A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology
Applied Sciences, 2020 This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs).
Dalal Fadil +10 more
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VHF Balanced Amplifier with Lossless Feedbacks
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 Today’s practice of developing VHF radio systems paths widely uses MMIC as low-noise amplifiers. This approach is acceptable for radio systems operating in a relatively quiet electromagnetic environment.
I. Y. Malevich, P. V. Zayats
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3D coplanar waveguide structures on GaAs/Si substrates for MMIC applications [PDF]
, 2001 3D coplanar waveguide structures for MMIC applications on both Silicon and Gallium Arsenide substrates are proposed. Their performances are investigated with electromagnetic simulations and their results are compared in order to find the best possible ...
Budimir, D. +3 more
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Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices
AIP Advances, 2017 This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT) operation.
Chandan Sharma +5 more
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Electronic calibrator MMIC with frequency range up to 50 GHz for vector network analyzers in GaAs pHEMT technology [PDF]
ITM Web of Conferences, 2019 This paper presents design, simulation and measurements results of electronic calibrator with frequency range up to 50 GHz in GaAs pHEMT technology. MMIC was fabricated by using in-house 0,5 um pHEMT process.
Danilov Daniil +3 more
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Sensors, 2022 This paper presents the coupling effects analysis and suppression of a highly integrated receiver front-end MMIC for a passive millimeter-wave imager system.
Xi Chen +4 more
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Compact Asymmetrical Quasi-MMIC Doherty Power Amplifier [PDF]
Journal of Electromagnetic Engineering and Science, 2023 This paper presents a compact asymmetrical Doherty power amplifier (PA) based on a quasi-MMIC configuration for 5G sub-6 GHz applications. The proposed Doherty PA is composed of commercial GaN HEMTs and several passive components implemented on a silicon
Hong-Sun Yoon +4 more
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An Analytical Scalable Lumped-Element Model for GaN on Si Inductors
IEEE Access, 2020 In this paper, a wide-band distributed model that can approximate the behaviour of square and octagonal inductors, both with and without tapering, is presented.
Mario San Miguel Montesdeoca +5 more
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Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors
AIP Advances, 2019 This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky ...
Ajay Kumar Visvkarma +6 more
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Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise Figure [PDF]
Journal of Electromagnetic Engineering and ScienceIn this work, an X-band gallium nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with a switched impedance network for improved noise performance is designed and fabricated using a 0.25 μm GaN WIN-semiconductor ...
Byeong-Uk Lee
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