Power-Law Time Exponent <i>n</i> and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction-Diffusion Theory. [PDF]
Dhyani M +3 more
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Real-Time Monitoring Method and Circuit Based on Built-In Reliability Prediction. [PDF]
Ren W +5 more
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Investigation of the Combined Effect of Total Ionizing Dose and Time-Dependent Dielectric Breakdown on PDSOI Devices. [PDF]
Yang J, Liu H, Yang K.
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Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers. [PDF]
O'Sullivan B +9 more
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Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors. [PDF]
Djorić-Veljković S +8 more
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Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors. [PDF]
Li X +6 more
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Re-Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors. [PDF]
Trommer J +19 more
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Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution. [PDF]
Lee JH +5 more
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A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress. [PDF]
Živanović E +7 more
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The Understanding and Compact Modeling of Reliability in Modern Metal-Oxide-Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms. [PDF]
Sun Z, Chen S, Zhang L, Huang R, Wang R.
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