Results 71 to 80 of about 17,794 (219)
Very High Volume GaAs MMICs [PDF]
30th European Microwave Conference, 2000, 2000 The increase in demand for high performance semiconductor devices to supply the mobile communications market has led to dramatic developments in the compound semiconductor business, with the launch of a number of 6” GaAs foundries. The background to the demand for very high volumes of RF products for this market is discussed, together with the ...
openaire +2 more sources
Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag
physica status solidi (a), Volume 222, Issue 8, April 2025.This study explores theeffects of SiN‐based passivation layers and gate‐drain distances (Lgd) on the large signal performance of GaN HEMT devices, underscoring thesignificant role of surface traps. It is demonstrated that either improvingpassivation quality or reducing the gate‐drain can mitigate trapping effects. Measured and simulated drainlag versus
Hossein Yazdani +6 more
wiley +1 more source
A wideband CPW ring power combiner with low insertion loss and high port isolation [PDF]
, 2012 In this paper we present a coplanar waveguide (CPW)-based ring power combiner that exhibits less than 0.8 dB insertion loss, better than 15 dB port match and higher than 22 dB isolation loss over the frequency range from 50 GHz to 100 GHz.
Cumming, D.R.S. +4 more
core +1 more source
Microbial Biotechnology, Volume 18, Issue 4, April 2025.Single‐plasmid inducible‐replication system for biological nanorod production was developed based on the knowledge of replication and biology of the Ff (f1, fd or M13) bacteriophages from which they are derived. Design described here overcomes the replication bottlenecks, adjusts the production of the major coat protein and simplifies the preproduction
Rayén Ignacia León‐Quezada +5 more
wiley +1 more source
A K-band MMIC filter based on GaAs IPD technology
Dianzi Jishu Yingyong, 2018 This paper develop a high performance K-band Hair-Pin MMIC band-pass filter which is based on GaAs IPD technology. The measurement result shows that at the operation frequency of 19.5～21.3 GHz, the insertion loss of this filter is below 2.6 dB, the ...
Lu Yu
doaj +1 more source
Geophysical Research Letters, Volume 52, Issue 4, 28 February 2025.Abstract The Surface Water and Ocean Topography (SWOT) mission offers new insights into submesoscale ocean processes. Realizing this requires careful consideration of other geophysical signals such as the signal delay induced by water vapor in the troposphere.
Andrea Hay +4 more
wiley +1 more source
A 10-W GaN on SiC CPW MMIC High-Power Amplifier With 44.53% PAE for X-Band AESA Radar Applications
ElectricaThis article presents a novel X-band gallium nitride (GaN) on silicon carbide (SiC) co-planar waveguide (CPW) monolithic microwave integrated circuit (MMIC) highpower amplifier (HPA) design for radar applications. In design, 0.25 μm γ-shape gate and high
Galip Orkun Arıcan +1 more
doaj +1 more source
Design of an optically controlled Ka-band GaAs MMIC phased-array antenna [PDF]
Phased array antennas long were investigated to support the agile, multibeam radiating apertures with rapid reconfigurability needs of radar and communications.
Bhasin, Kul B. +3 more
core +1 more source
Multifunction MMIC For Miniaturized Solid State Switch Matrix [PDF]
, 2003 This paper describes a new multifunction MMIC expressly designed for a reconfiguration matrix equipment.This MMIC has been developed using a standard PHEMT process and includes two switches,a totally switchable-off amplifier and a temperature ...
Cavanna, T. +3 more
core +1 more source
A Fully Integrated 0.48 THz FMCW Radar Sensor in a SiGe Technology
IEEE Journal of MicrowavesThe THz gap has been a significant research objective for photonics and electronics for decades. This work introduces a fully integrated frequency modulated continuous wave (FMCW) radar sensor with a center frequency of 0.48 THz, realized in a silicon ...
Florian Vogelsang +6 more
doaj +1 more source