Electronic calibrator MMIC with frequency range up to 50 GHz for vector network analyzers in GaAs pHEMT technology [PDF]
ITM Web of Conferences, 2019 This paper presents design, simulation and measurements results of electronic calibrator with frequency range up to 50 GHz in GaAs pHEMT technology. MMIC was fabricated by using in-house 0,5 um pHEMT process.
Danilov Daniil +3 more
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Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices
AIP Advances, 2017 This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT) operation.
Chandan Sharma +5 more
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Sensors, 2022 This paper presents the coupling effects analysis and suppression of a highly integrated receiver front-end MMIC for a passive millimeter-wave imager system.
Xi Chen +4 more
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Algorithm for automated visual inspection of MMIC using a classifier based on neural networks [PDF]
ITM Web of Conferences, 2019 We present the algorithm for automated visual inspection of microwave monolithic integrated circuits (MMIC) using computer vision and artificial neural networks.
Shiryaev Boris +3 more
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An Analytical Scalable Lumped-Element Model for GaN on Si Inductors
IEEE Access, 2020 In this paper, a wide-band distributed model that can approximate the behaviour of square and octagonal inductors, both with and without tapering, is presented.
Mario San Miguel Montesdeoca +5 more
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Compact Asymmetrical Quasi-MMIC Doherty Power Amplifier [PDF]
Journal of Electromagnetic Engineering and Science, 2023 This paper presents a compact asymmetrical Doherty power amplifier (PA) based on a quasi-MMIC configuration for 5G sub-6 GHz applications. The proposed Doherty PA is composed of commercial GaN HEMTs and several passive components implemented on a silicon
Hong-Sun Yoon +4 more
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Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors
AIP Advances, 2019 This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky ...
Ajay Kumar Visvkarma +6 more
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Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise Figure [PDF]
Journal of Electromagnetic Engineering and ScienceIn this work, an X-band gallium nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with a switched impedance network for improved noise performance is designed and fabricated using a 0.25 μm GaN WIN-semiconductor ...
Byeong-Uk Lee
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Research progress on terahertz integrated power amplifier
Dianzi Jishu Yingyong, 2019 In this paper, the current development status and bottleneck problems of terahertz science and technology are presented. The emphasis of discussion is on research progress of the core component in terahertz circuits, monolithic integrated power amplifier.
Han Jiangan, Cheng Xu
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Ultra-Wideband Asymmetric Impedance Transformer Design for High-Power Amplifier MMICs [PDF]
Journal of Electromagnetic Engineering and ScienceIn this study, an asymmetric impedance transformer is proposed for broadband high-power amplifier (HPA) monolithic microwave-integrated circuits (MMICs).
Jihoon Kim
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