An Analytical Scalable Lumped-Element Model for GaN on Si Inductors
IEEE Access, 2020 In this paper, a wide-band distributed model that can approximate the behaviour of square and octagonal inductors, both with and without tapering, is presented.
Mario San Miguel Montesdeoca +5 more
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Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors
AIP Advances, 2019 This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky ...
Ajay Kumar Visvkarma +6 more
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High Dynamic-Range and Very Low Noise K-Band p-HEMT LNA MMIC for LMDS and Satellite Communication [PDF]
, 2001 An excellent noise figure and high linearity, K-band p-HEMT LNA MMIC, that incorporates single-bias configuration and negative feedback circuit, has be en developed for LMDS (Local Multi-point Distribution Service) and satellite communication.
Fukaya, J. +3 more
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Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise Figure [PDF]
Journal of Electromagnetic Engineering and ScienceIn this work, an X-band gallium nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with a switched impedance network for improved noise performance is designed and fabricated using a 0.25 μm GaN WIN-semiconductor ...
Byeong-Uk Lee
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Cryogenic probe station for on-wafer characterization of electrical devices [PDF]
, 2012 A probe station, suitable for the electrical characterization of integrated circuits at cryogenic temperatures is presented. The unique design incorporates all moving components inside the cryostat at room temperature, greatly simplifying the design and ...
Cleary, Kieran +2 more
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Research progress on terahertz integrated power amplifier
Dianzi Jishu Yingyong, 2019 In this paper, the current development status and bottleneck problems of terahertz science and technology are presented. The emphasis of discussion is on research progress of the core component in terahertz circuits, monolithic integrated power amplifier.
Han Jiangan, Cheng Xu
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Ultra-Wideband Asymmetric Impedance Transformer Design for High-Power Amplifier MMICs [PDF]
Journal of Electromagnetic Engineering and ScienceIn this study, an asymmetric impedance transformer is proposed for broadband high-power amplifier (HPA) monolithic microwave-integrated circuits (MMICs).
Jihoon Kim
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A Wideband High-Efficiency GaN MMIC Power Amplifier for Sub-6-GHz Applications
Micromachines, 2022 The monolithic microwave integrated circuit (MMIC) power amplifiers serve an essential and critical role in RF transmit/receive (T/R) modules of phased array radar systems, mobile communication systems and satellite systems.
Liulin Hu +6 more
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Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC [PDF]
, 2016 In this paper we demonstrate a THz microstrip stack antenna on GaN-on-low resistivity silicon substrates (ρ < 40 Ω.cm). To reduce losses caused by the substrate and to enhance performance of the integrated antenna at THz frequencies, the driven patch ...
Benakaprasad, B. +7 more
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Time domain reflectometry applied to MMIC passive component modeling [PDF]
, 1989 The time domain facilities of a network analyzer, combined with the tools of network synthesis, were recently used for experimental modeling of discontinuities in an S-parameter measurement set, so as to allow the instrument calibration directly to the ...
Beccari, C. +2 more
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