Results 171 to 180 of about 75,173 (277)
Indium Gallium Arsenic Phosphide-Based Optoelectronics Grown By Gas Source Molecular Beam Epitaxy
, 2017 G.-J. Shiau
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Epitaxy and Phase Stability of 2D Hexagonal Gallium Telluride on Silicon
physica status solidi (RRL) – Rapid Research Letters, EarlyView.Two‐stage amorphization as a function of annealing temperature of continuous, strain‐free, high‐crystalline‐quality 2D hexagonal gallium telluride on silicon obtained by van der Waals epitaxy. Controlling crystal quality during epitaxial growth is essential for the advancement of novel materials with industrial relevance.
Andrea Pianetti +6 more
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Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111)A Substrates by Molecular Beam Epitaxy [PDF]
Qihua Zhang +4 more
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In vacancies in InN grown by plasma-assisted molecular beam epitaxy [PDF]
, 2010 Floris Reurings +4 more
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Rare Metals, EarlyView.ABSTRACT Silica nanosheets (SiO2 NSs) hold great promise for advanced thermal protection applications because of their exceptional thermal and chemical stability. However, their development has been hindered by challenges in scalable synthesis and structural integration for specialized applications.
Qun‐Yao Yuan +3 more
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Step Dynamics during Molecular Beam Epitaxy on Si(100) and GaAs(100) Surfaces.
, 1999 T. Kawamura, Akira Ishii
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Rare Metals, EarlyView.ABSTRACT The transformative potential of gallium nitride high electron mobility transistors (GaN HEMTs) in advancing carbon‐neutral power systems remains bottlenecked by contact resistance (Rc) at the metal–semiconductor (M‐S) interface, a critical determinant of switching losses and frequency response.
Ji‐Zhou Zhang +8 more
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Growth of CrTe thin films by molecular-beam epitaxy
, 2005 M. G. Sreenivasan +5 more
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Small, EarlyView.Cross‐sectional electron microscopy reveals that antimonene hexagons exhibited inner defects and protective organic functionalization against oxidation. Temperature and power‐dependent Raman spectroscopy on varying thicknesses of FLA hexagons show that thinner flakes (<20 nm) exhibited a blueshift and intensity decrease, contrasting with the redshift ...
Marta Alcaraz +6 more
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A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
, 2008 Sergio Fernández‐Garrido +2 more
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