Results 201 to 210 of about 8,394,012 (247)

Negative Bias Temperature Instability in Nanoscale Devices

2013
In this Chapter we focus on the NBTI of nanoscale SiGe pFETs and compare with the results obtained on large area devices. In particular, we assess the impact of individually trapped charges on the characteristics of SiGe devices with varying Si cap thicknesses, since this gate-stack parameter was found to be crucial for the standard NBTI reliability on
Jacopo Franco, Ben Kaczer, Guido Groeseneken   +2 more
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Negative bias temperature instability (NBTI) recovery with bake

Microelectronics Reliability, 2008
Abstract Negative bias temperature instability (NBTI) is a major degradation mechanism of PMOSFET devices. When the p-channel field effect transistor (PFET) gate is biased negatively with respect to the channel, as in a CMOS inverter, at an elevated temperature the threshold voltage (Vt) decreases (absolute value increases for application ...
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Physical mechanisms of negative-bias temperature instability

Applied Physics Letters, 2005
We report first-principles calculations that elucidate the mechanisms that underlie key features of negative-bias temperature instability (NBTI). We show that the depassivation of Si–H bonds by protons released in the Si substrate is consistent with the observed increase in interface-trap density.
L. Tsetseris, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides   +4 more
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Towards Understanding Negative Bias Temperature Instability

2008 IEEE International Integrated Reliability Workshop Final Report, 2008
Modeling efforts of negative bias temperature instability date back to the work of Jeppson and Svensson in 1977, who proposed the basic form of the popular reaction-diffusion model. This model is still at the heart of many modeling attempts today. However, recent research indicates that even refined variants of this model, while getting some features ...
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TCAD Modeling of Negative Bias Temperature Instability

2006 International Conference on Simulation of Semiconductor Processes and Devices, 2006
At elevated temperatures, pMOS transistors show a considerable drift in fundamental device parameters such as the threshold voltage when a large negative bias is applied. This phenomenon, known as negative bias temperature instability, is regarded as one of the most important reliability concerns in highly scaled pMOS transistors. Modeling efforts date
T. Grasser, R. Entner, O. Triebl, H. Enichlmair, R. Minixhofer   +4 more
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Impact of negative bias temperature instability on product parametric drift

2004 International Conferce on Test, 2005
A systematic test methodology is presented that comprehends the impact of negative bias temperature instability on product parametric drift. In specific NBTI degradation mechanisms in digital CMOS circuits and transistors are presented. A test guard-banding technique to estimate parameter drift under BI and customer use conditions is also given.
Vijay Reddy, John M. Carulli, Anand T. Krishnan, William Bosch, Brendan Burgess   +4 more
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Critical Modeling Issues in Negative Bias Temperature Instability

ECS Transactions, 2009
Both the physical mechanisms as well as the modeling of negative bias temperature instability (NBTI) have attracted growing attention during the last years. While the reaction-diffusion theory had been the dominant explanation for a relatively long period, a growing number of authors have recently voiced their doubts regarding its validity. We give a
Tibor Grasser, Wolfgang Goes, Ben Kaczer
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Impact of negative bias temperature instability on digital circuit reliability

Microelectronics Reliability, 2003
We have examined the impact of NBTI degradation on digital circuits through the stressing of ring oscillator circuits. By subjecting the circuit to pMOS NBTI stress, we have unambiguously determined the circuit reliability impact of NBTI. We demonstrate that the relative frequency degradation of the NBTI stressed ring oscillator increases as the ...
Vijay Reddy, Anand T. Krishnan, Andrew Marshall, John Rodriguez, Sreedhar Natarajan, Tim Rost, Srikanth Krishnan   +6 more
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Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET

Microelectronics Reliability, 2005
From the detailed analysis of the dependence of threshold voltage shift and positive fixed charge/interface state generation on the stress time/temperature of negative bias temperature instability (NBTI) for various nitrogen concentrations at the oxide/Si interface, the mechanism of nitrogen-enhanced NBTI effect has been studied experimentally.
Shyue Seng Tan, Tupei Chen, Chew Hoe Ang, Lap Chan   +3 more
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A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability

IEEE Transactions on Device and Materials Reliability, 2007
The active research conducted in the last couple of years demonstrates that negative bias temperature instability (NBTI) is one of the most serious reliability concerns for highly scaled pMOSFETs. As a fundamental prerequisite for a proper understanding of the phenomenon, accurate measurements are indispensable.
Tibor Grasser, Paul-JÜrgen Wagner, Philipp Hehenberger, Wolfgang Goes, Ben Kaczer   +4 more
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