Results 221 to 230 of about 8,394,012 (247)

Neutral interface traps for Negative Bias Temperature Instability

2011 International Reliability Physics Symposium, 2011
Negative Bias Temperature Instability (NBTI) is a critical reliability issue and becoming more and more seriously in the modern CMOS technology. Many models have been proposed to account for the NBTI phenomena, but most of the models are based on the popular hydrogen reaction-diffusion (R-D) mechanisms.
Z. Chen, X. Zhou, Y. Z. Hu, K. S. Machavolu   +3 more
openaire   +1 more source

Temperature stabilization for negative bias temperature instability

2012
Previous research was conducted on a Complementary Metal Oxide Semiconductor (CMOS) to determine the impact of a phenomenon known as Negative Bias Temperature Instability (NBTI). NBTI affects the operational characteristics of these devices, with a stronger effect on p-channel devices.
openaire   +1 more source

Negative Bias Temperature Instability in (Si)Ge pMOSFETs

2013
A comprehensive analysis of the NBTI reliability of SiGe channel pMOSFETs is reported in this chapter. First the impact of individual gate stack parameters on the device reliability is discussed. The experimental learning is then combined to propose a reliability-oriented gate stack optimization, which is shown to enable ultrathin EOT devices with ...
Jacopo Franco, Ben Kaczer, Guido Groeseneken   +2 more
openaire   +1 more source

Role of Hydrogen in Negative-Bias Temperature Instability

Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002
Jiro Ushio, Kikuo Watanabe, Keiko Kushida-Abdelghafar, Takuya Maruizumi   +3 more
openaire   +1 more source

Negative-Bias Temperature Instability of p-GaN Gate GaN-on-Si Power Devices

IEEE Transactions on Device and Materials Reliability, 2022
Wen Yang, Jiann Shiun Yuan
exaly  

Negative bias temperature instability (NBTI) experiment

2012
The phenomenon known as Negative Bias Temperature Instability (NBTI) impacts the operational characteristics of Complementary Metal Oxide Semiconductor (CMOS) devices, and tends to have a stronger effect on p-channel devices. This instability is observed with an applied "on" biasing during normal operation and can be accelerated with thermal stress.
openaire   +1 more source

Bias Temperature Instability of 4H-SiC p- and n-Channel MOSFETs Induced by Negative Stress at 200 °C

IEEE Transactions on Electron Devices, 2022
Jilong Hao, Jiang Lu, Yun Bai
exaly  

Lifetime Reliability Enhancement of Microprocessors

ACM Computing Surveys, 2015
Sungho Kang, Jaeil Lim
exaly  

The Negative Bias Temperature Instability in MOS Devices

2006 IEEE International Integrated Reliability Workshop Final Report, 2006
openaire   +1 more source

Effect of Negative Bias Temperature Instability on the Single Event Upset Response of 40 nm Flip-Flops

IEEE Transactions on Nuclear Science, 2012
Lloyd Massengill, Bharat Bhuva, N J Gaspard   +2 more
exaly