Results 151 to 160 of about 8,396,680 (189)

Deep Insights of Negative Bias Temperature Instability (NBTI) Degradation

2025 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS)
Karan Singh, Jyoti Mahur
exaly   +2 more sources

Essential aspects of Negative Bias Temperature Instability (NBTI)

ECS Transactions, 2011
We develop a comprehensive theoretical framework for explaining the key and characteristic experimental signatures of NBTI. The framework is based on an uncorrelated dynamics of interface-defect creation/annihilation described by Reaction-Diffusion (R-D) theory and hole trapping/detrapping into/out-of oxide defects based on a generalized Shockley-Read ...
Ahmad E. Islam, Souvik Mahapatra, Shweta Deora, Vrajesh D. Maheta, Muhammad Ashraful Alam   +4 more
openaire   +1 more source

Negative bias temperature instability (NBTI) of bulk FinFETs

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual., 2005
We investigated the negative bias temperature instability (NBTI) of bulk FinFETs for the first time. Since the bulk FinFET has a body terminal, it is more flexible in studying the NBTI characteristics than the SOI FinFET (no body terminal). The dependence of NBTI on the back bias is smaller in a 100 nm bulk FinFET with a fin width of 30 nm than in ...
null Sang-Yan Kim, null Tai-su Park, null Jac-Sung Lee, null Donggum Park, null Ki-Nam Kim, null Jong-Ho Lee   +5 more
openaire   +1 more source

Capturing the Four Broad Features of Negative Bias Temperature Instability (NBTI)

ECS Meeting Abstracts, 2011
Abstract not Available.
Ahmad E. Islam, Souvik Mahapatra, Muhammad Ashraful Alam   +2 more
openaire   +1 more source

An Approach to Detect Negative Bias Temperature Instability (NBTI) in Ultra-Deep Submicron Technologies

2007 IEEE International Symposium on Circuits and Systems, 2007
Negative bias temperature instability (NBTI) is a pMOSFET's degradation mechanism that can result in threshold voltage shift. This shift, if large enough, can cause serious reliability concerns for MOSFET analog and digital circuits. This paper presents a prognostic circuit that measures the VT shift in a pMOSFET and reports its state-of-health.
Ronald Carlsten, Jeremy Ralston-Good, Douglas Goodman   +2 more
openaire   +1 more source

A method for negative bias temperature instability (NBTI) measurements on power VDMOS transistors

Measurement Science and Technology, 2012
A method suitable for performing NBTI measurements on power p-channel VDMOS transistors is described. A practical implementation using simple boosting circuit for obtaining required gate stress voltage and sweep I–V measurements for the threshold voltage shift determination is presented. Experimental results are discussed in terms of the time necessary
A Prijić, D Danković, Lj Vračar, I Manić, Z Prijić, N Stojadinović   +5 more
openaire   +1 more source

Negative bias temperature instability (NBTI) recovery with bake

Microelectronics Reliability, 2008
Abstract Negative bias temperature instability (NBTI) is a major degradation mechanism of PMOSFET devices. When the p-channel field effect transistor (PFET) gate is biased negatively with respect to the channel, as in a CMOS inverter, at an elevated temperature the threshold voltage (Vt) decreases (absolute value increases for application ...
openaire   +2 more sources

Recovery modeling of negative bias temperature instability (NBTI) for SPICE-compatible circuit aging simulators

ACM Journal on Emerging Technologies in Computing Systems, 2014
A feasible computational framework that enables improved predictability of NBTI degradation within commercially available tools is discussed. The NBTI model is used for real-time circuit operation where recovery is present. The complementary nature of implementation is readily incorporated into existing model extraction and verification tools.
Haldun Küflüoglu, Cathy Chancellor, Min Chen 0024, Claude Cirba, Vijay Reddy   +4 more
openaire   +2 more sources

Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices

Chinese Physics B, 2022
A comprehensive study of the negative and positive bias temperature instability (NBTI/PBTI) of 3D FinFET devices with different small channel lengths is presented. It is found while with the channel lengths shrinking from 100 nm to 30 nm, both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn better.
Ren-Ren Xu, Qing-Zhu Zhang, Long-Da Zhou, Hong Yang, Tian-Yang Gai, Hua-Xiang Yin, Wen-Wu Wang   +6 more
openaire   +1 more source

Negative bias temperature instability (NBTI) in deep sub-micron p/sup +/-gate pMOSFETs

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515), 2002
The device degradation, characterized by threshold voltage shift (/spl Delta/ V/sub th/), in deep sub-micron p/sup +/ polysilicon gate pMOSFETs due to negative bias temperature instability (NBTI) stress is studied. It is found that the negative threshold voltage shift tends to saturate with stress time. Both hydrogen ions and neutral atoms are believed
Y.F. Chen, M.H. Lin, C.H. Chou, W.C. Chang, S.C. Huang, Y.J. Chang, K.Y. Fu, M.T. Lee, C.H. Liu, S.K. Fan   +9 more
openaire   +1 more source