Results 121 to 130 of about 20,503 (202)

Thickness Influences on Structural and Optical Properties of Thermally Annealed (GaIn)₂O₃ Films. [PDF]

Nanomaterials (Basel)
Zhang S, Zhang F, Sun T, Chen Z, Liu X, Li H, Xie S, Yang W, Li Y.   +8 more
europepmc   +1 more source

One-dimensional photonic crystal nano-ridge surface emitting lasers epitaxially grown on a standard 300 mm silicon wafer. [PDF]

Light Sci Appl
Fahmy EMB, Ouyang Z, Colucci D, Le Thomas N, Van Campenhout J, Kunert B, Van Thourhout D.   +6 more
europepmc   +1 more source

Uncovering the influence of nitridation on the dislocation density at atomistic scale in III-Nitrides MOCVD/MOVPE epitaxy process. [PDF]

Sci Rep
Saxena PK, Srivastava P, Srivastava A, Saxena A.   +3 more
europepmc   +1 more source

Circumventing the Uncertainties of the Liquid Phase in the Compositional Control of VLS III-V Ternary Nanowires Based on Group V Intermix. [PDF]

Nanomaterials (Basel)
Dubrovskii VG.
europepmc   +1 more source

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Large-area MoS 2 deposition via MOVPE

Journal of Crystal Growth, 2017
Abstract The direct deposition of the 2D transition metal dichalcogenide MoS2 via metal-organic vapour phase epitaxy (MOVPE) is investigated. Growth is performed in a commercial AIXTRON horizontal hot-wall reactor. Molybdenum hexacarbonyl (MCO) and Di-tert-butyl sulfide (DTBS) are used as metal-organic precursors for molybdenum and sulfur ...
Marx, Matthias, Nordmann, Sven, Knoch, Joachim, Franzen, Christopher, Stampfer, Christoph, Andrzejewski, Dominik, Kümmell, Tilmar, Bacher, Gerd, Heuken, Michael, Kalisch, Holger, Vescan, Andrei   +10 more
openaire   +2 more sources

Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE

, 2020
Homoepitaxial (100) β-Ga2O3 films were grown on substrates with miscut angles of 2°, 4°, and 6° toward [00 1 ¯] by metal organic vapor phase epitaxy. Step-flow growth mode, resulting in smooth film surfaces and high crystalline quality, could only be ...
S. B. Anooz, R. Grüneberg, C. Wouters, R. Schewski, M. Albrecht, A. Fiedler, K. Irmscher, Z. Galazka, W. Miller, G. Wagner, J. Schwarzkopf, A. Popp   +11 more
semanticscholar   +1 more source

MOVPE of Large-Scale MoS_2/WS_2, WS_2/MoS_2, WS_2/Graphene and MoS_2/Graphene 2D-2D Heterostructures for Optoelectronic Applications

MRS Advances, 2020
Most publications on (opto)electronic devices based on 2D materials rely on single monolayers embedded in classical 3D semiconductors, dielectrics and metals.
A. Grundmann, C. McAleese, B. Conran, A. Pakes, D. Andrzejewski, T. Kümmell, G. Bacher, K. Teo, M. Heuken, H. Kalisch, A. Vescan   +10 more
semanticscholar   +1 more source

Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template

, 2020
AlGaN films were grown on face-to-face annealed sputter-deposited AlN/sapphire (FFA Sp-AlN) templates via metalorganic vapor phase epitaxy (MOVPE), and the growth behavior of the AlGaN films was investigated.
K. Uesugi, K. Shojiki, Yuta Tezen, Y. Hayashi, H. Miyake   +4 more
semanticscholar   +1 more source

Progress in Modeling of III-Nitride MOVPE

, 2020
This review provides an introduction to III-Nitrides MOVPE process modeling and its application to the design and optimization of MOVPE processes. Fundamentals of the MOVPE process with emphasis on transport phenomena are covered. Numerical techniques to
M. Dauelsberg, R. Talalaev
semanticscholar   +1 more source