Results 211 to 220 of about 29,757 (249)
Some of the next articles are maybe not open access.
Growth of microstructures by molecular beam epitaxy
IEEE Journal of Quantum Electronics, 1986Molecular beam epitaxy is the most widely currently used technique for the growth of semiconductor microstructures. Multilayers with thicknesses and smoothness controlled near the monolayer level are being produced, including, recently, quantum wells with special shapes, quantum wells to which electric fields may be applied, new structures with ...
openaire +1 more source
Selective epitaxial growth by molecular beam epitaxy
Semiconductor Science and Technology, 1993Selective epitaxial growth by molecular beam epitaxy (MBE) is realized at rather high substrate temperatures: 700 degrees for GaAs and 550 degrees C for InAs with a growth rate of 0.7 mu m h-1. Selectivity depends significantly on growth rate, As pressure and substrate temperature. Growth kinetic studies are carried out.
openaire +1 more source
Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
Advanced Materials, 2010Jeongho Park +2 more
exaly
Large Area Synthesis of 1D‐MoSe2 Using Molecular Beam Epitaxy
Advanced Materials, 2017Sock Mui Poh +2 more
exaly