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Modeling and simulation of negative bias temperature instability
2007Halbleiter Prozess- und Bauelementsimulatoren sind etablierte Werkzeuge um die Entwicklungszeiten von Halbleiterprozessen so kurz wie möglich zu halten. Unter Zuhilfenahme numerischer Simulation kann der Bauelementingenieur dutzende Experimente in der Zeit durchführen, in der auf herkömmliche Weise nur die Herstellung eines einzigen Siliziumloses ...
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The role of hydrogen migration in negative-bias temperature instability
Applied Surface Science, 2003Abstract The role of hydrogen in negative-bias temperature instability (NBTI) at Si/SiO 2 and Si/SiO x N y interfaces was investigated by using molecular models of the interfaces and first-principles calculations. The results suggest that the hydrogen is likely to migrate as an electrically neutral atom rather than a proton.
Jiro Ushio +3 more
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Negative bias temperature instability (NBTI) of bulk FinFETs
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual., 2005We investigated the negative bias temperature instability (NBTI) of bulk FinFETs for the first time. Since the bulk FinFET has a body terminal, it is more flexible in studying the NBTI characteristics than the SOI FinFET (no body terminal). The dependence of NBTI on the back bias is smaller in a 100 nm bulk FinFET with a fin width of 30 nm than in ...
null Sang-Yan Kim +5 more
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Modelling negative bias temperature instabilities in advanced p-MOSFETs
Microelectronics Reliability, 2005Abstract The decrease of the threshold voltage V th of p-channel metal-oxide semiconductor field effect transistors (p-MOSFET) with ultrathin gate dielectric layers under negative bias temperature stress is studied. A degradation model is developed, that accounts for the generation of Si 3 Si (P b0 ) centers and bulk oxide defects, induced by ...
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Neutral interface traps for Negative Bias Temperature Instability
2011 International Reliability Physics Symposium, 2011Negative Bias Temperature Instability (NBTI) is a critical reliability issue and becoming more and more seriously in the modern CMOS technology. Many models have been proposed to account for the NBTI phenomena, but most of the models are based on the popular hydrogen reaction-diffusion (R-D) mechanisms.
Z. Chen +3 more
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Temperature stabilization for negative bias temperature instability
2012Previous research was conducted on a Complementary Metal Oxide Semiconductor (CMOS) to determine the impact of a phenomenon known as Negative Bias Temperature Instability (NBTI). NBTI affects the operational characteristics of these devices, with a stronger effect on p-channel devices.
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Negative Bias Temperature Instability in (Si)Ge pMOSFETs
2013A comprehensive analysis of the NBTI reliability of SiGe channel pMOSFETs is reported in this chapter. First the impact of individual gate stack parameters on the device reliability is discussed. The experimental learning is then combined to propose a reliability-oriented gate stack optimization, which is shown to enable ultrathin EOT devices with ...
Jacopo Franco +2 more
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Role of Hydrogen in Negative-Bias Temperature Instability
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002Jiro Ushio +3 more
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Negative bias temperature instability (NBTI) experiment
2012The phenomenon known as Negative Bias Temperature Instability (NBTI) impacts the operational characteristics of Complementary Metal Oxide Semiconductor (CMOS) devices, and tends to have a stronger effect on p-channel devices. This instability is observed with an applied "on" biasing during normal operation and can be accelerated with thermal stress.
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