Results 231 to 240 of about 82,642 (308)

X-ray magnetic circular dichroism for Co x Fe4− x N (x = 0 3 4) films grown by molecular beam epitaxy

, 2014
Ito Keita, Sanai Tatsunori, Yasutomi Yoko, Zhu Siyuan, TOKO Kaoru, Takeda Yukiharu, Saitoh Yuji, Kimura Akio, SUEMASU Takashi   +8 more
openalex   +1 more source

Erratum to : Studies of Au-GaAs (001) Interfaces Prepared by Molecular Beam Epitaxy

, 1986

openalex   +2 more sources

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy. [PDF]

Materials (Basel)
Feng ZC, Liu J, Xie D, Nafisa MT, Zhang C, Wan L, Jiang B, Lin HH, Qiu ZR, Lu W, Klein B, Ferguson IT, Liu S.   +12 more
europepmc   +1 more source

Interrelation between Strain Relaxation and In_xAl_1-xAs Compositional Graded Step Buffer Layers on GaAs Substrate Grown by Molecular Beam Epitaxy

, 2007
Sook Hyun Hwang, Yu Mi Park, Hoon Ha Jeon, Kyung Seok Noh, Jae Kyu Kim, Joon He Moon, Han Jung Song, J. Y. Leem, Min Hyon Jeon   +8 more
openalex   +1 more source

Exploring the effects of molecular beam epitaxy growth characteristics on the temperature performance of state-of-the-art terahertz quantum cascade lasers. [PDF]

Sci Rep
Lander Gower N, Levy S, Piperno S, Addamane SJ, Albo A.   +4 more
europepmc   +1 more source

Fabrication and Characterization of Optoelectronics Devices Based on III-V Materials for Infrared Applications by Molecular Beam Epitaxy

, 2012
A. Torfi
openalex   +1 more source

Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy. [PDF]

Cryst Growth Des
Kafi N, Kang S, Golz C, Rodrigues-Weisensee A, Persichetti L, Ryzhak D, Capellini G, Spirito D, Schmidbauer M, Kwasniewski A, Netzel C, Skibitzki O, Hatami F.   +12 more
europepmc   +1 more source

Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy. [PDF]

Sci Rep, 2020
Liu CW, Dai JJ, Wu SK, Diep NQ, Huynh SH, Mai TT, Wen HC, Yuan CT, Chou WC, Shen JL, Luc HH.   +10 more
europepmc   +1 more source

ELIMINATION OF TWINNING IN MOLECULAR BEAM EPITAXY OF GaAs/Si and GaAs/INSULATOR

, 1988
C. Fontaine, J. Castagné, E. Bedel, A. Muñoz-Yagüe   +3 more
openalex   +2 more sources

High-Quality Single Crystalline Sc_0.37Al_0.63N Thin Films Enabled by Precise Tuning of III/N Atomic Flux Ratio during Molecular Beam Epitaxy. [PDF]

Nanomaterials (Basel)
Yin Y, Liu R, Zhao H, Fan S, Zhang J, Li S, Sun Q, Yang H.   +7 more
europepmc   +1 more source