Results 221 to 230 of about 23,788 (263)

Impact of negative bias temperature instability on digital circuit reliability

Microelectronics Reliability, 2003
We have examined the impact of NBTI degradation on digital circuits through the stressing of ring oscillator circuits. By subjecting the circuit to pMOS NBTI stress, we have unambiguously determined the circuit reliability impact of NBTI. We demonstrate that the relative frequency degradation of the NBTI stressed ring oscillator increases as the ...
Vijay Reddy, Anand T. Krishnan, Andrew Marshall, John Rodriguez, Sreedhar Natarajan, Tim Rost, Srikanth Krishnan   +6 more
openaire   +2 more sources

Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET

Microelectronics Reliability, 2005
From the detailed analysis of the dependence of threshold voltage shift and positive fixed charge/interface state generation on the stress time/temperature of negative bias temperature instability (NBTI) for various nitrogen concentrations at the oxide/Si interface, the mechanism of nitrogen-enhanced NBTI effect has been studied experimentally.
Shyue Seng Tan, Tupei Chen, Chew Hoe Ang, Lap Chan   +3 more
openaire   +1 more source

A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability

IEEE Transactions on Device and Materials Reliability, 2007
The active research conducted in the last couple of years demonstrates that negative bias temperature instability (NBTI) is one of the most serious reliability concerns for highly scaled pMOSFETs. As a fundamental prerequisite for a proper understanding of the phenomenon, accurate measurements are indispensable.
Tibor Grasser, Paul-JÜrgen Wagner, Philipp Hehenberger, Wolfgang Goes, Ben Kaczer   +4 more
openaire   +1 more source

Negative bias temperature instability in n-channel power VDMOSFETs

Microelectronics Reliability, 2008
Abstract Negative gate bias is used in some applications for faster switching off the n-channel MOS devices. It is shown in this study that NBT stress-related instability in commercial n-channel power VDMOSFETs could be actually more serious than in corresponding p-channel devices.
Danijel Dankovic, Ivica Manic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Ninoslav Stojadinovic   +5 more
openaire   +2 more sources

Degradation dynamics, recovery, and characterization of negative bias temperature instability

Microelectronics Reliability, 2005
This article describes several deficiencies with traditional assessments of negative bias temperature instability (NBTI) in pMOS transistors and proposes methods for handling them. These effects include: (a) a decrease in the rate of degradation over time, (b) a deviation of the stress bias dependence of NBTI lifetime from simple analytical models, (c)
Maxim Ershov, Sharad Saxena, Sean Minehane, P. Clifton, Mark Redford, R. Lindley, H. Karbasi, S. Graves, S. Winters   +8 more
openaire   +2 more sources

Impact of substrate bias on p-MOSFET negative bias temperature instability

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual., 2005
The negative bias temperature instability (NBTI) of p-MOSFETs is an important reliability issue for digital as well as analog CMOS circuits. To date, characterization and modeling efforts to analyze the NBTI mechanism involve devices stressed with zero substrate bias (VB).
BHARATH KUMAR, P, DALEI, TR, VARGHESE, D, SAHA, D, MAHAPATRA, S, ALAM, MA   +5 more
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The role of hydrogen in negative bias temperature instability of pMOSFET

Chinese Physics, 2006
The NBTI degradation phenomenon and the role of hydrogen during NBT stress are presented in this paper. It is found that PBT stress can recover a fraction of Vth shift induced by NBTI. However, this recovery is unstable. The original degradation reappears soon after reapplication of the NBT stress condition.
Li Zhong-He, Liu Hong-Xia, Hao Yue
openaire   +1 more source

Effect of the process flow on negative-bias-temperature-instability

2003 8th International Symposium Plasma- and Process-Induced Damage., 2003
PMOSFET parametric degradation during negative-bias high temperature aging can depend on many steps of the manufacturing process flow. The effect of some process steps on NBTI is discussed with a phenomenological approach. In particular, we report a case in which plasma induced charging reduces the PMOSFET instability.
A. Scarpa, L. van Marwijk, A. Cacciato, F. Ballarin   +3 more
openaire   +1 more source

Hole trapping and the negative bias temperature instability

2011
With the continuing miniaturization of MOS transistors, a phenomenon called the negative bias temperature instability (NBTI) has evolved into a serious reliability concern. In the newest device technologies, its detrimental impact complicates reliable lifetime projection of the devices.
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Negative-bias temperature instability induced electron trapping

Applied Physics Letters, 2008
Despite four decades of research, the physics responsible for the negative-bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect transistors is still unresolved. The current NBTI debate focuses on the dominance of either a hole trapping/detrapping mechanism or a hydrogen depassivation mechanism.
J. P. Campbell, K. P. Cheung, J. S. Suehle, A. Oates   +3 more
openaire   +1 more source