Results 41 to 50 of about 1,181 (174)
This paper presents a fully‐integrated frequency‐modulated continuous‐wave (FMCW) transceiver chip operating from 55 to 66 GHz, fabricated in a 65 nm silicon‐on‐insulator (SOI) CMOS process. The chip incorporates a wide‐tuning‐range voltage‐controlled oscillator (VCO) with four digitally selectable states, a driver amplifier, a power amplifier, a low ...
Yulong Xu +4 more
wiley +1 more source
A 0.85–1.25 GHz On‐Chip Tunable Bandpass Filter Using Cascaded Parametric Mixing in GaAs MMIC
This paper demonstrates the first fully integrated GaAs MMIC implementation of a parametric frequency‐translated bandpass filter using cascaded up‐ and down‐conversion stages around a fixed idler resonance. The proposed architecture enables continuous tuning from 0.85 to 1.25 GHz with near‐unity gain, <3 dB insertion loss and >30 dB out‐of‐band ...
Sean C. Chen +3 more
wiley +1 more source
ABSTRACT Complex stratigraphic arrangements may be generated through lateral facies transitions from the strata of aeolian depositional systems into bordering peritidal deposits. In such scenarios, sedimentary architectural complexity and associated facies heterogeneities are governed by the interplay between autogenic processes inherent to tidal ...
Victor J. P. Hême de Lacotte +5 more
wiley +1 more source
Multiband Crescent Array Antennas for THz Applications
The design and analysis of multiband crescent array antennas for THz applications are proposed in this article. Beginning with a 1 × 2 array, then on to a 1 × 4 array, and finally to a 2 × 4 crescent patch array, the analysis is carried out from a single‐element THz crescent patch.
Harini V. +5 more
wiley +1 more source
On‐chip GaAs‐based dual‐band bandpass filters/isolators (DBPFIs)
MMIC co‐designed RF components exhibiting the collocated RF signal processing actions of a dual‐band bandpass filter and an RF isolator (DBPFI) are presented. They are based on in‐parallel cascaded bandpass filters/isolators that operate at two different
Andrea Ashley, Dimitra Psychogiou
doaj +1 more source
This paper presents the design and implementation of a high‐efficiency two‐way Doherty power amplifier (DPA) for sub‐6 GHz 5G New Radio (NR) applications, specifically targeting the n78 band (3.3–3.8 GHz). The proposed gallium nitride (GaN)‐based DPA delivers a peak output power of 42.5 dBm, a gain of 13.3 dB, and a maximum power‐added efficiency (PAE)
Tugba Haykir Ergin +2 more
wiley +1 more source
Impact of Parasitic Conductive Interfaces on the DC and RF Performance of GaN‐on‐GaN HEMTs
GaN‐on‐GaN HEMTs suffering from a parasitic conductive interface show a power added efficiency drop from an expected 50 % to 15 %. The interface forms on GaN wafers prior to epitaxy due to Si contamination to absorb RF power, introduce propagation loss and loading effects, reduce gain by 50 %, and fmax and Pout by 40 % compared to GaN‐on‐SiC HEMTs ...
Amer Bassal +6 more
wiley +1 more source
Four-channel GaAs multifunction chips with bottom RF interface for Ka-band SATCOM antennas
Receiver and transmitter monolithic microwave integrated circuit (MMIC) multifunction chips (MFCs) for active phased-array antennas for Ka-band satellite communication (SATCOM) terminals have been designed and fabricated using a 0.15-μm GaAs ...
Jin-Cheol Jeong +2 more
doaj +1 more source
High Power, Thermally Efficient, X-band 3D T/R Module With Calibration Capability for Space Radar
Earth observation from space radar is based on the active electronically steerable antenna (AESA) whose performances count on reliable and powerful transmit/receive modules (TRM).
Antonio Fina +2 more
doaj +1 more source
ABSTRACT This research examines the physical and microstructural properties of New Zealand faba beans (Vicia faba), with a focus on their influence on swelling, hydration, and cooking characteristics. Four native varieties (Early Long Pod, Evergreen, Coles Dwarf, and Janet) were studied.
Navneet +3 more
wiley +1 more source

