Results 51 to 60 of about 1,181 (174)

An Examination of Aerosol Jet‐Printed Surface Roughness and its Impact on the Performance of High‐Frequency Electronics

Advanced Engineering Materials, Volume 27, Issue 15, August 2025.
This study explores aerosol jet‐printed (AJP) surface roughness, its effects on the performance of microwave electronics, and its process contributors. First, an electromagnetic model is vetted for AJP's unique roughness signature. Simulations are built which show process‐induced roughness is as significant as conductor resistivity in driving microwave
Christopher Areias, Alkim Akyurtlu
wiley   +1 more source

High Output Power and Efficiency 300-GHz Band InP-Based MOS-HEMT Power Amplifiers With Composite-Channel and Double-Side Doping

IEEE Journal of the Electron Devices Society
This paper demonstrated high-output-power and high-efficiency power amplifier (PA) monolithic microwave-integrated circuit (MMIC) at 300-GHz band (252–296 GHz) with the use of InPbased metal–oxide–semiconductor high-electron-mobility
Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki   +6 more
doaj   +1 more source

Development of A General Computation Agorithm for the Analysis of MMIC Structures Based on A Three-Dimensional Model

Active and Passive Electronic Components, 2002
A generalized three-dimensional computational numerical code is developed for Monolithic Microwave Integrated Circuit (MMIC) structures based on a full wave approach using integral equation techniques.
R. Makri, M. Gargalakos, N. K. Uzunoglu   +2 more
doaj   +1 more source

A Temperature‐Dependent Linear RF Switch Model for Common‐Gate High‐Frequency GaN HEMT Transistors

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Volume 38, Issue 4, July/August 2025.
ABSTRACT This paper reports a temperature dependent high frequency monolithic microwave integrated circuit (MMIC) linear radio frequency (RF) switch modeling technique for gallium nitride (GaN) RF switch transistors. Linear model extraction has primarily focused on common source (CS) RF transistors.
Dave Frey, Dashiel Matlock, Edward Gebara, Nicholas C. Miller   +3 more
wiley   +1 more source

X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling

Electronics Letters
This paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling.
Junhyung Jeong, Kyujun Cho, Honggu Ji, Woojin Chang, Jongmin Lee, Byoung‐gue Min, Dongmin Kang   +6 more
doaj   +1 more source

Characterisation of active loads for MMIC's

, 1997
Active loads have been fabricated and tested, and their characterisation addressed for use in microwave CAD programs. The first results show that non-ideal (parasitic) effects are present that can easily be evaluated. Comparison with a three-terminal FET structure shows that a characterisation in terms of an equivalent circuit is feasible, and suggests
GIANNINI, FRANCO, Leuzzi, G, SERINO, ANTONIO   +2 more
openaire   +3 more sources

Population genetics of Zamia decumbens (Zamiaceae, Cycadales), an endangered cycad from the Maya Mountains of Belize

Plant Species Biology, Volume 40, Issue 4, Page 324-340, July 2025.
We utilized 10 microsatellite loci to examine the genetic diversity, genetic structure, and demographic history of Zamia decumbens Calonje, Meerman, M.P. Griff. & Hoese, an endangered cycad species occurring in small disjunct populations on karst topography within the Maya Mountains of Belize.
Michael Calonje, Alan W. Meerow, Jan Meerman, Javier Francisco‐Ortega, M. Patrick Griffith   +4 more
wiley   +1 more source

A Survey of Phase Shifters for Microwave Phased Array Systems

International Journal of Circuit Theory and Applications, Volume 53, Issue 6, Page 3719-3739, June 2025.
ABSTRACT Phased Array Systems (PASs) are extensively used in radar and telecommunication systems for diverse applications, including military surveillance and wireless broadband communication. Besides, they are becoming increasingly indispensable in modern applications such as multi‐function phased array radars for weather monitoring and aircraft ...
M. Kebe, M. C. E. Yagoub, R. E. Amaya
wiley   +1 more source

A 10-W GaN on SiC CPW MMIC High-Power Amplifier With 44.53% PAE for X-Band AESA Radar Applications

Electrica
This article presents a novel X-band gallium nitride (GaN) on silicon carbide (SiC) co-planar waveguide (CPW) monolithic microwave integrated circuit (MMIC) highpower amplifier (HPA) design for radar applications. In design, 0.25 μm γ-shape gate and high
Galip Orkun Arıcan, Burak Alptuğ Yılmaz   +1 more
doaj   +1 more source

A K-band MMIC filter based on GaAs IPD technology

Dianzi Jishu Yingyong, 2018
This paper develop a high performance K-band Hair-Pin MMIC band-pass filter which is based on GaAs IPD technology. The measurement result shows that at the operation frequency of 19.5～21.3 GHz, the insertion loss of this filter is below 2.6 dB, the ...
Lu Yu
doaj   +1 more source