Results 201 to 210 of about 23,650 (265)
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10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology
European Microwave Conference, 2019This paper presents the measurement results of a MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The three-stages MMIC is operating within a bandwidth of [25-31]GHz and demonstrate over this bandwidth a ...
C. Potier +14 more
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A Ka-Band High Efficiency Doherty Power Amplifier MMIC using GaN-HEMT for 5G Application
2018 IEEE MTT-S International Microwave Workshop Series on 5G Hardware and System Technologies (IMWS-5G), 2018This paper has reported a Ka-band (27-40GHz) high efficiency doherty power amplifier (DPA) MMIC (Monolithic Microwave Integrated Circuit) using GaN-HEMT for 5G application.
K. Nakatani +5 more
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17th European Microwave Conference, 1987, 1987
Improved design and implementation techniques are proposed for microwave active transversal filters. The compact configuration is achieved by using only a single MESFET to produce the required gain and phase reversal. The realization is appropriate to discrete forms and, more importantly, to MMICs.
Michael Healy +2 more
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Improved design and implementation techniques are proposed for microwave active transversal filters. The compact configuration is achieved by using only a single MESFET to produce the required gain and phase reversal. The realization is appropriate to discrete forms and, more importantly, to MMICs.
Michael Healy +2 more
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13th International Conference on Microwaves, Radar and Wireless Communications. MIKON - 2000. Conference Proceedings (IEEE Cat. No.00EX428), 2002
A new approach to the design of microwave monolithic integrated circuits (MMIC) is presented in this paper. The technology uses thick glass layers on the silicon in order to reduce parasitic capacitance introduced by metallic layers deposited on the dielectric layer of the MMIC.
W. Jablonski, J. Szczesny
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A new approach to the design of microwave monolithic integrated circuits (MMIC) is presented in this paper. The technology uses thick glass layers on the silicon in order to reduce parasitic capacitance introduced by metallic layers deposited on the dielectric layer of the MMIC.
W. Jablonski, J. Szczesny
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12W, 30% PAE, 40 GHz power amplifier MMIC using a commercially available GaN/Si process
Intelligent Memory Systems, 2018This paper presents the design and test results of a 40 GHz power amplifier MMIC fabricated with a Gallium Nitride on Silicon (GaN/Si) millimeter wave foundry process.
Joel Moron +3 more
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2008 IEEE International Frequency Control Symposium, 2008
This paper reports on performance of a UHF MMIC regenerative divider designed and fabricated at the Northrop Grumman Advanced Technology Labs. It uses Northrop Grumman Corporations standard GaAs HBT low phase noise process in order to achieve superior phase noise performance.
Trang Pham +5 more
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This paper reports on performance of a UHF MMIC regenerative divider designed and fabricated at the Northrop Grumman Advanced Technology Labs. It uses Northrop Grumman Corporations standard GaAs HBT low phase noise process in order to achieve superior phase noise performance.
Trang Pham +5 more
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The evolution of MMIC packaging
Proceedings of IEEE Antennas and Propagation Society International Symposium, 2002The authors outline current evolution in MMIC (monolithic microwave integrated circuit) packaging through a series of examples of newly emerging technologies and products, the latter chosen primarily from active array radar. Using active array modules as an example, it is possible to project some future development trends.
H.J. Kuno, T.A. Midford, J.J. Wooldridge
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European Microwave Conference, 2018
This work outlines for the first time the development and demonstration of fully inkjet-printed mm-wave 3D ramp interconnects for Ka-band active wireless devices and MCM packaging solutions.
B. Tehrani, M. Tentzeris
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This work outlines for the first time the development and demonstration of fully inkjet-printed mm-wave 3D ramp interconnects for Ka-band active wireless devices and MCM packaging solutions.
B. Tehrani, M. Tentzeris
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GaAs MMIC Low Noise Amplifier With Integrated High-Power Absorptive Receive Protection Switch
IEEE Microwave and Wireless Components Letters, 2018This letter reports a GaAs monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) with integrated high-power absorptive receive protection switch realized using 0.13- $\mu \text{m}$ GaAs pHEMT process.
C. Rao +2 more
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Three-dimensional MMIC technology for low-cost millimeter-wave MMICs
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084), 2002This paper highlights the key advantages of the three-dimensional (3D) MMIC technology in the millimeter-wave frequency band and demonstrates recently developed compact 3DMMICs. This paper also proposes a new methodology for MMIC development based on 3D/multilayer MMIC technology that greatly reduces the costs of millimeter-wave MMICs.
K. Nishikawa +5 more
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