Results 191 to 200 of about 75,173 (277)
The miscut substrate strategy offers a novel means to engineer aluminum surface roughness, grain architecture, crystallinity, and both normal and superconducting transport properties toward their clean limits by precisely tuning the miscut angle without altering growth conditions.
Thi‐Hien Do +13 more
wiley +1 more source
On the doping of Silicon nanowires grown by molecular beam epitaxy
Pratyush Das Kanungo
openalex +1 more source
Effect of using a high-purity Fe source on the transport properties of p-type β-FeSi2 grown by molecular-beam epitaxy [PDF]
Mitsushi Suzuno +5 more
openalex +1 more source
Universal Fabrication of Graphene/Perovskite Oxide Hybrid Heterostructures
This study presents a universal, catalyst‐free method for the direct growth of monolayer graphene on perovskite oxides without the need for transfer. The process yielded uniform graphene formation across different insulating substrates under identical conditions, revealing a substrate‐independent growth mechanism.
Yeongju Choi +14 more
wiley +1 more source
Spontaneous and selective growth of GaN nanowires on Si (111) substrates by molecular beam epitaxy
Σάββας Ευτύχης
openalex +1 more source
Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy [PDF]
M. A. Sánchez-Garcı́a +8 more
openalex +1 more source
Exploring oxide quasicrystals in internal space
The internal space expansion with variable system size is investigated for three different oxide quasicrystal systems. Patches of 7800, 4800 and 3600 vertices are examined in Ba–Ti–O/Pt(111), Eu–Ti–O/Pd(111) and Sr–Ti–O/Pd(111), respectively. This internal space inspection provides unique structural information for quasicrystalline systems, which goes ...
Sebastian Schenk +3 more
wiley +1 more source
Molecular-beam epitaxy of 7-8 μm range quantum-cascade laser heterostructures
A. V. Babichev +10 more
openalex +1 more source
Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley +1 more source
Epitaxial Lift‐Off Process for Triple‐Junction Solar Cells Using Internal Push–Pull Stressors
Epitaxial lift‐off of multijunction solar cells is achieved using internal push‐pull stressors to enable thin‐film release. An oxide sidewall protection layer ensures selective etching of the sacrificial layer while preventing damage to Al and P containing active layers.
Prabudeva Ramu +9 more
wiley +1 more source

