Results 111 to 120 of about 29,884 (210)

Estimation method for bit upset ratio of NAND flash memory induced by heavy ion irradiation

AIP Advances
In order to estimate the bit upset ratio of NAND flash memory induced by heavy ion irradiation, starting from the physical mechanism of the bit upset of NAND flash memory, an analytical model based on statistical methods was developed to describe the ...
Jiangkun Sheng, Mengtong Qiu, Peng Xu, Lili Ding, Yinhong Luo, Zhibin Yao, Fengqi Zhang, Shilong Gou, Zujun Wang, Yuanyuan Xue   +9 more
doaj   +1 more source

Implementing bidirectional logic with backhopping in magnetic tunnel junctions

AIP Advances
A bidirectional logic gate has been designed based on the backhopping phenomenon observed in magnetic tunnel junctions (MTJ) at high bias. The magnetization dynamics of each magnetic layer of the MTJ—having materials and geometry of a standard spin ...
Shafin Bin Hamid, Ramit Dutta, Orchi Hassan, Md Zunaid Baten   +3 more
doaj   +1 more source

Saving of NAND/NOR gates by inhibition or d-inhibition [PDF]

The Computer Journal, 1980
M. Rabel, D. Dubus, A. Tosser
openaire   +2 more sources

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Small Structures
Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park   +15 more
doaj   +1 more source

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]

Nano Lett
Fernandes L, Wodzro S, Venkatesan P, Ravikumar P, Lee MY, Shon M, Chakraborty D, Song T, Kang S, Soliman S, Tian M, Yeager J, Adler J, Chen J, Wang Z, Wolfe D, Yu S, Padovani A, Datta S, Ray B, Khan A.   +20 more
europepmc   +1 more source

Cryogenic performance evaluation of commercial SP4T microelectromechanical switch for quantum computing applications. [PDF]

Microsyst Nanoeng
Lee YB, Devitt C, Zhu X, Yost N, Gu Y, Bhave SA.   +5 more
europepmc   +1 more source

Recent progress in HfO₂-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]

Nanoscale Adv
Kang HY, Shin YH, Kim DE, Kwon DW, Jeong JK.   +4 more
europepmc   +1 more source

Retracted: Visual Construction of Logical AND and NAND Gates

Journal of Chemistry, 2023
openaire   +2 more sources

Universal Logic-in-Memory Gates Using Reconfigurable Silicon Transistors. [PDF]

Micromachines (Basel)
Kim S, Kim N, Ko Y, Lim D.
europepmc   +1 more source

Advances in Semiconductor Optical Amplifier Technologies for All-Optical Logic Gate Implementations: A Comprehensive Review. [PDF]

Nanomaterials (Basel)
Cui J, Zoiros KE, Kotb A.
europepmc   +1 more source