PMOSFET NBTI (negative-bias temperature instability) measurement using ultra-fast switching method
, 2009 Negative bias temperature instability was first discovered in 1966. It only became an important reliability issue in silicon integrated circuits because device scaling leads to an increase in gate electric field.
Boo, Ann Ann.
core
Power-Law Reliability Plotting for Microelectronics. [PDF]
Micromachines (Basel)Bernstein JB.
europepmc +1 more source
Cross Comparison Between Thermal Cycling and High Temperature Stress on I/O Connection Elements. [PDF]
Micromachines (Basel)Dhyani M +3 more
europepmc +1 more source
4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process. [PDF]
Nanomaterials (Basel), 2022 Cheng X +9 more
europepmc +1 more source
A Stepped-Spacer FinFET Design for Enhanced Device Performance in FPGA Applications. [PDF]
Micromachines (Basel)Zareiee M, Mehrad M, Tawfik A.
europepmc +1 more source
Power-Law Time Exponent <i>n</i> and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction-Diffusion Theory. [PDF]
Micromachines (Basel)Dhyani M +3 more
europepmc +1 more source
Investigation of the Combined Effect of Total Ionizing Dose and Time-Dependent Dielectric Breakdown on PDSOI Devices. [PDF]
Micromachines (Basel), 2022 Yang J, Liu H, Yang K.
europepmc +1 more source
Real-Time Monitoring Method and Circuit Based on Built-In Reliability Prediction. [PDF]
Micromachines (Basel)Ren W +5 more
europepmc +1 more source
Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. [PDF]
Nanomaterials (Basel), 2021 Li Y +9 more
europepmc +1 more source
Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers. [PDF]
Micromachines (Basel)O'Sullivan B +9 more
europepmc +1 more source