Results 161 to 170 of about 20,503 (202)

MOVPE of AlInAs HEMT structures

Journal of Crystal Growth, 1991
Abstract The growth by MOVPE and device applications of AlInAs HEMT structures have been reported by several groups over the past few years. This paper reviews the technological achievements up to date, presents recent results on AlInAs HEMTs and discusses future requirements and approaches to the growth of AlInAs HEMT structures suitable for high ...
Leye Aina, Mike Mattingly, Mary Serio, Eric Martin   +3 more
openaire   +1 more source

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs

IEEE Electron Device Letters, 2016
A. Green, K. Chabak, E. Heller, R. Fitch, M. Baldini, A. Fiedler, K. Irmscher, G. Wagner, Z. Galazka, S. Tetlak, A. Crespo, K. Leedy, G. Jessen   +12 more
semanticscholar   +1 more source

MOVPE Grown Gallium Phosphide–Silicon Heterojunction Solar Cells

IEEE Journal of Photovoltaics, 2017
Markus Feifel, J. Ohlmann, J. Benick, T. Rachow, S. Janz, M. Hermle, F. Dimroth, J. Belz, A. Beyer, K. Volz, D. Lackner   +10 more
semanticscholar   +1 more source

Single-photon emission at 1.55 μm from MOVPE-grown InAs quantum dots on InGaAs/GaAs metamorphic buffers

, 2017
M. Paul, F. Olbrich, J. Höschele, S. Schreier, J. Kettler, S. Portalupi, M. Jetter, P. Michler   +7 more
semanticscholar   +1 more source

Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

Journal of Electronic Materials, 2016
M. Tadjer, M. Mastro, N. Mahadik, M. Currie, V. Wheeler, J. Freitas, Jordan D. Greenlee, J. Hite, K. Hobart, C. Eddy, F. Kub   +10 more
semanticscholar   +1 more source

MOVPE technology

Proceedings of LEOS '93, 2002
openaire   +1 more source

Planetary MOVPE Reactor Modelling

1994
C Waucquez, J Marchal
openaire   +1 more source

m‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle m‐Plane GaN Substrates

, 2018
A. Tanaka, Y. Ando, K. Nagamatsu, M. Deki, H. Cheong, Barry Ousmane, M. Kushimoto, S. Nitta, Y. Honda, H. Amano   +9 more
semanticscholar   +1 more source

Correlation of sapphire off‐cut and reduction of defect density in MOVPE grown AlN

, 2016
A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, M. Weyers   +6 more
semanticscholar   +1 more source

MOVPE of crystalline Ge1Sb2Te4 (GST)

2014
Chalcogenide phase change materials show significant promise on the road to an ideal memory. Ge-Sb-Te alloys (GST) are considered to be one of the most suitable compounds for this application and are already widely used as non-volatile phase change memory in optical data storage and in first PRAM (Phase-change Random Access Memory) devices today [1, 2].
Schuck, Martin, Riess, Sally, Schreiber, Marcel, Mussler, Gregor, Mennicken, Max, Grützmacher, Detlev, Hardtdegen, Hilde   +6 more
openaire   +1 more source