Results 131 to 140 of about 8,396,680 (189)

A Review of Reliability in Gate-All-Around Nanosheet Devices. [PDF]

Micromachines (Basel)
Wang M.
europepmc   +1 more source

Reactions of Hydrogen-Passivated Silicon Vacancies in α-Quartz with Electron Holes and Hydrogen. [PDF]

Nanomaterials (Basel)
Cobos Freire T, Strand J, Shluger AL.
europepmc   +1 more source

Local field effect on charge-capture/emission dynamics. [PDF]

IEEE Trans Electron Devices, 2017
Cheung KP, Veksler D, Campbell JP.
europepmc   +1 more source

An Overview of Hot Carrier Degradation on Gate-All-Around Nanosheet Transistors. [PDF]

Micromachines (Basel)
Zhou H.
europepmc   +1 more source

Positive Bias Temperature Instability in SiC-Based Power MOSFETs. [PDF]

Micromachines (Basel)
Volosov V, Bevilacqua S, Anoldo L, Tosto G, Fontana E, Russo AL, Fiegna C, Sangiorgi E, Tallarico AN.   +8 more
europepmc   +1 more source

First-principles study of hydrogen-related defects at the a-SiO₂/Si(100) interface. [PDF]

Sci Rep
Luo H, Qi D, Ma Z, Guo X, Zhou H, Liu Y, Zuo X.   +6 more
europepmc   +1 more source

Ion-exchange functionalized polystyrene-based composites: synthesis, conductive hybridization, and environmental applications. [PDF]

RSC Adv
El Mansoub AA, El Nashar RM, Fahmy HM, Hani HA, Abulnour AMG, El Sayed MM.   +5 more
europepmc   +1 more source

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology. [PDF]

Nanomaterials (Basel)
Radamson HH, Miao Y, Zhou Z, Wu Z, Kong Z, Gao J, Yang H, Ren Y, Zhang Y, Shi J, Xiang J, Cui H, Lu B, Li J, Liu J, Lin H, Xu H, Li M, Cao J, He C, Duan X, Zhao X, Su J, Du Y, Yu J, Wu Y, Jiang M, Liang D, Li B, Dong Y, Wang G.   +30 more
europepmc   +1 more source

Development and Verification of Compact Model for NBTI (Negative Bias Temperature Instability) Effect Observed in p-MOSFET

Development and Verification of Compact Model for NBTI (Negative Bias Temperature Instability) Effect Observed in p-MOSFET
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Analysis and impacts of Negative Bias Temperature Instability (NBTI)

2012 IEEE Students' Conference on Electrical, Electronics and Computer Science, 2012
As the Integrated Circuits (IC) density keeps on increasing with the scaling of CMOS devices in each successive technology generation, reliability concerns mainly Negative Bias Temperature Instability (NBTI) becomes a major challenge. NBTI degrades the performance of a PMOS transistor under a negative gate stress. The after effects of NBTI include: (a)
Amritanshu Pandey
exaly   +2 more sources