Results 211 to 220 of about 8,394,012 (247)

Negative bias temperature instability in n-channel power VDMOSFETs

Microelectronics Reliability, 2008
Abstract Negative gate bias is used in some applications for faster switching off the n-channel MOS devices. It is shown in this study that NBT stress-related instability in commercial n-channel power VDMOSFETs could be actually more serious than in corresponding p-channel devices.
Danijel Dankovic, Ivica Manic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Ninoslav Stojadinovic   +5 more
openaire   +2 more sources

Degradation dynamics, recovery, and characterization of negative bias temperature instability

Microelectronics Reliability, 2005
This article describes several deficiencies with traditional assessments of negative bias temperature instability (NBTI) in pMOS transistors and proposes methods for handling them. These effects include: (a) a decrease in the rate of degradation over time, (b) a deviation of the stress bias dependence of NBTI lifetime from simple analytical models, (c)
Maxim Ershov, Sharad Saxena, Sean Minehane, P. Clifton, Mark Redford, R. Lindley, H. Karbasi, S. Graves, S. Winters   +8 more
openaire   +2 more sources

The role of hydrogen in negative bias temperature instability of pMOSFET

Chinese Physics, 2006
The NBTI degradation phenomenon and the role of hydrogen during NBT stress are presented in this paper. It is found that PBT stress can recover a fraction of Vth shift induced by NBTI. However, this recovery is unstable. The original degradation reappears soon after reapplication of the NBT stress condition.
Li Zhong-He, Liu Hong-Xia, Hao Yue
openaire   +1 more source

Effect of the process flow on negative-bias-temperature-instability

2003 8th International Symposium Plasma- and Process-Induced Damage., 2003
PMOSFET parametric degradation during negative-bias high temperature aging can depend on many steps of the manufacturing process flow. The effect of some process steps on NBTI is discussed with a phenomenological approach. In particular, we report a case in which plasma induced charging reduces the PMOSFET instability.
A. Scarpa, L. van Marwijk, A. Cacciato, F. Ballarin   +3 more
openaire   +1 more source

Hole trapping and the negative bias temperature instability

2011
With the continuing miniaturization of MOS transistors, a phenomenon called the negative bias temperature instability (NBTI) has evolved into a serious reliability concern. In the newest device technologies, its detrimental impact complicates reliable lifetime projection of the devices.
openaire   +1 more source

Negative-bias temperature instability induced electron trapping

Applied Physics Letters, 2008
Despite four decades of research, the physics responsible for the negative-bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect transistors is still unresolved. The current NBTI debate focuses on the dominance of either a hole trapping/detrapping mechanism or a hydrogen depassivation mechanism.
J. P. Campbell, K. P. Cheung, J. S. Suehle, A. Oates   +3 more
openaire   +1 more source

Modeling and simulation of negative bias temperature instability

2007
Halbleiter Prozess- und Bauelementsimulatoren sind etablierte Werkzeuge um die Entwicklungszeiten von Halbleiterprozessen so kurz wie möglich zu halten. Unter Zuhilfenahme numerischer Simulation kann der Bauelementingenieur dutzende Experimente in der Zeit durchführen, in der auf herkömmliche Weise nur die Herstellung eines einzigen Siliziumloses ...
openaire   +1 more source

The role of hydrogen migration in negative-bias temperature instability

Applied Surface Science, 2003
Abstract The role of hydrogen in negative-bias temperature instability (NBTI) at Si/SiO 2 and Si/SiO x N y interfaces was investigated by using molecular models of the interfaces and first-principles calculations. The results suggest that the hydrogen is likely to migrate as an electrically neutral atom rather than a proton.
Jiro Ushio, Kikuo Watanabe, Keiko Kushida-Abdelghafar, Takuya Maruizumi   +3 more
openaire   +1 more source

Negative bias temperature instability (NBTI) of bulk FinFETs

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual., 2005
We investigated the negative bias temperature instability (NBTI) of bulk FinFETs for the first time. Since the bulk FinFET has a body terminal, it is more flexible in studying the NBTI characteristics than the SOI FinFET (no body terminal). The dependence of NBTI on the back bias is smaller in a 100 nm bulk FinFET with a fin width of 30 nm than in ...
null Sang-Yan Kim, null Tai-su Park, null Jac-Sung Lee, null Donggum Park, null Ki-Nam Kim, null Jong-Ho Lee   +5 more
openaire   +1 more source

Modelling negative bias temperature instabilities in advanced p-MOSFETs

Microelectronics Reliability, 2005
Abstract The decrease of the threshold voltage V th of p-channel metal-oxide semiconductor field effect transistors (p-MOSFET) with ultrathin gate dielectric layers under negative bias temperature stress is studied. A degradation model is developed, that accounts for the generation of Si 3 Si (P b0 ) centers and bulk oxide defects, induced by ...
openaire   +1 more source