Results 31 to 40 of about 23,650 (265)
Single-Event Transients in an IEEE 802.15.4 RF Receiver for Wireless Sensor Networks
Sensors, 2020 This paper presents a procedure to analyse the effects of radiation in an IEEE 802.15.4 RF receiver for wireless sensor networks (WSNs). Specifically, single-event transients (SETs) represent one of the greatest threats to the adequate performance of ...
Sergio Mateos-Angulo +4 more
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A 75–305-GHz Power Amplifier MMIC With 10–14.9-dBm Pout in a 35-nm InGaAs mHEMT Technology
IEEE Microwave and Wireless Components Letters, 2021 The demonstration of a 75–305-GHz power amplifier (PA) monolithic microwave integrated circuit (MMIC) is presented in this letter. The PA is based on an eight-cell traveling-wave unit amplifier (UA).
F. Thome, A. Leuther
semanticscholar +1 more source
IEEE Microwave and Wireless Components Letters, 2021 This letter presents a $C$ -band high-efficiency fully integrated high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) in 0.25 $\mu \text{m}$ gallium nitride (GaN) high electron mobility transistor (HEMT) technology.
Heng Xie +4 more
semanticscholar +1 more source
Millimeter-Wave MMICs and Applications [PDF]
, 2003 As device technology improves, interest in the millimeter-wave band grows. Wireless communication systems migrate to higher frequencies, millimeter-wave radars and passive sensors find new solid-state implementations that promise improved performance ...
Morgan, Matthew Alexander
core +1 more source
Robust Ku-Band GaN Low-Noise Amplifier MMIC [PDF]
Journal of Electromagnetic Engineering and ScienceThis paper employs the 0.2 μm ETRI GaN HEMT process on SiC to develop a Ku-band GaN low-noise amplifier monolithic microwave integrated circuit (MMIC) characterized by high-input power robustness for radar transceiver modules.
Seong-Hee Han, Dong-Wook Kim
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W‐Band MMIC chipset in 0.1‐μm mHEMT technology
ETRI Journal, 2020 We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology.
Jong‐Min Lee +11 more
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DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications [PDF]
, 2009 A broadband low-loss, ultra-low-power consumption transmit/ receive switch using high-performance 50 nm gate-length metamorphic high electron mobility transistors (MHEMTs) is presented.
Hwang, C.J. +10 more
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VHF Balanced Amplifier with Lossless Feedbacks
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 Today’s practice of developing VHF radio systems paths widely uses MMIC as low-noise amplifiers. This approach is acceptable for radio systems operating in a relatively quiet electromagnetic environment.
I. Y. Malevich, P. V. Zayats
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A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology
Applied Sciences, 2020 This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs).
Dalal Fadil +10 more
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Electronic calibrator MMIC with frequency range up to 50 GHz for vector network analyzers in GaAs pHEMT technology [PDF]
ITM Web of Conferences, 2019 This paper presents design, simulation and measurements results of electronic calibrator with frequency range up to 50 GHz in GaAs pHEMT technology. MMIC was fabricated by using in-house 0,5 um pHEMT process.
Danilov Daniil +3 more
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