Results 201 to 210 of about 75,173 (277)

Synthesis and Electronic Structure of the Fractionally Occupied Double Perovskite EuTa2O6 with Ordered Europium Vacancies

Advanced Functional Materials, Volume 36, Issue 10, 2 February 2026.
Two‐dimensional electronic states are the foundation of modern semiconductor technology. Here, we report molecular‐beam epitaxy growth of fractional double perovskite, EuTa2O6. Reciprocal space mapping and transmission electron microscopy confirm a layered ordering of A‐site cations.
Tobias Schwaigert, Ali Barooni, Benjamin Gregory, Paul Malinowski, Anirudh Tenneti, Sonia Hasko, Brenan Palazzolo, Jeffrey W Hodgson, Brendan Faeth, Patrick M. Woodward, Kyle M. Shen, Andrej Singer, Maryam Ghazisaeidi, Salva Salmani‐Rezaie, Darrell G. Schlom, Kaveh Ahadi   +15 more
wiley   +1 more source

Growth and Scanning Tunneling Microscopy Studies of Magnetic Films on Semiconductors and Development of Molecular Beam Epitaxy/Pulsed Laser Deposition and Cryogenic Spin-Polarized Scanning Tunneling Microscopy System

, 2011
Wenzhi Lin
openalex   +1 more source

Interrelation between Strain Relaxation and In_xAl_1-xAs Compositional Graded Step Buffer Layers on GaAs Substrate Grown by Molecular Beam Epitaxy

, 2007
Sook Hyun Hwang, Yu Mi Park, Hoon Ha Jeon, Kyung Seok Noh, Jae Kyu Kim, Joon He Moon, Han Jung Song, J. Y. Leem, Min Hyon Jeon   +8 more
openalex   +1 more source

Emerging 2D Materials and Their Hybrid Nanostructures for Label‐Free Optical Biosensing: Recent Progress and Outlook

Advanced Functional Materials, Volume 36, Issue 11, 5 February 2026.
This review highlights recent advances in label‐free optical biosensors based on 2D materials and rationally designed mixed‐dimensional nanohybrids, emphasizing their synergistic effects and novel functionalities. It also discusses multifunctional sensing platforms and the integration of machine learning for intelligent data analysis.
Xinyi Li, Yonghao Fu, Yuehe Lin, Dan Du
wiley   +1 more source

Molecular Beam Epitaxy

SHINKU, 1973
openaire   +2 more sources

Emergent Magnetic Structures at the 2D Limit of the Altermagnet MnTe

Advanced Functional Materials, Volume 36, Issue 11, 5 February 2026.
Renewed interest in MnTe has emerged due to its intriguing altermagnetism, a newly identified form of magnetism distinct from conventional ferro‐, antiferro‐, or paramagnetism. By combining magnetic X‐ray absorption spectroscopy, scanning tunnelling microscopy, and first‐principles theory, this study reveals that thinning MnTe to the 2D limit ...
Marc G. Cuxart, Roberto Robles, Beatriz Muñiz Cano, Pierluigi Gargiani, Clara Rebanal, Iolanda Di Bernardo, Alireza Amiri, Fabián Calleja, Manuela Garnica, Miguel A. Valbuena, Amadeo L. Vázquez de Parga   +10 more
wiley   +1 more source

Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
SNOM imaging and spectroscopy on a mechanically cleaved facet is used to characterize the different layers of complex epitaxial heterostructures composed of a type II superlattice and highly doped semiconductors. Both the geometrical parameters of the stack and the optical properties of the individual layers and of the interfaces are retrieved, as well
Laure Tailpied, Clément Gureghian, Fréderic Fossard, Jean‐Sébastien Mérot, Jean‐Baptiste Rodriguez, Fernando Gonzalez‐Posada Flores, Grégory Vincent, Thierry Taliercio, Baptiste Fix   +8 more
wiley   +1 more source

Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu, Xiaoshi Qian, Dahong Qian, Paolo Samorì   +3 more
wiley   +1 more source

Fabrication and Characterization of Optoelectronics Devices Based on III-V Materials for Infrared Applications by Molecular Beam Epitaxy

, 2012
A. Torfi
openalex   +1 more source

Diameter Dependence of Light Absorption in GaAs Nanowires Evidenced by Photoluminescence Spectroscopy

Advanced Optical Materials, Volume 14, Issue 5, 2 February 2026.
Photoluminescence spectroscopy is introduced as a qualitative method to probe light absorption in highly phase‐pure GaAs nanowire arrays and single nanowires, for which direct absorption measurements are challenging. Using defect‐line saturation and the exciton‐to‐plasma transition as indicators for the density of photogenerated charge carriers, a ...
Francisca Marín, Ijaas Mohamed, Oliver Brandt, Lutz Geelhaar   +3 more
wiley   +1 more source