Results 111 to 120 of about 204 (157)

Modeling to predict the time evolution of negative bias temperature instability (NBTI) induced single event transient pulse broadening

Science China Technological Sciences, 2012
An analytical model is proposed to calculate single event transient (SET) pulse width with bulk complementary metal oxide semiconductor (CMOS) technology based on the physics of semiconductor devices. Combining with the most prevalent negative bias temperature instability (NBTI) degradation model, a novel analytical model is developed to predict the ...
ShuMing Chen, JianJun Chen, YaQing Chi, FanYu Liu, YiBai He   +4 more
openaire   +3 more sources

On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology

IEEE Electron Device Letters, 2023
Da Wang, Longda Zhou, Yongkang Xue, Pengpeng Ren, Zixuan Sun, Zirui Wang, Jianping Wang, Blacksmith Wu, Zhigang Ji, Runsheng Wang, Ru Huang   +10 more
openaire   +3 more sources

Deep Insights of Negative Bias Temperature Instability (NBTI) Degradation

2025 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS)
Karan Singh, Jyoti Mahur
openaire   +3 more sources

Essential aspects of Negative Bias Temperature Instability (NBTI)

ECS Transactions, 2011
We develop a comprehensive theoretical framework for explaining the key and characteristic experimental signatures of NBTI. The framework is based on an uncorrelated dynamics of interface-defect creation/annihilation described by Reaction-Diffusion (R-D) theory and hole trapping/detrapping into/out-of oxide defects based on a generalized Shockley-Read ...
Ahmad E. Islam, Souvik Mahapatra, Shweta Deora, Vrajesh D. Maheta, Muhammad Ashraful Alam   +4 more
openaire   +1 more source

Capturing the Four Broad Features of Negative Bias Temperature Instability (NBTI)

ECS Meeting Abstracts, 2011
Abstract not Available.
Ahmad E. Islam, Souvik Mahapatra, Muhammad Ashraful Alam   +2 more
openaire   +1 more source

Total Recovery of Defects Generated by Negative Bias Temperature Instability (NBTI)

2008 IEEE International Integrated Reliability Workshop Final Report, 2008
NBTI degradation is known to generate defects which can partially recover during a fast interruption. This paper investigates the hole de-trapping effect but also re-trapping kinetics and re-passivation of interface states. The comparison of relaxation at low and high temperatures allows us to conclude that the annealing at 300degC is a real recovery ...
Christelle Benard, Jean-Luc Ogier, Didier Goguenheim   +2 more
openaire   +1 more source

An Approach to Detect Negative Bias Temperature Instability (NBTI) in Ultra-Deep Submicron Technologies

2007 IEEE International Symposium on Circuits and Systems, 2007
Negative bias temperature instability (NBTI) is a pMOSFET's degradation mechanism that can result in threshold voltage shift. This shift, if large enough, can cause serious reliability concerns for MOSFET analog and digital circuits. This paper presents a prognostic circuit that measures the VT shift in a pMOSFET and reports its state-of-health.
Ronald Carlsten, Jeremy Ralston-Good, Douglas Goodman   +2 more
openaire   +1 more source

Negative bias temperature instability (NBTI) recovery with bake

Microelectronics Reliability, 2008
Abstract Negative bias temperature instability (NBTI) is a major degradation mechanism of PMOSFET devices. When the p-channel field effect transistor (PFET) gate is biased negatively with respect to the channel, as in a CMOS inverter, at an elevated temperature the threshold voltage (Vt) decreases (absolute value increases for application ...
openaire   +2 more sources

A method for negative bias temperature instability (NBTI) measurements on power VDMOS transistors

Measurement Science and Technology, 2012
A method suitable for performing NBTI measurements on power p-channel VDMOS transistors is described. A practical implementation using simple boosting circuit for obtaining required gate stress voltage and sweep I–V measurements for the threshold voltage shift determination is presented. Experimental results are discussed in terms of the time necessary
A Prijić, D Danković, Lj Vračar, I Manić, Z Prijić, N Stojadinović   +5 more
openaire   +1 more source

Material Dependence of Negative Bias Temperature Instability (NBTI) Stress and Recovery in SiON p-MOSFETs

ECS Transactions, 2009
Negative Bias Temperature Instability (NBTI) is studied in Silicon Oxynitride (SiON) p-MOSFETs using a recently developed Ultra-Fast On-The-Fly linear drain current method. It is shown that both stress and recovery phases of NBTI are strongly influenced by SiON gate insulator process.
Souvik Mahapatra, Vrajesh Maheta, Shweta Deora, E. N. Kumar, Shweta Purawat, Chris Olsen, Khaled Ahmed, Ahmed Islam, M. A. Alam   +8 more
openaire   +2 more sources