Results 221 to 230 of about 85,412 (269)

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

open access: yesAdvanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal   +2 more
wiley   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

open access: yesAdvanced Electronic Materials, EarlyView.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

Tunable Electronic and Optoelectronic Properties of MoS2 Through Molecular Coverage‐Controlled Polyoxometalate Doping

open access: yesAdvanced Electronic Materials, EarlyView.
Molecular charge transfer at the V12‐DyPc/MoS2 interface stabilizes trions, suppressing neutral A‐exciton emission and enabling controlled modulation of the A–‐trion population, bridging excitonic physics with polyoxometalate charge‐transport functionality.
Jean‐Pierre Glauber   +10 more
wiley   +1 more source

Layer-dependent Raman polarization anisotropy in MoS₂ films grown by 200 mm-scale atomic layer deposition. [PDF]

open access: yesSci Rep
Smiri B   +9 more
europepmc   +1 more source

Near-zero hysteresis van der Waals MnAl<sub>2</sub>S<sub>4</sub> field-effect transistors with low minimal threshold voltage degradation and high thermal stability. [PDF]

open access: yesCommun Mater
Sattari-Esfahlan SM   +9 more
europepmc   +1 more source

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