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Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1988D E Aspnes, A A Studna, L T Florez
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Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy
Applied Physics Letters, 1991J M Depuydt, Qiu J, Depuydt J M
exaly
Semiconductor molecular‐beam epitaxy at low temperatures
Journal of Applied Physics, 1995D J Eaglesham, Eaglesham D J
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Photoluminescence excitation measurements on GaAs:Er grown by molecular‐beam epitaxy
Journal of Applied Physics, 1987H Ennen, H D Müller, Ennen H
exaly
Kinetic roughening in molecular-beam epitaxy
Physical Review Letters, 1991, Tang, , Nattermann
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