Results 201 to 210 of about 3,923,319 (288)

Shutter-Synchronized Molecular Beam Epitaxy for Wafer-Scale Homogeneous GaAs and Telecom Wavelength Quantum Emitter Growth. [PDF]

Nanomaterials (Basel)
Kersting E, Babin HG, Spitzer N, Yan JY, Liu F, Wieck AD, Ludwig A.   +6 more
europepmc   +1 more source

Optical Signature of Moiré Superlattices Formed by Twisted SrTiO3 Membranes

Advanced Functional Materials, Volume 36, Issue 81, 8 October 2026.
We discover optical signatures from bonded interfaces in twisted SrTiO3 moiré superlattices, including low‐frequency Raman vibrational modes and strong second‐harmonic generation, consistent with strong interlayer coupling inferred from cross‐sectional electron microscopy and ab initio calculations. ABSTRACT Moiré superlattices formed at the interfaces
T. A. M. Ragib Shahriar, Fumikazu Murakami, Xing He, Konnor Koons, Xinyan Li, Bumseop Kim, Shihan Qin, Varun Harbola, Jochen Mannhart, Yimo Han, Ruijuan Xu, Shengxi Huang, Andrew M. Rappe, Hanyu Zhu   +13 more
wiley   +1 more source

The role of SiO₂ buffer layer in the molecular beam epitaxy growth of CsPbBr₃ perovskite on Si(111). [PDF]

Sci Rep
De Padova P, Ottaviani C, Olivieri B, Ivanov YP, Divitini G, Di Carlo A.   +5 more
europepmc   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, Volume 36, Issue 80, 5 October 2026.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

The Use of External Fields (Magnetic, Electric, and Strain) in Molecular Beam Epitaxy-The Method and Application Examples. [PDF]

Molecules
Dziwoki A, Blyzniuk B, Freindl K, Madej E, Młyńczak E, Wilgocka-Ślęzak D, Korecki J, Spiridis N.   +7 more
europepmc   +1 more source

Disorder‐Broadened Topological Hall Phase and Anomalous Hall Scaling in FeGe

Advanced Functional Materials, Volume 36, Issue 79, 1 October 2026.
By systematically introducing defects into FeGe via ion‐beam modification, we demonstrate that disorder broadens the temperature regime over which the topological Hall effect ‐ a signature of skyrmions or other chiral textures — appears, while also increasing its magnitude.
Chaman Gupta, Chris Matsumura, Hongbin Yang, Sarah Edwards, Rebeca M. Gurrola, Jiun‐Haw Chu, Hanjong Paik, Yongqiang Wang, David A. Muller, Robert Streubel, Tzu‐Ming Lu, Serena Eley   +11 more
wiley   +1 more source

Growth of Hg_0.7Cd_0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy. [PDF]

Molecules
Ma S, Pan W, Sun X, Zhang Z, Gu R, Faraone L, Lei W.   +6 more
europepmc   +1 more source

Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3

Advanced Materials, Volume 38, Issue 57, 13 October 2026.
Through precise epitaxial engineering, the cubic and paraelectric KTaO3${\rm KTaO}_3$ is transformed into a robust ferroelectric. By leveraging lattice‐mismatched substrates to apply controlled epitaxial strain, a stable ferroelectric ground‐state is achieved with a transition temperature as high as 475 K, establishing KTaO3${\rm KTaO}_3$ as a highly ...
Tobias Schwaigert, Salva Salmani‐Rezaie, Sankalpa Hazra, Utkarsh Saha, Maya Ramesh, Aiden Ross, Betül Pamuk, Long‐Qing Chen, David A. Muller, Darrell G. Schlom, Venkatraman Gopalan, Kaveh Ahadi   +11 more
wiley   +1 more source

Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy. [PDF]

Nanomaterials (Basel)
Gunder C, Zamani-Alavijeh M, Wangila E, Maia de Oliveira F, Sheibani A, Kryvyi S, Attwood PC, Mazur YI, Yu SQ, Salamo GJ.   +9 more
europepmc   +1 more source

Molecular Beam Epitaxy

SHINKU, 1973
openaire   +2 more sources