Results 181 to 190 of about 8,394,012 (247)
Explaining the Origin of Negative Poisson's Ratio in Amorphous Networks With Machine Learning
Advanced Intelligent Discovery, EarlyView.This review summarizes how machine learning (ML) breaks the “vicious cycle” in designing auxetic amorphous networks. By transitioning from traditional “black‐box” optimization to an interpretable “AI‐Physics” closed‐loop paradigm, ML is shown to not only discover highly optimized structures—such as all‐convex polygon networks—but also unveil hidden ...
Shengyu Lu, Xiangying Shen
wiley +1 more source
Controversial issues in negative bias temperature instability
Microelectronics Reliability, 2018 Abstract In spite of 50 years of history, there is still no consensus on the basic physics of Negative Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric, currently vie for dominance. The differences appear fundamental: one model holds that NBTI is a diffusion-limited process and the other holds that it is ...
James H. Stathis +2 more
openaire +2 more sources
Negative Bias Temperature Instability in CMOS Devices
Microelectronic Engineering, 2005 This paper reviews the experimental and modeling efforts to understand the mechanism of Negative Bias Temperature Instability (NBTI) in p-MOSFETs, which is becoming a serious reliability concern for analog and digital CMOS circuits. Conditions for interface and bulk trap generation and their dependence onstress voltage and oxide field, temperature and ...
MAHAPATRA, S +5 more
core +4 more sources
Models of Source/Drain Bias on Negative Bias Temperature Instability
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006 This paper discusses the influence of source/drain (S/D) bias on negative bias temperature instability (NBTI) in pMOS devices. It is found that with the S/D bias increase, the NBTI degradation is initially reduced, but it increases with higher S/D bias. Two models are presented to explain the underlying mechanisms.
Z.H. Gan +7 more
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An analytical model for negative bias temperature instability
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010 Negative bias temperature instability (NBTI) has become one of the major limiters for product lifetime, and various models have been proposed in order to explain NBTI. In this paper, an analytical model for DC NBTI and AC NBTI is proposed. This model describes the different time dependence of DC NBTI degradation at both short- and long-term stresses ...
Shengcheng Wang, Gang Du, Xiaoyan Liu
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Negative-bias-temperature-instability in metal–insulator–semiconductor structures
Materials Science and Engineering: B, 2004 We have demonstrated that negative-bias-temperature-instability (NBTI) significantly decreases the minority carrier generation lifetime as well as modifying the dominant source supplying minority carriers to the inversion layer at the semiconductor-insulator interface.
Volkos, S. N. +4 more
openaire +3 more sources
Impact of substrate bias on p-MOSFET negative bias temperature instability
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual., 2005 The negative bias temperature instability (NBTI) of p-MOSFETs is an important reliability issue for digital as well as analog CMOS circuits. To date, characterization and modeling efforts to analyze the NBTI mechanism involve devices stressed with zero substrate bias (VB).
BHARATH KUMAR, P +5 more
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An analytical model for negative bias temperature instability
Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design - ICCAD '06, 2006Negative bias temperature instability (NBTI) in PMOS transistors has become a significant reliability concern in present day digital circuit design. With continued scaling, the effect of NBTI has rapidly grown in prominence, forcing designers to resort to a pessimistic design style using guard-banding.
Sanjay Kumar +2 more
openaire +1 more source
Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs
IEEE Transactions on Electron Devices, 2017 We present a comprehensive study of bias temperature instability (BTI) in GaN MOSFETs under moderate positive and negative gate bias stress. We investigate the evolution of threshold voltage (V T ), maximum transconductance (g m,max ), and subthreshold ...
Alex Guo, Jesus A del Alamo
exaly +2 more sources