Results 251 to 260 of about 82,642 (308)

Dataset: Growth of tetragonal PtO by molecular-beam epitaxy and its integration into beta-Ga2O3 Schottky diodes

Hensling, Felix, Parzyck, Christopher, Cromer, Bennett, Mamun, Md Abdullah Al, Suyolcu, Y. Eren, Kalaydjian, Levon, Subedi, Indra, Park, Jisung, Azizie, Kathy, Song, Qi, van Aken, Peter A., Podraza, Nikolas, Cho, Kyeongjae, Jena, Debdeep, Xing, Huili, Shen, Kyle, Schlom, Darrell, Vogt, Patrick   +17 more
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Influence of beta-FeSi2 particle size and Si growth rate on 1.5 µm photoluminescence from Si/beta-FeSi2-particles/Si structures grown by molecular-beam epitaxy

, 2004
Ozawa Y., Ohtsuka T., Li Cheng, SUEMASU Takashi, Hasegawa F.   +4 more
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Molecular Beam Epitaxy of β-(In_xGa_1-x)₂O₃ on β-Ga₂O₃ (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement. [PDF]

ACS Appl Mater Interfaces
Mazzolini P, Wouters C, Albrecht M, Falkenstein A, Martin M, Vogt P, Bierwagen O.   +6 more
europepmc   +1 more source

Initial Growth Process of Cu Thin Films on bcc-FeCo/MgO(100) via Molecular Beam Epitaxy

Shingo Takezawa, Michele Riva, Florian Dörr, Micheal Schmid, Taisuke Sasaki, Takanobu Hiroto, Masato Kotsugi, Koichiro Yaji, Yuya Sakuraba, Naoka Nagamura   +9 more
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Molecular Beam Epitaxy of ZnSe on (110) Substrates ((110)基板上へのZnSeのMBE成長)

, 1998
光旭 高
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Growth and characterization of group-III impurity-doped semiconducting BaSi2 films grown by molecular beam epitaxy

, 2007
Kobayashi M., Morita K., SUEMASU Takashi
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Molecular-Beam Epitaxy

AT&T Technical Journal, 1980
Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
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Molecular Beam Epitaxy

Journal of the Society of Mechanical Engineers, 1989
A tutorial review of molecular beam epitaxial (MBE) growth of elemental, compound and alloy semiconductor films is presented. MBE is carried out on a heated substrate under ultra-high-vacuum (UHV) conditions (total pressure >
Hideaki KAMOHARA, Kazue TAKAHASHI
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Molecular Beam Epitaxy

1991
Molecular Beam Epitaxy (MBE) has become a well-established technique for the growth of ultra-thin films and devices with precise control of thickness, doping concentration and composition. The importance of MBE, basic growth processes, different forms of MBE and some of its recent applications are described in this review article.
P. R. Vaya, K. Ponnuraju
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Molecular beam epitaxy: An overview

2011
Molecular beam epitaxy (MBE) is an epitaxial technology suited for the preparation of advanced structures with composition and doping profiles controlled on a nanometer scale. The MBE growth mechanisms of both lowly (
P Frigeri, L Seravalli, G Trevisi, S Franchi   +3 more
openaire   +2 more sources