Results 101 to 110 of about 204 (157)

First-principles study of hydrogen-related defects at the a-SiO₂/Si(100) interface. [PDF]

Sci Rep
Luo H, Qi D, Ma Z, Guo X, Zhou H, Liu Y, Zuo X.   +6 more
europepmc   +1 more source

Ion-exchange functionalized polystyrene-based composites: synthesis, conductive hybridization, and environmental applications. [PDF]

RSC Adv
El Mansoub AA, El Nashar RM, Fahmy HM, Hani HA, Abulnour AMG, El Sayed MM.   +5 more
europepmc   +1 more source

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology. [PDF]

Nanomaterials (Basel)
Radamson HH, Miao Y, Zhou Z, Wu Z, Kong Z, Gao J, Yang H, Ren Y, Zhang Y, Shi J, Xiang J, Cui H, Lu B, Li J, Liu J, Lin H, Xu H, Li M, Cao J, He C, Duan X, Zhao X, Su J, Du Y, Yu J, Wu Y, Jiang M, Liang D, Li B, Dong Y, Wang G.   +30 more
europepmc   +1 more source

Development and Verification of Compact Model for NBTI (Negative Bias Temperature Instability) Effect Observed in p-MOSFET

Development and Verification of Compact Model for NBTI (Negative Bias Temperature Instability) Effect Observed in p-MOSFET
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Analysis and impacts of Negative Bias Temperature Instability (NBTI)

2012 IEEE Students' Conference on Electrical, Electronics and Computer Science, 2012
As the Integrated Circuits (IC) density keeps on increasing with the scaling of CMOS devices in each successive technology generation, reliability concerns mainly Negative Bias Temperature Instability (NBTI) becomes a major challenge. NBTI degrades the performance of a PMOS transistor under a negative gate stress. The after effects of NBTI include: (a)
Rajeev Kumar Mishra, Amritanshu Pandey, Sarfraz Alam   +2 more
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Negative bias temperature instability (NBTI) of bulk FinFETs

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual., 2005
We investigated the negative bias temperature instability (NBTI) of bulk FinFETs for the first time. Since the bulk FinFET has a body terminal, it is more flexible in studying the NBTI characteristics than the SOI FinFET (no body terminal). The dependence of NBTI on the back bias is smaller in a 100 nm bulk FinFET with a fin width of 30 nm than in ...
null Sang-Yan Kim, null Tai-su Park, null Jac-Sung Lee, null Donggum Park, null Ki-Nam Kim, null Jong-Ho Lee   +5 more
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Dynamic Negative Bias Temperature Instability (NBTI) of Low-Temperature Polycrystalline Silicon (LTPS) Thin-Film Transistors

IEEE Electron Device Letters, 2008
The dynamic negative bias temperature instability (NBTI) on low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) was investigated in detail. Experimental results revealed the threshold voltage shift of LTPS TFTs after the NBTI stress decreases with increasing frequency, which is different from the frequency-independence of ...
J. C. Liao, Y. K. Fang, C. H. Kao, C. Y. Cheng   +3 more
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Investigation of Negative Bias Temperature Instability (NBTI) Effects on Standard Cell Library Circuits Performance

2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 2019
Negative bias temperature instability (NBTI) is an significant reliability problem that can affect circuit performance. This paper presents an investigation of reliability on standard cell library circuit performance based on R-D model. Predictive Technology Model (PTM) and HSPICE MOSRA were used for circuit reliability study.
Nur Amalina Zamzuri, Hanim Hussin, Muhamad Fitri Zainudin, Abdul Karimi Halim   +3 more
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Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics

Microelectronic Engineering, 2005
The acceleration of Negative Bias Temperature Instability (NBTI) in oxynitride gate dielectrics is explained within the framework of disorder-controlled hydrogen kinetics. Nitrogen is assumed to introduce deeper localized hydrogen states in gate oxide film, thus increasing the dispersion of hydrogen transport.
B. Kaczer, V. Arkhipov, M. Jurczak, G. Groeseneken   +3 more
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A Comprehensive Assessment of Current Trends in Negative Bias Temperature Instability (NBTI) Deterioration

2021 7th International Conference on Signal Processing and Communication (ICSC), 2021
Karan Singh, Shruti Kalra
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