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Mechanism of Threshold Voltage Shift (ΔVth) Caused by Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron pMOSFETs
Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, 2001 Chuan H. Liu, Ming T. Lee, Chih-Yung Lin, Jenkon Chen, Klaus Schruefer, Thomas Schiml, Anastasios A. Katsetos, Zhijian Yang, Nivo Rovedo, Terence B. Hook, Clement Wann +10 moreopenaire +1 more sourceSub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification
2024 IEEE International Reliability Physics Symposium (IRPS)Da Wang, Yongkang Xue, Yong Liu 0035, Pengpeng Ren, Zixuan Sun, Zirui Wang, Yueyang Liu, Zhijun Cheng, Haiyang Yang, Xiangli Liu, Blacksmith Wu, Kanyu Cao, Runsheng Wang, Zhigang Ji, Ru Huang 0001 +14 moreopenaire +2 more sources