Results 161 to 170 of about 8,396,680 (189)

Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2002
This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films. The capability of our model has been demonstrated by excellent agreement between the fitted curves and ...
C.H. Liu, M.T. Lee, null Chih-Yung Lin, J. Chen, K. Schruefer, J. Brighten, N. Rovedo, T.B. Hook, M.V. Khare, null Shih-Fen Huang, C. Wann, null Tze-Chiang Chen, T.H. Ning   +12 more
openaire   +1 more source

Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB

2016 IEEE International Electron Devices Meeting (IEDM), 2016
In this work, the oxide electric field (Eox) reduction caused by negatively charged traps is proposed to explain the robustness of SiGe pMOSFETs to negative gate bias temperature instability (NBTI) stress. The high density of negatively charged acceptor-like traps close to the SiGe valance band (E v ) lowers the E ox and reduces the NBTI degradation ...
Guangfan Jiao, Maria Toledano-Luque, Kab-Jin Nam, Nakanishi Toshiro, Seung-Hun Lee, Jin-Soak Kim, Thomas Kauerauf, EunAe Chung, Dong-il Bae, Geumjong Bae, Dong-Won Kim, Kihyun Hwang   +11 more
openaire   +1 more source

Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors

Microelectronics Reliability, 2007
Abstract In some automotive applications, high negative bias is used to faster switch off n-type devices. This exceptional operative gate voltage at relative high temperature can induce instability of device parameters (e.g. threshold voltage, transconductance, saturation current, etc.
Stefano Aresu, Werner Kanert, Reinhard Pufall, Michael Goroll   +3 more
openaire   +2 more sources

Negative bias temperature instability (NBTI) effects on p-Si/n-InGaAs hybrid CMOSFETs for digital applications

Microsystem Technologies, 2019
This paper reports, for the first time, the influence of pMOS-negative-bias-temperature-instability (pMOS-NBTI) on the logic performance degradation of a hybrid CMOS inverter, comprising Si pMOS and In0.70Ga0.30As nMOS device, followed by a three-stage-ring-oscillator.
Suchismita De, Suchismita Tewari, Abhijit Biswas   +2 more
openaire   +1 more source

Negative bias temperature instability (NBTI) aware low leakage circuit design

2019
The tremendous scaling of the semiconductor devices is producing the high-density integrated circuits (ICs). Metal-oxide-semiconductor field-effect transistors (MOSFETs) are the basic building blocks for the ICs. The lower area requirement with increased numbers of devices on a substrate makes it an interesting field of very-large-scale integration ...
openaire   +1 more source

Negative-bias-temperature-instability (NBTI) for p/sup +/-gate pMOSFET with ultra-thin plasma-nitrided gate dielectrics

7th International Symposium on Plasma- and Process-Induced Damage, 2003
The timdfield and temperature dependences of negativebias-temperature instability (NBTI) on 2.6nm thick plasma-nitrided silicon dioxide films have been studied and compared to the conventional thermal nitridation. It is found that timdfield dependence of NBTI is comparable for both decoupled plasma-nitrided oxides (DPNO) and rapid thermal nitrided ...
null Shyue-Seng Tan, null Tupei Chen, null Chow-Hoe Ang, C. Lek, null Werthe Lin, null Re Zhen Zheng, A. See, null Lap Chan   +7 more
openaire   +1 more source

A model for negative bias temperature instability (NBTI) in oxide and high /spl kappa/ pFETs 13/spl times/-C6D8C7F5F2

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 2004
A model for the negative bias temperature instability (NBTI) is proposed. Unlike previous empirical models, this model is derived from physics principles. The model attributes NBTI to de-passivation of SiO/sub 2//Si interface and its two distinguishing features are: application of statistical mechanics to calculate depassivated site density increase ...
S. Zafar, B.H. Lee, J. Stathis, A. Callegari, null Tak Ning   +4 more
openaire   +1 more source

Charge Trapping, Negative Bias Temperature Instability (NBTI) and Breakdown related Reliability Issues in High k /Gate Dielectric Stacks

ECS Meeting Abstracts, 2006
Abstract not Available.
Sufi Zafar, Alexander Vayshenker, Alessando Callegari, Evgeni Gusev, Vijay Narayanan, Gilbert Singco   +5 more
openaire   +1 more source

Negative bias temperature instability (NBTI) experiment

2012
The phenomenon known as Negative Bias Temperature Instability (NBTI) impacts the operational characteristics of Complementary Metal Oxide Semiconductor (CMOS) devices, and tends to have a stronger effect on p-channel devices. This instability is observed with an applied "on" biasing during normal operation and can be accelerated with thermal stress.
openaire   +1 more source

A fast extraction method of negative bias temperature instability (NBTI) generated permanent defects activation energy using temperature step stress

Semiconductor Science and Technology
Abstract With the migration of semiconductor manufacturing technology, the challenge of negative bias temperature instability (NBTI) becomes increasingly important and must be considered during the circuit design stage as so-called design technology cooptimization.
Rui Gao, Zixuan Wang, Zhigang Li, Chao Li, Yujuan He, Xiaowen Zhang, Xiaoling Lin, Liwei Wang, Yiqiang Chen, Guoguang Lu   +9 more
openaire   +1 more source