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Silicon Molecular Beam Epitaxy
Extended Abstracts of the 1983 International Conference on Solid State Devices and Materials, 1983Many works are now conducted in the worldwide scale on silicon molecular beam epitaxy (Si MBE) including homoepitaxy, doping, heteroepitaxy such as silicon/insulator, silicon/other semiconductor, and silicon/metal (silicide), and poly-Si deposition. As for device applications, work is now moving from conventional discrete devices to integrated circuits
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Surface Science, 2002
Abstract Molecular beam epitaxy (MBE) is a process for growing thin, epitaxial films of a wide variety of materials, ranging from oxides to semiconductors to metals. It was first applied to the growth of compound semiconductors. That is still the most common usage, in large part because of the high technological value of such materials to the ...
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Abstract Molecular beam epitaxy (MBE) is a process for growing thin, epitaxial films of a wide variety of materials, ranging from oxides to semiconductors to metals. It was first applied to the growth of compound semiconductors. That is still the most common usage, in large part because of the high technological value of such materials to the ...
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New Instability in Molecular Beam Epitaxy
Physical Review Letters, 1995A new, step bunching instability in the growth of stepped surfaces by molecular beam epitaxy MBE is described. It is produced by an elastic mechanism, and is different from the instability discovered by Asaro and Tiller and by Grinfeld. Unlike the Asaro-Tiller-Grinfeld instability (which is expected to occur only under very low fluxes), the present ...
, Duport, , Nozières, , Villain
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SPIE Proceedings, 1989
The current high level of interest in the growth of InP/InGaAsP/InGaAs lattice matched to InP, has influenced many researchers to consider the use of gas sources in growth by MBE. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps.
M. J. McCollum +6 more
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The current high level of interest in the growth of InP/InGaAsP/InGaAs lattice matched to InP, has influenced many researchers to consider the use of gas sources in growth by MBE. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps.
M. J. McCollum +6 more
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Gas source molecular beam epitaxy
Conference on Lasers and Electro-Optics, 1985The replacement of the elemental sources of conventional MBE with simple compounds, first reported in 1980 [1], was initiated in order to bring the advantages of molecular beam epitaxy to the growth of GaxIn1−xAs1−yPy/InP heterostructures. These advantages center about precision in layer thickness and abruptness in doping and heterojunction interfaces.
M B Panish, H Temkin
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1988
Molecular beam epitaxy (MBE) is a sophisticated method of film growth capable of providing the device engineer with any desired structure. This flexibility has emerged from a thorough understanding of the fundamental factors controlling growth and dopant incorporation obtained using modulated molecular beam spectroscopy, reflection high energy electron
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Molecular beam epitaxy (MBE) is a sophisticated method of film growth capable of providing the device engineer with any desired structure. This flexibility has emerged from a thorough understanding of the fundamental factors controlling growth and dopant incorporation obtained using modulated molecular beam spectroscopy, reflection high energy electron
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SURFACE ROUGHNESS IN MOLECULAR BEAM EPITAXY
Stochastics and Dynamics, 2001This paper discusses the roughness of surfaces described by nonlinear stochastic partial differential equations on bounded domains. Roughness is an important characteristic for processes arising in molecular beam epitaxy, and is usually described by the mean interface width of the surface, i.e. the expected value of the squared Lebesgue norm.
Blömker, Dirk +2 more
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Atomic and Molecular Beams Control in Molecular Beam Epitaxy
Nano- i Mikrosistemnaya Tehnika, 2021Rapid development of molecular beam epitaxy (MBE) in recent decades has led to the emergence of a variety of technological installations, as well as electronic and optical diagnostics of growing layers, as well as atomic and molecular beams. Known methods for monitoring atomic and molecular beams in MBE installations-mass spectrometric and luminescent -
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Vacuum, 1981
This article reviews the major physico-chemical aspects of molecular beam epitaxy (MBE), especially as applied to the deposition of thin epitaxial films of 111-V compound and alloy semiconductors. The experimental requirements to achieve the necessary levels of control, purity and uniformity are described first to establish the basic features of the ...
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This article reviews the major physico-chemical aspects of molecular beam epitaxy (MBE), especially as applied to the deposition of thin epitaxial films of 111-V compound and alloy semiconductors. The experimental requirements to achieve the necessary levels of control, purity and uniformity are described first to establish the basic features of the ...
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Growth of microstructures by molecular beam epitaxy
IEEE Journal of Quantum Electronics, 1986Molecular beam epitaxy is the most widely currently used technique for the growth of semiconductor microstructures. Multilayers with thicknesses and smoothness controlled near the monolayer level are being produced, including, recently, quantum wells with special shapes, quantum wells to which electric fields may be applied, new structures with ...
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