Results 271 to 280 of about 3,923,319 (288)

Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs Available to Purchase

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1988
David E. Aspnes, L T Florez, A A Studna
exaly  

Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxy

Applied Physics Letters, 1991
M D Pashley, J M Gaines
exaly  

Molecular beam epitaxy

Microelectronics Reliability, 1974
openaire   +1 more source

Semiconductor molecular‐beam epitaxy at low temperatures

Journal of Applied Physics, 1995
D J Eaglesham
exaly  

Molecular Beam Epitaxy-Grown SnSe in the Rock-Salt Structure: An Artificial Topological Crystalline Insulator Material

Advanced Materials, 2015
Ke He, Lili Wang, Qinghua Zhang
exaly  

370 °C clean for Si molecular beam epitaxy using a HF dip

Applied Physics Letters, 1991
D J Eaglesham, G S Higashi
exaly  

Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems

Critical Reviews in Solid State and Materials Sciences, 1996
David D. Nolte, J C P Chang, E S Harmon
exaly  

Kinetic roughening in molecular-beam epitaxy

Physical Review Letters, 1991
, Tang, , Nattermann
openaire   +2 more sources

GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1984
Ian K Robinson, A T Fiory, J C Bean
exaly  

Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °C

Applied Physics Letters, 1991
D R Dykaar, D J Eaglesham, L N Pfeiffer
exaly