Results 71 to 80 of about 26,223 (245)
IEEE Journal of the Electron Devices SocietyThis paper demonstrated high-output-power and high-efficiency power amplifier (PA) monolithic microwave-integrated circuit (MMIC) at 300-GHz band (252–296 GHz) with the use of InPbased metal–oxide–semiconductor high-electron-mobility
Yusuke Kumazaki +6 more
doaj +1 more source
Active and Passive Electronic Components, 2002 A generalized three-dimensional computational numerical code is developed for Monolithic Microwave Integrated Circuit (MMIC) structures based on a full wave approach using integral equation techniques.
R. Makri +2 more
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A wideband CPW ring power combiner with low insertion loss and high port isolation [PDF]
, 2012 In this paper we present a coplanar waveguide (CPW)-based ring power combiner that exhibits less than 0.8 dB insertion loss, better than 15 dB port match and higher than 22 dB isolation loss over the frequency range from 50 GHz to 100 GHz.
Cumming, D.R.S. +4 more
core +1 more source
MMIC technology for advanced space communications systems [PDF]
The current NASA program for 20 and 30 GHz monolithic microwave integrated circuit (MMIC) technology is reviewed. The advantages of MMIC are discussed.
Anzic, G. +2 more
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X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling
Electronics LettersThis paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling.
Junhyung Jeong +6 more
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Time domain reflectometry applied to MMIC passive component modeling [PDF]
, 1989 The time domain facilities of a network analyzer, combined with the tools of network synthesis, were recently used for experimental modeling of discontinuities in an S-parameter measurement set, so as to allow the instrument calibration directly to the ...
Beccari, C. +2 more
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Very High Volume GaAs MMICs [PDF]
30th European Microwave Conference, 2000, 2000 The increase in demand for high performance semiconductor devices to supply the mobile communications market has led to dramatic developments in the compound semiconductor business, with the launch of a number of 6” GaAs foundries. The background to the demand for very high volumes of RF products for this market is discussed, together with the ...
openaire +2 more sources
Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag
physica status solidi (a), Volume 222, Issue 8, April 2025.This study explores theeffects of SiN‐based passivation layers and gate‐drain distances (Lgd) on the large signal performance of GaN HEMT devices, underscoring thesignificant role of surface traps. It is demonstrated that either improvingpassivation quality or reducing the gate‐drain can mitigate trapping effects. Measured and simulated drainlag versus
Hossein Yazdani +6 more
wiley +1 more source
A K-band MMIC filter based on GaAs IPD technology
Dianzi Jishu Yingyong, 2018 This paper develop a high performance K-band Hair-Pin MMIC band-pass filter which is based on GaAs IPD technology. The measurement result shows that at the operation frequency of 19.5～21.3 GHz, the insertion loss of this filter is below 2.6 dB, the ...
Lu Yu
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A design concept for an MMIC microstrip phased array [PDF]
A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by ...
Acosta, R., Lee, R. Q., Smetana, J.
core +1 more source