Results 141 to 150 of about 8,396,680 (189)

Total Recovery of Defects Generated by Negative Bias Temperature Instability (NBTI)

2008 IEEE International Integrated Reliability Workshop Final Report, 2008
NBTI degradation is known to generate defects which can partially recover during a fast interruption. This paper investigates the hole de-trapping effect but also re-trapping kinetics and re-passivation of interface states. The comparison of relaxation at low and high temperatures allows us to conclude that the annealing at 300degC is a real recovery ...
Didier Goguenheim
exaly   +2 more sources

Material Dependence of Negative Bias Temperature Instability (NBTI) Stress and Recovery in SiON p-MOSFETs

ECS Transactions, 2009
Negative Bias Temperature Instability (NBTI) is studied in Silicon Oxynitride (SiON) p-MOSFETs using a recently developed Ultra-Fast On-The-Fly linear drain current method. It is shown that both stress and recovery phases of NBTI are strongly influenced by SiON gate insulator process.
Souvik Mahapatra, Vrajesh Maheta, Shweta Deora, E. N. Kumar, Shweta Purawat, Chris Olsen, Khaled Ahmed, Ahmed Islam, M. A. Alam   +8 more
core   +3 more sources

Dynamic Negative Bias Temperature Instability (NBTI) of Low-Temperature Polycrystalline Silicon (LTPS) Thin-Film Transistors

IEEE Electron Device Letters, 2008
The dynamic negative bias temperature instability (NBTI) on low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) was investigated in detail. Experimental results revealed the threshold voltage shift of LTPS TFTs after the NBTI stress decreases with increasing frequency, which is different from the frequency-independence of ...
C Y Cheng, C H Kao, Y K Fang
exaly   +2 more sources

Investigation of Negative Bias Temperature Instability (NBTI) Effects on Standard Cell Library Circuits Performance

2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 2019
Negative bias temperature instability (NBTI) is an significant reliability problem that can affect circuit performance. This paper presents an investigation of reliability on standard cell library circuit performance based on R-D model. Predictive Technology Model (PTM) and HSPICE MOSRA were used for circuit reliability study.
Hanim Hussin, Abdul Karimi Halim
exaly   +2 more sources

Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics

Microelectronic Engineering, 2005
The acceleration of Negative Bias Temperature Instability (NBTI) in oxynitride gate dielectrics is explained within the framework of disorder-controlled hydrogen kinetics. Nitrogen is assumed to introduce deeper localized hydrogen states in gate oxide film, thus increasing the dispersion of hydrogen transport.
Ben Kaczer, Guido Groeseneken
exaly   +2 more sources

Modeling to predict the time evolution of negative bias temperature instability (NBTI) induced single event transient pulse broadening

Science China Technological Sciences, 2012
An analytical model is proposed to calculate single event transient (SET) pulse width with bulk complementary metal oxide semiconductor (CMOS) technology based on the physics of semiconductor devices. Combining with the most prevalent negative bias temperature instability (NBTI) degradation model, a novel analytical model is developed to predict the ...
Yaqing Chi, Jianjun Chen, Shuming Chen   +2 more
exaly   +2 more sources

A Generalized Reaction–Diffusion Model With Explicit H– $\hbox{H}_{2}$ Dynamics for Negative-Bias Temperature-Instability (NBTI) Degradation

IEEE Transactions on Electron Devices, 2007
In this paper, negative-bias temperature-instability (NBTI) modeling, based on a generalized reaction-diffusion framework, is presented. Unlike the previous models, the release of atomic hydrogen from the Si-H bonds at the Si/oxide interface and its subsequent conversion into molecular H2 are considered without the (unphysical) assumption of ...
Muhammad Alam, Haldun Kufluoglu
exaly   +2 more sources

Advanced On-The-Fly Method with Correction of Initial Values to Characterize Negative Bias Temperature Instability Reliability (NBTI)

2008 IEEE International Integrated Reliability Workshop Final Report, 2008
This paper presents a new on-the-fly (OTF) method in order to evaluate the effective threshold voltage (VT) shift without relaxation effects during negative bias temperature instability (NBTI) stresses on pMOSFETs. This method, called OTF_CIV, for on-the-fly with correction of initial values, allows us also to estimate the initial current at stress ...
Didier Goguenheim
exaly   +2 more sources

A Comprehensive Assessment of Current Trends in Negative Bias Temperature Instability (NBTI) Deterioration

2021 7th International Conference on Signal Processing and Communication (ICSC), 2021
Shruti Kalra
exaly   +2 more sources

On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology

IEEE Electron Device Letters, 2023
Longda Zhou, Runsheng Wang, Zixuan Sun   +2 more
exaly   +2 more sources