Results 151 to 160 of about 156,764 (197)

2.11 Hydrogen sensitive MOS structures

Vacuum, 1977
Abstract It is shown that hydrogen in the ambient atmosphere changes the flatband voltage of palladium gate MOS-structures. The physical mechanisms behind this phenomenon are discussed. Experimental results on the detection of hydrogen in air, argon and nitrogen are given.
I. Lundstrom, M.S. Shivaraman, C. Svensson   +2 more
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Surface reactions on MOS structures

Journal of Applied Physics, 1974
The morphology of surface reactions for Au/SiO2/Si structures has been studied as a function of environment. It was found that the reaction between thin gold film dots and thermally oxidized Si was strongly influenced by the partial pressure of oxygen.
E. I. Alessandrini, D. R. Campbell, K. N. Tu   +2 more
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Ionic current in MOS structures

Annales des Télécommunications, 2004
A new approach of determining dynamic ionic current-voltage characteristic that is due to ion transport phenomenon in the oxide is presented. In this approach, the formulation of I–V characteristics ofmos device can be achieved through the use of the theoretical model of mobile ion distribution in oxides.
Hamid Bentarzi, Rachid Bouderbala, Ahmed Zerguerras   +2 more
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The MOS Structure

2011
The metal-oxide-semiconductor (MOS) capacitor is an important structure, which is incorporated in the surface of most semiconductor devices. It forms an essential part of a MOSFET which in turn is an important device used in large-scale integration. A simple physical approach applied to MOS structure and a behavior of ideal MOS capacitor, which are ...
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Tunneling in thin MOS structures

Journal of Vacuum Science and Technology, 1974
Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22–40 Å have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with
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Instantaneous characteristics of MOS structures

Journal of Physics E: Scientific Instruments, 1977
A simple, rapid experimental method is proposed for obtaining the parameters of each MOS device from the profile of the derived curve dCn/dVg of the capacitance-voltage characteristic, which is closely correlated to the level of disorder existing in the I-S interfacial region.
B Balland, J J Marchand, P Pinard
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Physical limitations of MOS structures

Microelectronics Reliability, 1969
The physical model of the MOS structure is re-assessed with particular reference to its usefulness in the understanding of the behaviour of MOSTs near the threshold or transition region and under high surface field and channel field conditions of operation.
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Structure of pentacarbonyl(cycloheptatrienyl)(cyclopentadienyl)dimolybdenum(Mo–Mo)

Acta Crystallographica Section C Crystal Structure Communications, 1988
[Mo 2 (C 5 H 5 )(C 7 H 7 )(CO) 5 ] cristallise dans P2 1 /c avec affinement jusqu'a 0,0222. La molecule consiste en un fragment Mo(η-C 7 H 7 )(CO 2 ) et un fragment Mo(η-C 5 H 5 )(CO) 3 , les deux etant lies par liaison metal ...
R. L. Beddoes, A. Ricalton, M. W. Whiteley   +2 more
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Organoimido complexes of Mo(IV), Mo(V) and Mo(VI): preparation, structure and reactivity

Polyhedron, 1986
Abstract Two series of p-tolylimido (Ntol) complexes of Mo(VI), Mo(V) and Mo(IV) are described. One series, containing diethyldithiocarbamate ligands, is formed via oxygen atom abstraction from Mo(VI)O(Ntol)(S2CNEt2)2 using tertiary phosphines which affords the oxo-bridged Mo(V) dimer [Mo(Ntol)(S2CNEt2)2]2O and the Mo(IV) species Mo(Ntol)(S2CNEt2)2 ...
C.Y. Chou, D.D. Devore, S.C. Huckett, E.A. Maatta, J.C. Huffman, F. Takusagawa   +5 more
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Electro luminescence from MOS structures

2014
Electro luminescence from MOS structures is investigated. Broadband visible light emission is observed from Au/SiO2/n-type Si MOS tunnel junctions. Their spectra show the same peak position for both polarities of the bias voltage but the detailed shape is different due to the involvement of different surface plasmon modes.
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