Results 131 to 140 of about 20,503 (202)
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MOVPE growth of GaAs with growth rates up to 280 µm/h
, 2020Manufacturing of III-V devices is a well-established technique but there is a strong demand to decrease production costs. MOVPE, as an industrial scale production method, suffers from long process times and high precursor costs. In this work, we focus on
R. Lang +4 more
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Progress in Crystal Growth and Characterization of Materials, 1997
Abstract The development of II–VI MOVPE is reviewed, contrasting the narrow bandgap materials with the wide bandgap. Common issues are the need to grow the layers at lower temperatures than their III–V cousins in order to avoid point defects. This means that II–VI MOVPE occurs in a surface kinetic regime for precursor decomposition and has stimulated
S J C IRVINE +4 more
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Abstract The development of II–VI MOVPE is reviewed, contrasting the narrow bandgap materials with the wide bandgap. Common issues are the need to grow the layers at lower temperatures than their III–V cousins in order to avoid point defects. This means that II–VI MOVPE occurs in a surface kinetic regime for precursor decomposition and has stimulated
S J C IRVINE +4 more
openaire +1 more source
Semiconductor Science and Technology, 1991
The critical steps in the development of MOVPE for the fabrication of MCT focal plane arrays (FPAs) are outlined. Improved purity of the source organometallics has enabled background donor concentrations in the mid 1014 cm-3 to be achieved, together with controlled back doping with donors or acceptors.
S J C Irvine +4 more
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The critical steps in the development of MOVPE for the fabrication of MCT focal plane arrays (FPAs) are outlined. Improved purity of the source organometallics has enabled background donor concentrations in the mid 1014 cm-3 to be achieved, together with controlled back doping with donors or acceptors.
S J C Irvine +4 more
openaire +1 more source
Journal of Crystal Growth, 1986
Ga1−xInxAs1−ySby alloys have been grown by metalorganic vapor phase epitaxy (MOVPE) using trimethyl compounds of Ga In, As, and Sb (TMGa, TMIn, TMAs, and TMSb) plus AsH3 in an atmospheric pressure, horizontal, infrared heated reactor.For the first time, alloys near the center of the region of solid immiscibility have been grown.
M.J. Cherng +5 more
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Ga1−xInxAs1−ySby alloys have been grown by metalorganic vapor phase epitaxy (MOVPE) using trimethyl compounds of Ga In, As, and Sb (TMGa, TMIn, TMAs, and TMSb) plus AsH3 in an atmospheric pressure, horizontal, infrared heated reactor.For the first time, alloys near the center of the region of solid immiscibility have been grown.
M.J. Cherng +5 more
openaire +1 more source
MOVPE‐Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications
physica status solidi (b), 2018The structural and optical properties of InGaSb/GaP(001) type‐II quantum dots (QDs) grown by metalorganic vapor phase epitaxy (MOVPE) are studied. Growth strategies as growth interruption (GRI) after deposition of InGaSb and Sb‐flush prior to QD growth ...
E. Sala +7 more
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Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN
Journal of Crystal Growth, 2019MOVPE growth of AlN layers on bulk AlN substrates with low threading dislocation density (
A. Mogilatenko +11 more
semanticscholar +1 more source
physica status solidi (a), 2006
AbstractThis paper reports the in‐depth and in‐plane inhomogeneities in InN films. Samples of InN are grown on sapphire substrates without or with a buffer using the atmospheric‐pressure MOVPE. For the in‐depth inhomogeneity analysis, the conventional PL measurement using an excitation source with a different wavelength is made from both the front ...
Akio Yamamoto +3 more
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AbstractThis paper reports the in‐depth and in‐plane inhomogeneities in InN films. Samples of InN are grown on sapphire substrates without or with a buffer using the atmospheric‐pressure MOVPE. For the in‐depth inhomogeneity analysis, the conventional PL measurement using an excitation source with a different wavelength is made from both the front ...
Akio Yamamoto +3 more
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Early history of MOVPE reactor development
Journal of Crystal Growth, 2019MOVPE technology has rapidly grown from a laboratory research novelty in the 1960’s to the dominant production method for epitaxial materials used in high-performance compound semiconductors devices.
Christine A. Wang
semanticscholar +1 more source
Microelectronic Engineering, 1992
Abstract In the field of optoelectronics the increasing complexity of components architecture requires a highly advanced and flexible growth technique. In this paper it will be demonstrated that by applying metalorganic vapor phase epitaxy (MOVPE) all requirements such as high speed, high performance, high yield, integrability, high throughput and ...
openaire +1 more source
Abstract In the field of optoelectronics the increasing complexity of components architecture requires a highly advanced and flexible growth technique. In this paper it will be demonstrated that by applying metalorganic vapor phase epitaxy (MOVPE) all requirements such as high speed, high performance, high yield, integrability, high throughput and ...
openaire +1 more source
Journal of Crystal Growth, 2019
High growth rate of GaAs more than 90 μm/h is achieved in the attempt of the productivity improvement of solar cells. The design concept is derived from the MOVPE reactor for nitrides.
Koh Matsumoto +9 more
semanticscholar +1 more source
High growth rate of GaAs more than 90 μm/h is achieved in the attempt of the productivity improvement of solar cells. The design concept is derived from the MOVPE reactor for nitrides.
Koh Matsumoto +9 more
semanticscholar +1 more source