Results 191 to 200 of about 8,394,012 (247)

Mechanism of negative-bias-temperature instability

Journal of Applied Physics, 1991
Although negative-bias-temperature instability in metal-oxide-semiconductor integrated circuits has been minimized empirically, the exact mechanism is unknown. We argue in this paper that the mechanism of negative-bias-temperature instability can be modeled by a first-order electrochemical reaction between hydrogenated trivalent silicon, a neutral ...
C. E. Blat, E. H. Nicollian, E. H. Poindexter   +2 more
openaire   +1 more source

The negative bias temperature instability in MOS devices: A review

Microelectronics Reliability, 2006
Abstract Negative bias temperature instability (NBTI), in which interface traps and positive oxide charge are generated in metal–oxide–silicon (MOS) structures under negative gate bias, in particular at elevated temperature, has come to the forefront of critical reliability phenomena in advanced CMOS technology. The purpose of this review is to bring
James H. Stathis, Sufi Zafar
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On the permanent components of negative bias temperature instability

2013 25th International Conference on Microelectronics (ICM), 2013
We have analyzed NBTI-induced interface-trap (ΔNit) and border-trap (ΔNbt) creation with respect to NBTI stress conditions using on the fly oxide trap (OTFOT) method. These type of traps are both NBTI permanent components. We have found that the exponent, n of ΔNit tends to saturate with stress temperature. However ΔNbt shows an opposite behavior. Also,
Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil   +4 more
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A Comprehensive Study of Negative Bias Temperature Instability in Mos Structures

Microelectronics Reliability, 2023
il lavoro descritto in questo articolo ha portato allo sviluppo di un modello analitico dello shift della tensione di soglia basato sulla degradazione di ossidi in MOSFET soggetti a invecchiamento. Il modello è stato validato con esperimenti su dispositivi di qualità di produzione.
Irrera, Fernanda, Broccoli, Giordano
openaire   +1 more source

Negative Bias Temperature Instability of SiC MOSFET

Materials Science Forum, 2016
MOSFETs and MOS capacitors (MOSCAPs) have been fabricated on Si-face of 4H-SiC to investigate the negative bias temperature instability (NBTI) characteristics of SiC MOSFETs. The shifts of threshold voltage of MOSFETs ranged from -216mV to -1257mV after stressed by 1000sec of -1V to -15V gate bias, correspondingly.
Cheng Tyng Yen, Hsiang Ting Hung, Chien Chung Hung, Chwan Ying Lee, Heng Yuan Lee, Lurng Shehng Lee, Yao Feng Huang, Chi Yin Cheng, Pei Ju Chuang, Fu Jen Hsu   +9 more
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Charge Trapping and the Negative Bias Temperature Instability

ECS Meeting Abstracts, 2010
Abstract not Available.
Wolfgang Goes, Franz Schanovsky, Philipp Hehenberger, Paul-Juergen Wagner, Tibor Grasser   +4 more
openaire   +1 more source

Recovery behavior in negative bias temperature instability

Microelectronics Reliability, 2013
Abstract The recovery mechanism observed in oxynitride gate pMOSFETs after negative bias temperature (NBT) stresses is reviewed. The recovery can be divided into two elements, fast recoverable- and permanent components (R and P). An interesting features, universality, observed in R was examined.
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Negative-bias temperature instability of GaN MOSFETs

2016 IEEE International Reliability Physics Symposium (IRPS), 2016
We present a detailed study of the threshold voltage (V t ) instability of GaN n-MOSFETs under negative gate stress. We have investigated Vt shift, subthreshold swing (S) degradation and transconductance (gm) degradation under negative gate voltage stress of different duration at different stress voltages and temperatures.
Alex Guo, Jesus A. del Alamo
openaire   +1 more source

Recovery study of negative bias temperature instability

Microelectronic Engineering, 2009
In this work, we report a study of negative bias temperature instability (NBTI) recovery in high-k/metal-gate p-channel field effect transistors (pFETs) with different interfaces. New results on the dependence of recovery on interface, stressing voltage (V"s), stressing temperature and stressing time (t"s) are shown.
Miaomiao Wang, Sufi Zafar, James H. Stathis   +2 more
openaire   +1 more source

Correlation Between Oxide Trap Generation and Negative-Bias Temperature Instability

IEEE Electron Device Letters, 2012
Evidence shows that substantial interface degradation under negative-bias temperature (NBT) stressing does not result in any apparent oxide trap generation.
Diing Shenp Ang, Z Q Teo, K C Leong
exaly   +2 more sources