Results 171 to 180 of about 272,034 (235)

Fast photo-carrier multiplication by engineered potential trap in MoS₂/Ge double junction phototransistor. [PDF]

Sci Rep
Park Y, Jung M, Jeong HB, Jeong HY, Sim S, Yoo G, Heo J.   +6 more
europepmc   +1 more source

Recent Developments of Advanced Broadband Photodetectors Based on 2D Materials. [PDF]

Nanomaterials (Basel)
Tian Y, Liu H, Li J, Liu B, Liu F.
europepmc   +1 more source

Photodetector based on bis-2,6-[2-(2-oxoindolin-3-ylidene)malononitrile]naphthalene derivatives/zinc oxide nanorod heterostructures with machine vision observation and artificial intelligence pattern recognition. [PDF]

RSC Adv
Chen CS, Cai YH, Yang YH, Huang ZL, Zhang HZ, Sermon Wu Y, Li MH, Kuo MY, Chen H, Li YH.   +9 more
europepmc   +1 more source

Fast Near‐Infrared Photodetection Using III–V Colloidal Quantum Dots

Advanced Materials, 2022
AbstractColloidal quantum dots (CQDs) are promising materials for infrared (IR) light detection due to their tunable bandgap and their solution processing; however, to date, the time response of CQD IR photodiodes is inferior to that provided by Si and InGaAs.
Bin Sun, Amin Morteza Najarian, Laxmi Kishore Sagar, Margherita Biondi, Min‐Jae Choi, Xiyan Li, Larissa Levina, Se‐Woong Baek, Chao Zheng, Seungjin Lee, Ahmad R. Kirmani, Randy Sabatini, Jehad Abed, Mengxia Liu, Maral Vafaie, Peicheng Li, Lee J. Richter, Oleksandr Voznyy, Mahshid Chekini, Zheng‐Hong Lu, F. Pelayo García de Arquer, Edward H. Sargent   +21 more
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Near-infrared photodetection and time-resolved photocurrents in cadmium arsenide heterojunctions

Optics Letters
Dirac and Weyl semimetals, such as cadmium arsenide (Cd3As2), have recently attracted attention for use in high-speed photodetectors that operate at longer infrared wavelengths, where conventional semiconductor-based photodetectors have a limited performance. In this Letter, we explore near-infrared (960 nm) photodetection in a
Jacob Brady, Arman Rashidi, Alexander Mikhailovsky, Susanne Stemmer   +3 more
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Toward stable gate-controlled GaSb nanowires near-infrared photodetection and photocommunication

Applied Physics Letters
Surface states originating from the dangling bonds or native oxide layers are challenging III-V group semiconductor nanowires (NWs) in future electronics and optoelectronics. In this work, a plasma surface treatment technique is adopted for effectively modulating the surface states of GaSb NWs, benefiting the bias-stress stability of field-effect ...
Bowen Yang, Zixu Sa, Guangcan Wang, Zeqi Zang, Pengsheng Li, Yanxue Yin, Zai-xing Yang   +6 more
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Atomic-Scale Interface Modification in Complex Oxide Heterojunctions for Near-Infrared Photodetection

ACS Nano
Photodetectors that detect near-infrared (NIR) light serve as important components in contemporary energy-efficient optoelectronic devices. However, detecting the low-energy photons of the NIR light has long been challenging since the ease of photoexcitation inevitably involves increasing the background current in the dark. Herein, we report the atomic-
Sanghyeok Ryou, Sanghyeon Mo, Doyeop Kim, Sungjun Choi, Jaewhan Oh, Yongsoo Yang, Kitae Eom, Hyungwoo Lee   +7 more
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Near-infrared Photodetection in Graphene/β-In2Se3 Heterostructure

Asia Communications and Photonics Conference/International Conference on Information Photonics and Optical Communications 2020 (ACP/IPOC), 2020
Photoresponsivity of 1.17 A/W is observed in graphene/molecular beam epitaxy grown β-state In2Se3 photodetector at 1550 nm light excitation and 0.35 V bias, with smaller than 2 ms response time.
Wen Shao, Xiaoping Xie, Yunqiang Zheng, Wei Wang, Tiantian Li, Feifan Wang, Yong Wang, Stephanie Law, Tingyi Gu   +8 more
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Near-infrared photodetection in tin halide perovskites via compositional engineering

Materials Science and Engineering: R: Reports
Hansol Park, Cheong Beom Lee, Seon-Jeong Lim, Hakjun Kim, Kyeounghak Kim, Hui Joon Park   +5 more
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Evaporated Polycrystalline Germanium for Near Infrared Photodetection

MRS Proceedings, 1998
AbstractWe present low cost near infrared photodetectors based on polycrystalline Ge film thermally evaporated on a silicon substrate. We demonstrate that, by proper choice of deposition conditions and device configuration, a responsivity of 16mA/W and a response time of a few nanoseconds can be achieved at the wavelength of 1.3micron.
COLACE, Lorenzo, Masini G, Galluzzi F, ASSANTO, GAETANO   +3 more
openaire   +2 more sources