Results 121 to 130 of about 204 (157)

Recovery modeling of negative bias temperature instability (NBTI) for SPICE-compatible circuit aging simulators

ACM Journal on Emerging Technologies in Computing Systems, 2014
A feasible computational framework that enables improved predictability of NBTI degradation within commercially available tools is discussed. The NBTI model is used for real-time circuit operation where recovery is present. The complementary nature of implementation is readily incorporated into existing model extraction and verification tools.
Haldun Küflüoglu, Cathy Chancellor, Min Chen 0024, Claude Cirba, Vijay Reddy   +4 more
openaire   +2 more sources

Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices

Chinese Physics B, 2022
A comprehensive study of the negative and positive bias temperature instability (NBTI/PBTI) of 3D FinFET devices with different small channel lengths is presented. It is found while with the channel lengths shrinking from 100 nm to 30 nm, both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn better.
Ren-Ren Xu, Qing-Zhu Zhang, Long-Da Zhou, Hong Yang, Tian-Yang Gai, Hua-Xiang Yin, Wen-Wu Wang   +6 more
openaire   +1 more source

Negative bias temperature instability (NBTI) in deep sub-micron p/sup +/-gate pMOSFETs

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515), 2002
The device degradation, characterized by threshold voltage shift (/spl Delta/ V/sub th/), in deep sub-micron p/sup +/ polysilicon gate pMOSFETs due to negative bias temperature instability (NBTI) stress is studied. It is found that the negative threshold voltage shift tends to saturate with stress time. Both hydrogen ions and neutral atoms are believed
Y.F. Chen, M.H. Lin, C.H. Chou, W.C. Chang, S.C. Huang, Y.J. Chang, K.Y. Fu, M.T. Lee, C.H. Liu, S.K. Fan   +9 more
openaire   +1 more source

Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2002
This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films. The capability of our model has been demonstrated by excellent agreement between the fitted curves and ...
C.H. Liu, M.T. Lee, null Chih-Yung Lin, J. Chen, K. Schruefer, J. Brighten, N. Rovedo, T.B. Hook, M.V. Khare, null Shih-Fen Huang, C. Wann, null Tze-Chiang Chen, T.H. Ning   +12 more
openaire   +1 more source

Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB

2016 IEEE International Electron Devices Meeting (IEDM), 2016
In this work, the oxide electric field (Eox) reduction caused by negatively charged traps is proposed to explain the robustness of SiGe pMOSFETs to negative gate bias temperature instability (NBTI) stress. The high density of negatively charged acceptor-like traps close to the SiGe valance band (E v ) lowers the E ox and reduces the NBTI degradation ...
Guangfan Jiao, Maria Toledano-Luque, Kab-Jin Nam, Nakanishi Toshiro, Seung-Hun Lee, Jin-Soak Kim, Thomas Kauerauf, EunAe Chung, Dong-il Bae, Geumjong Bae, Dong-Won Kim, Kihyun Hwang   +11 more
openaire   +1 more source

Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors

Microelectronics Reliability, 2007
Abstract In some automotive applications, high negative bias is used to faster switch off n-type devices. This exceptional operative gate voltage at relative high temperature can induce instability of device parameters (e.g. threshold voltage, transconductance, saturation current, etc.
Stefano Aresu, Werner Kanert, Reinhard Pufall, Michael Goroll   +3 more
openaire   +2 more sources

Negative bias temperature instability (NBTI) effects on p-Si/n-InGaAs hybrid CMOSFETs for digital applications

Microsystem Technologies, 2019
This paper reports, for the first time, the influence of pMOS-negative-bias-temperature-instability (pMOS-NBTI) on the logic performance degradation of a hybrid CMOS inverter, comprising Si pMOS and In0.70Ga0.30As nMOS device, followed by a three-stage-ring-oscillator.
Suchismita De, Suchismita Tewari, Abhijit Biswas   +2 more
openaire   +1 more source

Negative bias temperature instability (NBTI) aware low leakage circuit design

2019
The tremendous scaling of the semiconductor devices is producing the high-density integrated circuits (ICs). Metal-oxide-semiconductor field-effect transistors (MOSFETs) are the basic building blocks for the ICs. The lower area requirement with increased numbers of devices on a substrate makes it an interesting field of very-large-scale integration ...
openaire   +1 more source

Advanced On-The-Fly Method with Correction of Initial Values to Characterize Negative Bias Temperature Instability Reliability (NBTI)

2008 IEEE International Integrated Reliability Workshop Final Report, 2008
This paper presents a new on-the-fly (OTF) method in order to evaluate the effective threshold voltage (VT) shift without relaxation effects during negative bias temperature instability (NBTI) stresses on pMOSFETs. This method, called OTF_CIV, for on-the-fly with correction of initial values, allows us also to estimate the initial current at stress ...
Christelle Benard, Jean-Luc Ogier, Didier Goguenheim   +2 more
openaire   +1 more source

Negative-bias-temperature-instability (NBTI) for p/sup +/-gate pMOSFET with ultra-thin plasma-nitrided gate dielectrics

7th International Symposium on Plasma- and Process-Induced Damage, 2003
The timdfield and temperature dependences of negativebias-temperature instability (NBTI) on 2.6nm thick plasma-nitrided silicon dioxide films have been studied and compared to the conventional thermal nitridation. It is found that timdfield dependence of NBTI is comparable for both decoupled plasma-nitrided oxides (DPNO) and rapid thermal nitrided ...
null Shyue-Seng Tan, null Tupei Chen, null Chow-Hoe Ang, C. Lek, null Werthe Lin, null Re Zhen Zheng, A. See, null Lap Chan   +7 more
openaire   +1 more source