Results 271 to 280 of about 82,642 (308)

Selective epitaxial growth by molecular beam epitaxy

Semiconductor Science and Technology, 1993
Selective epitaxial growth by molecular beam epitaxy (MBE) is realized at rather high substrate temperatures: 700 degrees for GaAs and 550 degrees C for InAs with a growth rate of 0.7 mu m h-1. Selectivity depends significantly on growth rate, As pressure and substrate temperature. Growth kinetic studies are carried out.
openaire   +1 more source

Molecular beam epitaxy

Progress in Solid State Chemistry, 1975
A.Y. Cho, J.R. Arthur
openaire   +2 more sources

Molecular Beam Epitaxy

1996
Marian A. Herman, Helmut Sitter
openaire   +1 more source

Molecular Beam Epitaxy

2022
openaire   +1 more source

Molecular beam epitaxy

Microelectronics Reliability, 1974
openaire   +1 more source

Molecular Beam Epitaxy

2015
John Orton, Tom Foxon
openaire   +1 more source

Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)

Advanced Materials, 2010
Jeongho Park, William C Mitchel, Kurt G Eyink   +2 more
exaly  

Large Area Synthesis of 1D‐MoSe2 Using Molecular Beam Epitaxy

Advanced Materials, 2017
Sock Mui Poh, Sherman J R Tan, Xiaoxu Zhao   +2 more
exaly  

Molecular Beam Epitaxy

2004
Marian A. Herman, Wolfgang Richter, Helmut Sitter   +2 more
openaire   +1 more source

Synthesis of Silicon Nanotubes on Porous Alumina Using Molecular Beam Epitaxy

Advanced Materials, 2003
S Y Jeong, S -H Choi
exaly