Results 171 to 180 of about 17,794 (219)
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IEEE Transactions on Microwave Theory and Techniques, 1995
Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz. This paper presents a survey on the state-of-the-art performance of this technology and on first applications, The key devices are IMPATT diodes for MM-wave power generation ...
J.-F. Luy +9 more
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Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz. This paper presents a survey on the state-of-the-art performance of this technology and on first applications, The key devices are IMPATT diodes for MM-wave power generation ...
J.-F. Luy +9 more
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IEE Colloquium on MMICs (Monolithic Microwave Integrated Circuits), 1995
This paper describes the design of a GaAs MESFET-based MMIC Voltage Controlled Oscillator (VCO). The circuit is fully monolithic, including on-chip tuning varactor, and is targeted at X-band frequencies. The small signal technique can be utilised on any modem microwave CAD package.
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This paper describes the design of a GaAs MESFET-based MMIC Voltage Controlled Oscillator (VCO). The circuit is fully monolithic, including on-chip tuning varactor, and is targeted at X-band frequencies. The small signal technique can be utilised on any modem microwave CAD package.
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1994 24th European Microwave Conference, 1994
A universally applicable broadband MMIC gate mixer for the X/Ku-band has, been designed, fabricated and measured. The mixer consists of one pseudomorphic HEMT and a few passive components. A chip size of only 0.7 mm2 is achieved. The mixer exhibits a conversion gain of ?4 dB in the frequency range of 10-16 GHz with an intermediate frequency (IF) of 100
M. Matthes +4 more
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A universally applicable broadband MMIC gate mixer for the X/Ku-band has, been designed, fabricated and measured. The mixer consists of one pseudomorphic HEMT and a few passive components. A chip size of only 0.7 mm2 is achieved. The mixer exhibits a conversion gain of ?4 dB in the frequency range of 10-16 GHz with an intermediate frequency (IF) of 100
M. Matthes +4 more
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1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.98EX271), 2002
Using a high-resistivity substrate SiGe HBT process by Daimler-Benz, MMIC oscillators with 3 dBm output power at 38 GHz as well as a 26 GHz amplifier and a 77 GHz diode mixer were fabricated. This demonstrates the potential of silicon-based ICs even for the millimeter-wave frequency range.
W. Heinrich, C. Rheinfelder
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Using a high-resistivity substrate SiGe HBT process by Daimler-Benz, MMIC oscillators with 3 dBm output power at 38 GHz as well as a 26 GHz amplifier and a 77 GHz diode mixer were fabricated. This demonstrates the potential of silicon-based ICs even for the millimeter-wave frequency range.
W. Heinrich, C. Rheinfelder
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Three-dimensional MMIC technology for low-cost millimeter-wave MMICs
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084), 2002This paper highlights the key advantages of the three-dimensional (3D) MMIC technology in the millimeter-wave frequency band and demonstrates recently developed compact 3DMMICs. This paper also proposes a new methodology for MMIC development based on 3D/multilayer MMIC technology that greatly reduces the costs of millimeter-wave MMICs.
K. Nishikawa +5 more
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International Journal of High Speed Electronics and Systems, 2003
In this paper, we describe two new DARPA initiatives addressing new concepts in compound semiconductor materials and architectures that will radically transform monolithic microwave integrated circuits (MMICs) technology to address future requirements for military and commercial sensors and mobile communication networks.
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In this paper, we describe two new DARPA initiatives addressing new concepts in compound semiconductor materials and architectures that will radically transform monolithic microwave integrated circuits (MMICs) technology to address future requirements for military and commercial sensors and mobile communication networks.
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Three-dimensional MMIC technology for low-cost millimeter-wave MMICs
IEEE Journal of Solid-State Circuits, 2001This paper highlights the key advantages of the three-dimensional (3-D) MMIC technology in the millimeter-wave frequency band and describes recently developed compact 3-D MMICs on GaAs and Si substrates. The 3-D MMIC technology offers high integration levels, compactness, simple design procedures, and short fabrication turn-around time, resulting in ...
K. Nishikawa +6 more
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Three-dimensional MMIC technology and application to millimeter-wave MMICs
1997 Topical Symposium on Millimeter Waves. Proceedings (Cat. No.97TH8274), 2002Three-dimensional MMIC is a significantly promising technology for accurate and easy design and low-cost fabrication of millimeter-wave MMICs. Passive circuit components and amplifiers in the 50 and 60-GHz bands are demonstrated.
T. Tokumitsu +4 more
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A GaAs MMIC Digital Phase Modulator
27th European Microwave Conference, 1997, 1997The paper introduces a GaAs MMIC digital phase modulator based on a lumped quadrature hybrid. The quadrature coupler is implemented using two interleaved spiral inductors in a transformer-like configuration. The phase control is obtained electronically tuning two L-C resonators that load the coupled ports.
G. Avitabile +3 more
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Low-Loss 140-175 GHz MMIC-to-Waveguide Transitions and MMIC-to-MMIC Interconnections
2021 51st European Microwave Conference (EuMC), 2022Jian Ding +4 more
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