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GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1984J C Bean, I K Robinson, Bean J C
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370 °C clean for Si molecular beam epitaxy using a HF dip
Applied Physics Letters, 1991D J Eaglesham +2 more
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InAs self‐assembled quantum dots on InP by molecular beam epitaxy
Applied Physics Letters, 1996S Fafard, Z R Wasilewski, J Mccaffrey
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Gas source silicon molecular beam epitaxy using silane
Applied Physics Letters, 1987Hiroyuki Hirayama +2 more
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Epitaxial Growth of CdTe on Si by Molecular Beam Epitaxy
Physicalia Magazine, 2008Samain, Louise +4 more
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