Results 131 to 140 of about 204 (157)

A model for negative bias temperature instability (NBTI) in oxide and high /spl kappa/ pFETs 13/spl times/-C6D8C7F5F2

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 2004
A model for the negative bias temperature instability (NBTI) is proposed. Unlike previous empirical models, this model is derived from physics principles. The model attributes NBTI to de-passivation of SiO/sub 2//Si interface and its two distinguishing features are: application of statistical mechanics to calculate depassivated site density increase ...
S. Zafar, B.H. Lee, J. Stathis, A. Callegari, null Tak Ning   +4 more
openaire   +1 more source

Charge Trapping, Negative Bias Temperature Instability (NBTI) and Breakdown related Reliability Issues in High k /Gate Dielectric Stacks

ECS Meeting Abstracts, 2006
Abstract not Available.
Sufi Zafar, Alexander Vayshenker, Alessando Callegari, Evgeni Gusev, Vijay Narayanan, Gilbert Singco   +5 more
openaire   +1 more source

A Generalized Reaction–Diffusion Model With Explicit H– $\hbox{H}_{2}$ Dynamics for Negative-Bias Temperature-Instability (NBTI) Degradation

IEEE Transactions on Electron Devices, 2007
In this paper, negative-bias temperature-instability (NBTI) modeling, based on a generalized reaction-diffusion framework, is presented. Unlike the previous models, the release of atomic hydrogen from the Si-H bonds at the Si/oxide interface and its subsequent conversion into molecular H2 are considered without the (unphysical) assumption of ...
Haldun KflogluKufluoglu, Muhammad Ashraful Alam   +1 more
openaire   +1 more source

Negative bias temperature instability (NBTI) experiment

2012
The phenomenon known as Negative Bias Temperature Instability (NBTI) impacts the operational characteristics of Complementary Metal Oxide Semiconductor (CMOS) devices, and tends to have a stronger effect on p-channel devices. This instability is observed with an applied "on" biasing during normal operation and can be accelerated with thermal stress.
openaire   +1 more source

A fast extraction method of negative bias temperature instability (NBTI) generated permanent defects activation energy using temperature step stress

Semiconductor Science and Technology
Abstract With the migration of semiconductor manufacturing technology, the challenge of negative bias temperature instability (NBTI) becomes increasingly important and must be considered during the circuit design stage as so-called design technology cooptimization.
Rui Gao, Zixuan Wang, Zhigang Li, Chao Li, Yujuan He, Xiaowen Zhang, Xiaoling Lin, Liwei Wang, Yiqiang Chen, Guoguang Lu   +9 more
openaire   +1 more source

Development and Verification of Compact Model for NBTI (Negative Bias Temperature Instability) Effect Observed in p-MOSFET [PDF]

, 2013
Engineering
openaire  

Annealing Dependence of Negative Bias Temperature Instability (NBTI) in 4H-SiC MOSFETs

Journal of Nanoelectronics and Optoelectronics, 2017
Sang-Mo Koo, Se-Woong Jung, Kyoung-Sook Moon, Sang-Kwon Lee, So-Mang Kim   +4 more
openaire   +1 more source

A Generalized Reaction–Diffusion Model With Explicit H– \hbox{H}₂ Dynamics for Negative-Bias Temperature-Instability (NBTI) Degradation

IEEE Transactions on Electron Devices, 2007
Muhammad Ashraful Alam, Haldun Kufluoglu
exaly  

Monitoring negative bias temperature instability (NBTI) and/or positive bias temperature instability (PBTI)

2013
KIM JAE-JOON, RAO RAHUL M
openaire   +1 more source

Modeling of Negative Bias Temperature Instability (NBTI) for Gate-All-Around (GAA) Stacked Nanosheet Technology

2024 IEEE International Reliability Physics Symposium (IRPS)
Leitao Liu, Jingtian Fang, Ashish Pal, Plamen Asenov, Mohit Bajaj, Bei Deng, Xi-Wei Lin, Souvik Mahapatra, Subi Kengeri, El Mehdi Bazizi   +9 more
openaire   +1 more source