Results 141 to 150 of about 156,764 (197)

Structure of hexacarbonylbis(pentamethylcyclopentadienyl)dimolybdenum(Mo–Mo)

Acta Crystallographica Section C Crystal Structure Communications, 1988
[Mo 2 (C 5 Me 5 ) 2 (CO) 6 ] cristallise dans le systeme monoclinique avec le groupe d'espace P2 1 /n.
W. Clegg, N. A. Compton, R. J. Errington, N. C. Norman   +3 more
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Synthesis and structure of hexabenzyl-dimolybdenum (MoMo)

Polyhedron, 1986
Abstract The homoleptic benzyl Mo2(CH2Ph)6 has been obtained by reaction of either MoCl4(thf)2 or Mo2(OPri)6 with Mg(CH2Ph)2. The dark-red, sparingly soluble complex has been characterized by 1H and 13C NMR as well as by a solid-state structure analysis.
Sharon M. Beshouri, Ian P. Rothwell, Kirsten Folting, John C. Huffman, William E. Streib   +4 more
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Thermally stimulated ionic conduction in MOS (MoSiO2Si) structures

Journal of Electrostatics, 1977
Abstract Results on thin films of silicon dioxide made by a low temperature process (oxidation of silane SiH4) are presented. We used a MOS structure MoSiO2Si for our investigations. Both capacitance-voltage and thermostimulated current measurements were made. A high ionic contamination (Na+) of 8 × 10−2 has been found.
Manifacier, J.-C., Parot, P., Fillard, J.-P.   +2 more
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Hydrogen sensitive MOS structures

1975 International Electron Devices Meeting, 1975
It is shown that hydrogen in the ambient atmosphere changes the flatband voltage of palladium gate MOS-structures. The physical mechanisms behind this phenomenon are discussed. Experimental results on the detection of hydrogen in air, argon and nitrogen are given.
I. Lundstrom, M.S. Shivaraman, C. Svensson   +2 more
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Instabilities of MOS Structure

Japanese Journal of Applied Physics, 1967
The surface charge density of MOS structure is strongly affected by the bias and temperature (BT) treatment. Ordinary and “clean” MOS diodes are prepared by using the (100) and (111) planes. The results on the “clean” diodes during the BT treatment at high electric field of both polarities show the presence of an electrochemical reaction.
Yoshio Miura, Yasuo Matukura
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Complementary MOS-bipolar structure

IEEE Transactions on Electron Devices, 1968
Medium and large scale integrated arrays employing complementary MOS transistors, are capable of driving low capacitive loads only. An n-p-n bipolar transistor with an isolated collector is needed when an integrated circuit is required to drive large capacitive loads without deterioration in the maximum operating frequency.
H.C. Lin, R.R. Iyer, C.T. Ho
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Phonons in (001) Mo/W/Mo and W/Mo/W layer structures

Physica Scripta, 1995
We have calculated the frequencies and local mode densities for phonons in (001) Mo/W/Mo and W/Mo/W sandwiches by means of the surface Green function matching method. A force constant model including two-body and three-body interactions up to third neighbours, which gives a reasonably accurate description of the bulk dispersion relations, has been ...
L Fernández-Alvarez, V R Velasco
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Interfacial reaction in mos structures

Vacuum, 1976
The kinetics of the reduction of SiO2 in Au/SiO2/Si structures has been studied as a function of time, temperature, and annealing environment. Reduction of the oxide seems to be dependent on the presence of Au–Si eutectic as regions free of Au remained intact and samples of Au on bulk glass showed no reactions.
E. I. Alessandrini, D. R. Campbell, K. N. Tu   +2 more
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A MOS structure temperature characterization

Materials Science and Engineering: B, 1997
Abstract As is known, during the realization of semiconductor made components or devices, defects appear which lead to electronic trapped states. Their energies are all located in the forbidden band called the band gap. These states are called surface states and hinder the good functioning of such components or devices.
A. Bouzidi, A. Boudissa, Z. Benamara, M. Anani, H. Sehil, B. Akkal   +5 more
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Analysis of Gold-Doped MOS Structures

physica status solidi (a), 1985
A theoretical analysis of the charge state of gold atoms within the silicon surface depletion region which explains the experimental variation of the minimum capacitance in gold-doped MOS structures is presented. To explain the positive shift of the threshold voltage a new physical model is proposed: the gold atoms with deep energy levels, Ec −0.55 eV ...
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