Results 71 to 80 of about 23,650 (265)
Thermal-aware GaN/Si MMIC design for space applications
Thermal stress in microwave power devices is a major issue for space applications, with a detrimental impact on the operating life-time of MMICs on board satellites. To limit this, derating rules are applied to the maximum operating junction temperature,
C. Ramella +8 more
semanticscholar +1 more source
A 0.85–1.25 GHz On‐Chip Tunable Bandpass Filter Using Cascaded Parametric Mixing in GaAs MMIC
This paper demonstrates the first fully integrated GaAs MMIC implementation of a parametric frequency‐translated bandpass filter using cascaded up‐ and down‐conversion stages around a fixed idler resonance. The proposed architecture enables continuous tuning from 0.85 to 1.25 GHz with near‐unity gain, <3 dB insertion loss and >30 dB out‐of‐band ...
Sean C. Chen +3 more
wiley +1 more source
Improvement of microwave planar active filters with MMIC technology [PDF]
In this paper, new ranges of GaAs MMIC circuit applications at microwaves are presented with the development of original planar active filters in this technology.
Guillon, P. +7 more
core +1 more source
ABSTRACT Complex stratigraphic arrangements may be generated through lateral facies transitions from the strata of aeolian depositional systems into bordering peritidal deposits. In such scenarios, sedimentary architectural complexity and associated facies heterogeneities are governed by the interplay between autogenic processes inherent to tidal ...
Victor J. P. Hême de Lacotte +5 more
wiley +1 more source
This paper presents the design and implementation of a high‐efficiency two‐way Doherty power amplifier (DPA) for sub‐6 GHz 5G New Radio (NR) applications, specifically targeting the n78 band (3.3–3.8 GHz). The proposed gallium nitride (GaN)‐based DPA delivers a peak output power of 42.5 dBm, a gain of 13.3 dB, and a maximum power‐added efficiency (PAE)
Tugba Haykir Ergin +2 more
wiley +1 more source
On‐chip GaAs‐based dual‐band bandpass filters/isolators (DBPFIs)
MMIC co‐designed RF components exhibiting the collocated RF signal processing actions of a dual‐band bandpass filter and an RF isolator (DBPFI) are presented. They are based on in‐parallel cascaded bandpass filters/isolators that operate at two different
Andrea Ashley, Dimitra Psychogiou
doaj +1 more source
Impact of Parasitic Conductive Interfaces on the DC and RF Performance of GaN‐on‐GaN HEMTs
GaN‐on‐GaN HEMTs suffering from a parasitic conductive interface show a power added efficiency drop from an expected 50 % to 15 %. The interface forms on GaN wafers prior to epitaxy due to Si contamination to absorb RF power, introduce propagation loss and loading effects, reduce gain by 50 %, and fmax and Pout by 40 % compared to GaN‐on‐SiC HEMTs ...
Amer Bassal +6 more
wiley +1 more source
Broadband AlGaN/GaN MMIC amplifier
A broadband Monolithic Microwave Integrated Circuit (MMIC) amplifier, with 12 ± 2 dB gain across the 0.1–27 GHz band has been demonstrated using the AlGaN/GaN on SiC technology.
Ali M. Darwish +3 more
core +1 more source
MMIC technology and its applications to communication systems [PDF]
MMIC technology has recently progressed rapidly to practical application in communication areas. However, practical application is not yet proceeding very actively.
Aikawa, Masayoshi
core +1 more source
ABSTRACT This research examines the physical and microstructural properties of New Zealand faba beans (Vicia faba), with a focus on their influence on swelling, hydration, and cooking characteristics. Four native varieties (Early Long Pod, Evergreen, Coles Dwarf, and Janet) were studied.
Navneet +3 more
wiley +1 more source

