Results 61 to 70 of about 204 (157)

Logical Resolving-Based Methodology for Efficient Reliability Analysis. [PDF]

Micromachines (Basel), 2023
Tang Z, Li C, You H, Liu X, Wang Y, Dai Y, Bai G, Lin X.   +7 more
europepmc   +1 more source

Negative-Bias Temperature Instability (NBTI) degradation phenomena in advanced CMOS technologies' submicron devices

, 2005
CMOS transistor scaling-down involves an increase in the manufacturing complexity and brings up reliability as a serious challenge to overcome in recent node technologies. In this context, it is mandatory to characterize and model the various failure mechanisms at the transistor level.
openaire   +1 more source

Device and Circuit Co-Optimization of Split-Controlled Flip-Flops Against Aging Towards Low-Voltage Applications. [PDF]

Micromachines (Basel)
Zhao Y, Tan J, Chen L, Zhu H, Sun Q.
europepmc   +1 more source

Overcoming Ambient Drift and Negative-Bias Temperature Instability in Foundry Carbon Nanotube Transistors. [PDF]

ACS Appl Mater Interfaces
Yu AC, Srimani T, Shulaker MM.
europepmc   +1 more source

A Coupling Mechanism between Flicker Noise and Hot Carrier Degradations in FinFETs. [PDF]

Nanomaterials (Basel), 2023
Liu M, Sun Z, Lu H, Shen C, Zhang L, Wang R, Huang R.   +6 more
europepmc   +1 more source

Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning. [PDF]

Nat Electron, 2022
Knobloch T, Uzlu B, Illarionov YY, Wang Z, Otto M, Filipovic L, Waltl M, Neumaier D, Lemme MC, Grasser T.   +9 more
europepmc   +1 more source

Editorial for the Special Issue on MEMS/NEMS Devices and Applications, 3rd Edition. [PDF]

Micromachines (Basel)
Dai ZX, Ono T, Dai CL.
europepmc   +1 more source

Evaluation on Temperature-Dependent Transient V_T Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization. [PDF]

Micromachines (Basel), 2022
Wang R, Guo H, Hou Q, Lei J, Wang J, Xue J, Liu B, Chen D, Lu H, Zhang R, Zheng Y.   +10 more
europepmc   +1 more source

Stability and Reliability of van der Waals High-κ SrTiO₃ Field-Effect Transistors with Small Hysteresis. [PDF]

ACS Nano
Sattari-Esfahlan SM, Yang AJ, Ghosh R, Zheng W, Rzepa G, Knobloch T, Lanza M, Renshaw Wang X, Grasser T.   +8 more
europepmc   +1 more source

Near-zero hysteresis van der Waals MnAl₂S₄ field-effect transistors with low minimal threshold voltage degradation and high thermal stability. [PDF]

Commun Mater
Sattari-Esfahlan SM, Illarionov Y, Xu F, Provias A, Mirzaei S, Michalička J, Knobloch T, Man O, Zhou Y, Grasser T.   +9 more
europepmc   +1 more source