Results 171 to 180 of about 23,650 (265)
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Three-dimensional MMIC technology for low-cost millimeter-wave MMICs
IEEE Journal of Solid-State Circuits, 2001This paper highlights the key advantages of the three-dimensional (3-D) MMIC technology in the millimeter-wave frequency band and describes recently developed compact 3-D MMICs on GaAs and Si substrates. The 3-D MMIC technology offers high integration levels, compactness, simple design procedures, and short fabrication turn-around time, resulting in ...
K Kamogawa, B Piernas, I Toyoda
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Low-Loss 140-175 GHz MMIC-to-Waveguide Transitions and MMIC-to-MMIC Interconnections
2021 51st European Microwave Conference (EuMC), 2022Xiaobang Shang, Nick M Ridler
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MMIC technology for spectroscopy applications
SPIE Proceedings, 2010 Millimeter-wave monolithic integrated circuit (MMIC) technology is now widely recognized as a key to many modern applications in safety and security, ranging from near and far-field imaging and sensing to non-invasive material inspection. In this paper, we apply our state-of-the-art MMIC technology to the analysis of gaseous media by spectroscopic ...
Kallfass, Ingmar +6 more
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IEEE Transactions on Components, Packaging and Manufacturing Technology, 2021
Millimeter-wave (mm-wave) monolithic-microwave-integrated-circuit (MMIC) bandpass filters (BPFs) usually feature high insertion loss (IL). To this concern, an analytical method for low-loss MMIC BPFs is presented by using lumped-distributed parameters in
Guangxu Shen +2 more
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Millimeter-wave (mm-wave) monolithic-microwave-integrated-circuit (MMIC) bandpass filters (BPFs) usually feature high insertion loss (IL). To this concern, an analytical method for low-loss MMIC BPFs is presented by using lumped-distributed parameters in
Guangxu Shen +2 more
exaly +2 more sources
IEEE Transactions on Circuits and Systems - II - Express Briefs, 2023
This brief firstly presents a monolithically microwave integrated circuit (MMIC) load-modulated balanced amplifier (LMBA) developed in 0.15 $\mu {\mathrm{ m}}$ GaN process.
Ziming Zhao +7 more
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This brief firstly presents a monolithically microwave integrated circuit (MMIC) load-modulated balanced amplifier (LMBA) developed in 0.15 $\mu {\mathrm{ m}}$ GaN process.
Ziming Zhao +7 more
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C-Band High Harmonics Suppression GaN Power Amplifier MMIC for Multiradar Network Application
IEEE Microwave and Wireless Technology Letters, 2023This letter presents a C-band 50-W high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) based on the 0.25- $\mu \text{m}$ gallium nitride (GaN) high electron mobility transistor (HEMT) process.
Fan Yang, Leijun Song, Yuehang Xu
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IEEE Microwave and Wireless Components Letters, 2022
In this letter, the modified elliptic low-pass filtering (LPF) matching network (MN) is proposed for harmonic suppression of a wideband gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) power amplifier (PA) at millimeter-wave (mm-wave).
Peng Chen +6 more
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In this letter, the modified elliptic low-pass filtering (LPF) matching network (MN) is proposed for harmonic suppression of a wideband gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) power amplifier (PA) at millimeter-wave (mm-wave).
Peng Chen +6 more
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A Reconfigurable S-/X-Band GaN MMIC Power Amplifier
IEEE Microwave and Wireless Components Letters, 2022A reconfigurable $S$ -/ $X$ -band monolithic microwave integrated circuit (MMIC) power amplifier (PA) utilizing a 0.25- $\mu \text{m}$ GaN HEMT technology is presented in this letter.
Li Kang, Wen-hua Chen, Aimin Wu
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Continuous Broadband GaAs and GaN MMIC Phase Shifters
IEEE Microwave and Wireless Components Letters, 2022We describe the design of two broadband monolithic microwave integrated circuit (MMIC) loaded-line reflective phase shifters and their performance over the 6–12-GHz band.
Megan C. Robinson +2 more
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A 28-GHz-Band GaN HEMT MMIC Doherty Power Amplifier Designed by Load Resistance Division Adjustment
European Microwave Integrated Circuits Conference, 2022A 28-GHz-band GaN HEMT MMIC Doherty power amplifier has been developed by using 0.15-µm GaN HEMT MMIC technology. The Doherty amplifier was designed by adaptively adjusting a load resistance division to a carrier amplifier (CA) and a peaking amplifier ...
R. Ishikawa +3 more
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