Results 41 to 50 of about 23,650 (265)

3D coplanar waveguide structures on GaAs/Si substrates for MMIC applications [PDF]

, 2001
3D coplanar waveguide structures for MMIC applications on both Silicon and Gallium Arsenide substrates are proposed. Their performances are investigated with electromagnetic simulations and their results are compared in order to find the best possible ...
Budimir, D., D. Budimir, L. Lalehparvar, Lalehparvar, L.   +3 more
core   +1 more source

Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices

AIP Advances, 2017
This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT) operation.
Chandan Sharma, Robert Laishram, Amit, Dipendra Singh Rawal, Seema Vinayak, Rajendra Singh   +5 more
doaj   +1 more source

Coupling Effects Analysis and Suppression in a Highly Integrated Ka-Band Receiver Front-End MMIC for a Passive Millimeter-Wave Imager System

Sensors, 2022
This paper presents the coupling effects analysis and suppression of a highly integrated receiver front-end MMIC for a passive millimeter-wave imager system.
Xi Chen, Anyong Hu, Jianhao Gong, Amjad Altaf, Jungang Miao   +4 more
doaj   +1 more source

Algorithm for automated visual inspection of MMIC using a classifier based on neural networks [PDF]

ITM Web of Conferences, 2019
We present the algorithm for automated visual inspection of microwave monolithic integrated circuits (MMIC) using computer vision and artificial neural networks.
Shiryaev Boris, Bezruk Aleksey, Argunov Dmitry, Yushchenko Aleksey   +3 more
doaj   +1 more source

Compact Asymmetrical Quasi-MMIC Doherty Power Amplifier [PDF]

Journal of Electromagnetic Engineering and Science, 2023
This paper presents a compact asymmetrical Doherty power amplifier (PA) based on a quasi-MMIC configuration for 5G sub-6 GHz applications. The proposed Doherty PA is composed of commercial GaN HEMTs and several passive components implemented on a silicon
Hong-Sun Yoon, Min-Soo Park, Jong-Min Yook, Dongsu Kim, Youngcheol Park   +4 more
doaj   +1 more source

An Analytical Scalable Lumped-Element Model for GaN on Si Inductors

IEEE Access, 2020
In this paper, a wide-band distributed model that can approximate the behaviour of square and octagonal inductors, both with and without tapering, is presented.
Mario San Miguel Montesdeoca, Sergio Mateos Angulo, Daniel Mayor Duarte, Javier Del Pino, Javier A. Garcia Y Garcia, Sunil L. Khemchandani   +5 more
doaj   +1 more source

Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP Advances, 2019
This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky ...
Ajay Kumar Visvkarma, Chandan Sharma, Robert Laishram, Sonalee Kapoor, D. S. Rawal, Seema Vinayak, Manoj Saxena   +6 more
doaj   +1 more source

Design and characterization of SiC varactor-based phase shifters [PDF]

, 2012
Design and realization of two continuously tunable phase shifters for 1.4 GHz band is presented. Both circuits are based on SiC varactors, conceived to enable high-voltage, high-power operation, and suitable for application in the transmitter chain of ...
Andersson, Christer, Fager, Christian, Andersson, C.M., V. Camarchia, Fager, C., R. Quaglia, D. Kuylenstierna, Fagery, C., Camarchia, Victor,, Kuylenstierna, Dan,, Kuylenstierna, Dan, Pirola, Marco,, Pirola, Marco, Kuylenstierna, D., Andersson, Christer,, C. Fager, Fagery, C.,, Quaglia, Roberto, Camarchia, Vittorio, Quaglia, Roberto,, M. Pirola, C. M. Andersson, Camarchia, Victor   +22 more
core   +1 more source

Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise Figure [PDF]

Journal of Electromagnetic Engineering and Science
In this work, an X-band gallium nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with a switched impedance network for improved noise performance is designed and fabricated using a 0.25 μm GaN WIN-semiconductor ...
Byeong-Uk Lee
doaj   +1 more source

Research progress on terahertz integrated power amplifier

Dianzi Jishu Yingyong, 2019
In this paper, the current development status and bottleneck problems of terahertz science and technology are presented. The emphasis of discussion is on research progress of the core component in terahertz circuits, monolithic integrated power amplifier.
Han Jiangan, Cheng Xu
doaj   +1 more source