB without ground-shielded signal pad.
Chun-Yen Chang 0002 +4 more
openaire +1 more source
A Compact 140-GHz, 150-mW High-Gain Power Amplifier MMIC in 250-nm InP HBT
IEEE Microwave and Wireless Components Letters, 2019We report here a compact 140-GHz, 150-mW high-gain solid-state power amplifier (SSPA) monolithic microwave integrated circuit (MMIC) demonstrated in a 250-nm InP HBT technology. It utilizes five-gain stages and two-way on-chip power combining.
Z. Griffith, M. Urteaga, P. Rowell
semanticscholar +1 more source
Application specific MMIC: a unique and affordable approach to MMIC development
IEEE 1988 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers., 2003The authors argue that application-specific monolithic microwave integrated circuits (ASMMICs) promise to simplify the development process and hence reduce the development cost and risk for the high levels of integration possible with GaAs microwave integrated circuits.
E. Turner +6 more
openaire +1 more source
International Journal of High Speed Electronics and Systems, 2003
In this paper, we describe two new DARPA initiatives addressing new concepts in compound semiconductor materials and architectures that will radically transform monolithic microwave integrated circuits (MMICs) technology to address future requirements for military and commercial sensors and mobile communication networks.
openaire +1 more source
In this paper, we describe two new DARPA initiatives addressing new concepts in compound semiconductor materials and architectures that will radically transform monolithic microwave integrated circuits (MMICs) technology to address future requirements for military and commercial sensors and mobile communication networks.
openaire +1 more source
IEEE Transactions on Components, Packaging, and Manufacturing Technology, 2019
Novel silicon interposer package solution is proposed for monolithic microwave integrated circuit (MMIC) heterogeneous integration. The GaAs/InP MMICs are integrated into the high-resistance silicon interposer by the gold ball flip-chip technique.
Yongrong Shi +4 more
semanticscholar +1 more source
Novel silicon interposer package solution is proposed for monolithic microwave integrated circuit (MMIC) heterogeneous integration. The GaAs/InP MMICs are integrated into the high-resistance silicon interposer by the gold ball flip-chip technique.
Yongrong Shi +4 more
semanticscholar +1 more source
MMIC pioneers: A historical review of MMIC development at Raytheon
2009 IEEE MTT-S International Microwave Symposium Digest, 2009The latter part of the 20th century saw the birth and rapid development of monolithic microwave integrated circuit (MMIC) technology which dramatically changed the microwave industry. Raytheon Company was at the forefront of this development. This presentation gives a historical review of the pioneering MMIC technology work done at Raytheon.
openaire +1 more source