Results 201 to 210 of about 82,642 (308)

Wafer‐Scale Self‐Limiting Epitaxy of Bernal‐Stacked Single‐Crystal Boron Nitride

open access: yesSmall, Volume 22, Issue 26, 8 May 2026.
Wafer‐scale, single‐crystal Bernal‐stacked boron nitride (bBN) bilayers are grown by flow‐modulated MOCVD, where monoatomic Ni step edges on Ni(111) deterministically direct AB stacking. As an ultrathin interlayer, bBN suppresses interfacial scattering and enables robust, nonvolatile polarization switching in MoS2 channels, offering a scalable platform
Jaewon Wang   +22 more
wiley   +1 more source

Homoepitaxial growth of isotopically enriched h<sup>10</sup>BN layers on h<sup>11</sup>BN crystals by high-temperature molecular beam epitaxy. [PDF]

open access: yesNPJ 2D Mater Appl
Bradford J   +12 more
europepmc   +1 more source

Hole Polaronic Confinement in (111) Yttria‐Stabilised Zirconia

open access: yesSmall, Volume 22, Issue 25, 4 May 2026.
Ultrathin epitaxial YSZ(111) films unexpectedly develop p‐type mixed conduction and amplified electromechanical coupling under oxidizing conditions. Combined transport measurements and first‐principles modeling reveal that nanoscale confinement and ordered dopant–vacancy complexes stabilize localized O 2p hole polarons at the surface. A canonical ionic
Milica Vasiljevic   +15 more
wiley   +1 more source

Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy. [PDF]

open access: yesNanomaterials (Basel)
Shtrom IV   +6 more
europepmc   +1 more source

Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy. [PDF]

open access: yesNanomaterials (Basel), 2022
Zhang X   +13 more
europepmc   +1 more source

Mechanism of Self-Assembled Cubic InGaN/GaN Quantum Well Formation in Metal-Modulated Molecular Beam Epitaxy. [PDF]

open access: yesCryst Growth Des
Zscherp MF   +9 more
europepmc   +1 more source

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