Results 61 to 70 of about 8,396,680 (189)

Negative Bias Temperature Instability in CMOS devices

, 2005
This paper reviews the experimental and modeling efforts to understand the mechanism of Negative Bias Temperature Instability (NBTI) in p-MOSFETs, which is becoming a serious reliability concern for analog and digital CMOS circuits.
Kumar, P. Bharath, Saha, D., Mahapatra, S., Alam, M. A., Dalei, T. R., Varghese, D.   +5 more
core   +2 more sources

Negative-bias-temperature-instability in metal-insulator-semiconductor structures

, 2004
We have demonstrated that negative-bias-temperature-instability (NBTI) significantly decreases the minority carrier generation lifetime as well as modifying the dominant source supplying minority carriers to the inversion layer at the semiconductor ...
Peaker, A. R., Petkos, G., Volkos, S. N., Hawkins, I. D., Efthimiou, E.   +4 more
core   +1 more source

Impact of process variations and long term degradation on 6T-SRAM cells [PDF]

Advances in Radio Science, 2007
In modern deep-submicron CMOS technologies voltage scaling can not keep up with the scaling of the dimensions of transistors. Therefore the electrical fields inside the transistors are not constant anymore, while scaling down the device area.
Th. Fischer, A. Olbrich, G. Georgakos, B. Lemaitre, D. Schmitt-Landsiedel   +4 more
doaj  

Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs

IEEE Journal of the Electron Devices Society, 2018
The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated.
Sung-Kyu Kwon, Hyuk-Min Kwon, In-Shik Han, Jae-Hyung Jang, Sun-Ho Oh, Hyeong-Sub Song, Byoung-Seok Park, Yi-Sun Chung, Jung-Hwan Lee, Si-Bum Kim, Ga-Won Lee, Hi-Deok Lee   +11 more
doaj   +1 more source

Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
GaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal   +4 more
doaj   +1 more source

A Two-Level Thermal Cycling-Aware Task Mapping Technique for Reliability Management in Manycore Systems

IEEE Access
Reliability management is one of the primary concerns in manycore systems design. Different aging mechanisms such as Negative-Bias Temperature Instability (NBTI), Electromigration (EM), and thermal cycling (TC) can reduce the reliability of these systems.
Fatemeh Hossein-Khani, Omid Akbari, Muhammad Shafique   +2 more
doaj   +1 more source

Controversial issues in negative bias temperature instability

, 2018
In spite of 50 years of history, there is still no consensus on the basic physics of Negative Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric, currently vie for dominance.
STATHIS, JH, GRASSER, T, MAHAPATRA, S
core   +1 more source

PMOS negative bias temperature instability in an ionizing radiation environment [PDF]

, 2013
As a consequence of the semiconductor industry chasing Moore’s Law, device scaling and changes to the transistor material system have introduced significant emerging reliability concerns that have the potential for drastically shortening device, and ...
Geoghegan, Kevin B.
core   +2 more sources

High Voltage Device Negative Bias Temperature Instability Improvement with Different Process Conditions

, 2011
Drastically device dimension shrinkage and rigorous requirement in automotive era puts Negative Bias Temperature Instability (NBTI) at the forefront of reliability issue recently.
Sang Sool Koo, Deb Kumar Pal, Poh Ching Sim   +2 more
core   +1 more source

(Invited) Charge Trapping and the Negative Bias Temperature Instability

, 2010
During the last couple of years new measurement techniques have provided insight into the physics behind the negative bias temperature instability (NBTI) and indicate that the recoverable component of NBTI is due to some kind of charge trapping.
Grasser, Tibor, Schanovsky, Franz, Hehenberger, Philipp, Philipp Hehenberger, Franz Schanovsky, Paul-Juergen Wagner, Goes, Wolfgang, Wolfgang Goes, Tibor Grasser, Wagner, Paul-Juergen   +9 more
core   +1 more source