Results 71 to 80 of about 204 (157)

SRAM-Based PUF Readouts. [PDF]

Sci Data, 2023
Vinagrero S, Martin H, de Bignicourt A, Vatajelu EI, Di Natale G.   +4 more
europepmc   +1 more source

4.11 A/1650 V Sapphire-Substrate GaN MIS-HEMTs with Thin Buffer for Medium-Voltage Power Applications. [PDF]

Micromachines (Basel)
Chen C, Liu Y, Zhou X, Li P, Zhang Y, Yang B, Yang Z, Bai J.   +7 more
europepmc   +1 more source

Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor. [PDF]

Micromachines (Basel), 2022
Liu CH, Huang CR, Wang HC, Kang YJ, Chiu HC, Kao HL, Chu KH, Kuo HC, Chen CT, Chang KJ.   +9 more
europepmc   +1 more source

Hidden Order in the Apparent Chaos of Bias Temperature Instability. [PDF]

Micromachines (Basel)
Bernstein JB.
europepmc   +1 more source

SRAM Cell Design Challenges in Modern Deep Sub-Micron Technologies: An Overview. [PDF]

Micromachines (Basel), 2022
Gul W, Shams M, Al-Khalili D.
europepmc   +1 more source

Power-Law Reliability Plotting for Microelectronics. [PDF]

Micromachines (Basel)
Bernstein JB.
europepmc   +1 more source

Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices. [PDF]

Materials (Basel), 2022
Calzolaro A, Mikolajick T, Wachowiak A.
europepmc   +1 more source

Cross Comparison Between Thermal Cycling and High Temperature Stress on I/O Connection Elements. [PDF]

Micromachines (Basel)
Dhyani M, Avraham T, Bernstein JB, Bender E.   +3 more
europepmc   +1 more source

A Stepped-Spacer FinFET Design for Enhanced Device Performance in FPGA Applications. [PDF]

Micromachines (Basel)
Zareiee M, Mehrad M, Tawfik A.
europepmc   +1 more source

4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process. [PDF]

Nanomaterials (Basel), 2022
Cheng X, Li Y, Zhao F, Chen A, Liu H, Li C, Zhang Q, Yin H, Luo J, Wang W.   +9 more
europepmc   +1 more source