Results 61 to 70 of about 11,269 (214)
Electronics Letters, Volume 62, Issue 1, January/December 2026.This paper presents a fully‐integrated frequency‐modulated continuous‐wave (FMCW) transceiver chip operating from 55 to 66 GHz, fabricated in a 65 nm silicon‐on‐insulator (SOI) CMOS process. The chip incorporates a wide‐tuning‐range voltage‐controlled oscillator (VCO) with four digitally selectable states, a driver amplifier, a power amplifier, a low ...
Yulong Xu +4 more
wiley +1 more source
MMIC technology for advanced space communications systems [PDF]
, 1984 The current NASA program for 20 and 30 GHz monolithic microwave integrated circuit (MMIC) technology is reviewed. The advantages of MMIC are discussed.
Anzic, G. +2 more
core
A balanced InGaP-GaAs Colpitt-VCO MMIC with ultra-low phase noise [PDF]
, 2004 A balanced VCO-MMIC based on a coupled Colpitt topology with a fully integrated tank is presented. The design was focused on achieving minimum phase noise by optimization of the tank-circuit including the varactor, maximizing the tank-amplitude, and
Zirath, Herbert +2 more
core +1 more source
A 0.85–1.25 GHz On‐Chip Tunable Bandpass Filter Using Cascaded Parametric Mixing in GaAs MMIC
Electronics Letters, Volume 62, Issue 1, January/December 2026.This paper demonstrates the first fully integrated GaAs MMIC implementation of a parametric frequency‐translated bandpass filter using cascaded up‐ and down‐conversion stages around a fixed idler resonance. The proposed architecture enables continuous tuning from 0.85 to 1.25 GHz with near‐unity gain, <3 dB insertion loss and >30 dB out‐of‐band ...
Sean C. Chen +3 more
wiley +1 more source
Analysis of an Impedance‐Adaptive W‐Band GaN MMIC Power Amplifier
IET Microwaves, Antennas &Propagation, Volume 20, Issue 1, January/December 2026.This paper presents a W‐band GaN MMIC power amplifier with an integrated reconfigurable matching network implemented in a 40‐nm GaN‐on‐SiC process. The three‐stage PA achieves 18.1 dB gain and 25.3 dBm output power at 77 GHz, demonstrating the feasibility of embedding reconfigurable elements in millimetre‐wave PAs.
Stefan Stroessner +4 more
wiley +1 more source
On‐chip GaAs‐based dual‐band bandpass filters/isolators (DBPFIs)
Electronics Letters, 2023 MMIC co‐designed RF components exhibiting the collocated RF signal processing actions of a dual‐band bandpass filter and an RF isolator (DBPFI) are presented. They are based on in‐parallel cascaded bandpass filters/isolators that operate at two different
Andrea Ashley, Dimitra Psychogiou
doaj +1 more source
Sedimentology, Volume 73, Issue 1, Page 40-82, January 2026.ABSTRACT Complex stratigraphic arrangements may be generated through lateral facies transitions from the strata of aeolian depositional systems into bordering peritidal deposits. In such scenarios, sedimentary architectural complexity and associated facies heterogeneities are governed by the interplay between autogenic processes inherent to tidal ...
Victor J. P. Hême de Lacotte +5 more
wiley +1 more source
On stability in the MMIC distributed amplifier
, 1994 A study aimed at avoiding the high‐frequency oscillation phenomenon in the MMIC distributed amplifier is presented. The results obtained are applicable to both the design simulation step and the bias tuning phase on the realized amplifier.
D'Agostino, Stefano +3 more
core +3 more sources
Multiband Crescent Array Antennas for THz Applications
Journal of Electrical and Computer Engineering, Volume 2026, Issue 1, 2026.The design and analysis of multiband crescent array antennas for THz applications are proposed in this article. Beginning with a 1 × 2 array, then on to a 1 × 4 array, and finally to a 2 × 4 crescent patch array, the analysis is carried out from a single‐element THz crescent patch.
Harini V. +5 more
wiley +1 more source
International Journal of RF and Microwave Computer-Aided Engineering, Volume 2026, Issue 1, 2026.This paper presents the design and implementation of a high‐efficiency two‐way Doherty power amplifier (DPA) for sub‐6 GHz 5G New Radio (NR) applications, specifically targeting the n78 band (3.3–3.8 GHz). The proposed gallium nitride (GaN)‐based DPA delivers a peak output power of 42.5 dBm, a gain of 13.3 dB, and a maximum power‐added efficiency (PAE)
Tugba Haykir Ergin +2 more
wiley +1 more source