Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization. [PDF]
Wang R +10 more
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Editorial for the Special Issue on MEMS/NEMS Devices and Applications, 3rd Edition. [PDF]
Dai ZX, Ono T, Dai CL.
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Stability and Reliability of van der Waals High-κ SrTiO<sub>3</sub> Field-Effect Transistors with Small Hysteresis. [PDF]
Sattari-Esfahlan SM +8 more
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Near-zero hysteresis van der Waals MnAl<sub>2</sub>S<sub>4</sub> field-effect transistors with low minimal threshold voltage degradation and high thermal stability. [PDF]
Sattari-Esfahlan SM +9 more
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Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor. [PDF]
Liu CH +9 more
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Hidden Order in the Apparent Chaos of Bias Temperature Instability. [PDF]
Bernstein JB.
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Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices. [PDF]
Calzolaro A, Mikolajick T, Wachowiak A.
europepmc +1 more source
4.11 A/1650 V Sapphire-Substrate GaN MIS-HEMTs with Thin Buffer for Medium-Voltage Power Applications. [PDF]
Chen C +7 more
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SRAM Cell Design Challenges in Modern Deep Sub-Micron Technologies: An Overview. [PDF]
Gul W, Shams M, Al-Khalili D.
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