Results 191 to 200 of about 29,757 (249)

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi₂Te₄ thin films. [PDF]

Natl Sci Rev
Bai Y, Li Y, Luan J, Liu R, Song W, Chen Y, Ji PF, Zhang Q, Meng F, Tong B, Li L, Jiang Y, Gao Z, Gu L, Zhang J, Wang Y, Xue QK, He K, Feng Y, Feng X.   +19 more
europepmc   +1 more source

The growth of Ge and direct bandgap Ge_1-xSn_x on GaAs (001) by molecular beam epitaxy. [PDF]

RSC Adv
Gunder C, Maia de Oliveira F, Wangila E, Stanchu H, Zamani-Alavijeh M, Ojo S, Acharya S, Said A, Li C, Mazur YI, Yu SQ, Salamo GJ.   +11 more
europepmc   +1 more source

New semiconductor alloy UbPBi grown by molecular beam epitaxy

, 2013
Wang, Shu Min,, Wang, K, Kang, C.Z, Zhou, H.F, Gu, Y, Gong, Q   +5 more
core  

Molecular Beam Epitaxy of β-(In_xGa_1-x)₂O₃ on β-Ga₂O₃ (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement. [PDF]

ACS Appl Mater Interfaces
Mazzolini P, Wouters C, Albrecht M, Falkenstein A, Martin M, Vogt P, Bierwagen O.   +6 more
europepmc   +1 more source

1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)

, 2008
Zhao Ternehäll, Huan,, Wang, Shu Min,, Gustavsson, Johan,, Adolfsson, Göran,, Larsson, Anders,, Wei, Yongqiang,, Zhao, Qing Xiang,, Sadeghi, Mahdad,   +7 more
core  

Molecular beam epitaxy 1994 proceedings of the eighth International Conference on Molecular Beam Epitaxy Toyanaka, Osaka, Japan, 29 August - 2 September 1994 ; MBE VIII

International Conference on Molecular Beam Epitaxy 1994 Toyonaka, Hiyamizu, S.   +1 more
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Growth and Characterization of GaInNAs Quantum Wells Using Nitrogen Irradiation in Molecular Beam Epitaxy

, 2008
Zhao Ternehäll, Huan,, Wang, Shu Min,, Larsson, Anders,, Sadeghi, Mahdad,   +3 more
core  

Molecular-Beam Epitaxy

AT&T Technical Journal, 1980
Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
Pamplin, Brian R
core   +6 more sources

Molecular Beam Epitaxy

, 1991
Molecular Beam Epitaxy (MBE) has become a well-established technique for the growth of ultra-thin films and devices with precise control of thickness, doping concentration and composition. The importance of MBE, basic growth processes, different forms of MBE and some of its recent applications are described in this review article.
P. R. Vaya, K. Ponnuraju
core   +4 more sources

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Molecular Beam Epitaxy

Journal of the Society of Mechanical Engineers, 1989
A tutorial review of molecular beam epitaxial (MBE) growth of elemental, compound and alloy semiconductor films is presented. MBE is carried out on a heated substrate under ultra-high-vacuum (UHV) conditions (total pressure >
Hideaki KAMOHARA, Kazue TAKAHASHI
  +5 more sources