Results 231 to 240 of about 3,923,319 (288)

Exploring the Landscape of MgO Polymorphs: Stability and the Electronic Band Gap of Promising Candidates

Zeitschrift für anorganische und allgemeine Chemie, Volume 652, Issue 14, 23 September 2026.
In this study, we have investigated possible predicted polymorphs of magnesium oxide (MgO) with respect to their thermodynamic and kinetic stability, as well as their electronic properties, focusing on the possibility of tuning the band gap of the material.
D. Zagorac, J. Zagorac, D. Fischer, T. Škundrić, J. C. Schön   +4 more
wiley   +1 more source

The growth of Ge and direct bandgap Ge_1-xSn_x on GaAs (001) by molecular beam epitaxy. [PDF]

RSC Adv
Gunder C, Maia de Oliveira F, Wangila E, Stanchu H, Zamani-Alavijeh M, Ojo S, Acharya S, Said A, Li C, Mazur YI, Yu SQ, Salamo GJ.   +11 more
europepmc   +1 more source

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi₂Te₄ thin films. [PDF]

Natl Sci Rev
Bai Y, Li Y, Luan J, Liu R, Song W, Chen Y, Ji PF, Zhang Q, Meng F, Tong B, Li L, Jiang Y, Gao Z, Gu L, Zhang J, Wang Y, Xue QK, He K, Feng Y, Feng X.   +19 more
europepmc   +1 more source

Molecular Beam Epitaxy of β-(In_xGa_1-x)₂O₃ on β-Ga₂O₃ (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement. [PDF]

ACS Appl Mater Interfaces
Mazzolini P, Wouters C, Albrecht M, Falkenstein A, Martin M, Vogt P, Bierwagen O.   +6 more
europepmc   +1 more source

New semiconductor alloy UbPBi grown by molecular beam epitaxy

, 2013
Wang, Shu Min,, Wang, K, Kang, C.Z, Zhou, H.F, Gu, Y, Gong, Q   +5 more
core  

Growth and Characterization of GaInNAs Quantum Wells Using Nitrogen Irradiation in Molecular Beam Epitaxy

, 2008
Zhao Ternehäll, Huan,, Wang, Shu Min,, Larsson, Anders,, Sadeghi, Mahdad,   +3 more
core  

1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)

, 2008
Zhao Ternehäll, Huan,, Wang, Shu Min,, Gustavsson, Johan,, Adolfsson, Göran,, Larsson, Anders,, Wei, Yongqiang,, Zhao, Qing Xiang,, Sadeghi, Mahdad,   +7 more
core  

Molecular beam epitaxy 1994 proceedings of the eighth International Conference on Molecular Beam Epitaxy Toyanaka, Osaka, Japan, 29 August - 2 September 1994 ; MBE VIII

International Conference on Molecular Beam Epitaxy 1994 Toyonaka, Hiyamizu, S.   +1 more
core  

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Molecular Beam Epitaxy

Journal of the Society of Mechanical Engineers, 1989
A tutorial review of molecular beam epitaxial (MBE) growth of elemental, compound and alloy semiconductor films is presented. MBE is carried out on a heated substrate under ultra-high-vacuum (UHV) conditions (total pressure >
Hideaki KAMOHARA, Kazue TAKAHASHI
  +5 more sources

Molecular beam epitaxy: An overview

2011
Molecular beam epitaxy (MBE) is an epitaxial technology suited for the preparation of advanced structures with composition and doping profiles controlled on a nanometer scale. The MBE growth mechanisms of both lowly (
P Frigeri, L Seravalli, G Trevisi, S Franchi   +3 more
openaire   +2 more sources