Results 71 to 80 of about 8,396,680 (189)

Negative-bias temperature instability (NBTI) characterization of MOSFETS employing decoupled-plasma-nitrided gate oxides [PDF]

, 2019
MASTER OF ENGINEERING (EEE)
openaire   +2 more sources

Negative Bias Temperature Instability for P-channel of LTPS Thin Film Transistors with Fluorine Implantation

, 2008
This paper studies the impact of LTPS (low temperature polycrystalline silicon) TFTs with fluorine implantation under NBTI (Negative bias temperature instability) stress.
W. H. Sung, Chyuan-Haur Kao
core   +1 more source

Enhanced power performance and threshold voltage stability in quaternary InAlGaN/GaN MIS-HEMTs on Si with gate field plate

Discover Electronics
This work presents GaN-on-Si metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) featuring a quaternary InAlGaN barrier and gate field plate (GFP) for power device applications.
Shivendra Kr. Rathaur, Cheng-Jun Ma, Tsung-Ying Yang, Abhisek Dixit, Edward Yi Chang   +4 more
doaj   +1 more source

A Reinforcement Learning-Based Task Mapping Method to Improve the Reliability of Clustered Manycores

IEEE Access
The increasing scale of manycore systems poses significant challenges in managing reliability while meeting performance demands. Simultaneously, these systems become more susceptible to different aging mechanisms such as negative-bias temperature ...
Fatemeh Hossein-Khani, Omid Akbari
doaj   +1 more source

Device reliability challenges for modern semiconductor circuit design – a review [PDF]

Advances in Radio Science, 2009
Product development based on highly integrated semiconductor circuits faces various challenges. To ensure the function of circuits the electrical parameters of every device must be in a specific window.
C. Schlünder
doaj  

A study of negative bias temperature instability (NBTI) in p-MOSFET devices

, 2017
Negative bias temperature instability (NBTI) is a common phenomenon in a p-channel MOSFET device under a negative gate-to-source voltage at a high stress temperature.
Anis Amalina
core  

Research progresses and challenges in high-k dielectric/SiGe interface passivation technology in SiGe channel devices

Gongneng cailiao yu qijian xuebao
SiGe, characterized by high hole mobility, excellent negative bias temperature instability (NBTI) resistance, and flexible threshold-voltage tunability, exhibits significant potential for sub-5 nm p-type field-effect transistors (pFETs).
Yiran LIN, Choonghyun LEE
doaj   +1 more source

Negative Bias Temperature Instability Analysis of Multi-Bridged-Channel CFETs [PDF]

Complementary Field-Effect Transistors (CFETs) are among the most promising candidates for next-generation technology nodes due to their potential for aggressive footprint scaling, improved density, and reduced parasitics through vertical integration ...
Thoti, Narasimhulu, Komsa, Hannu-Pekka
core   +1 more source

A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs

, 2019
The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET.
Gilson I. Wirth, Silva, Vanessa C. P., Paula G. D. Agopian, Agopian, Paula G. D. [UNESP], Wirth, Gilson I., Martino, Joao A., Vanessa C. P. Silva, Joao A. Martino   +7 more
core   +1 more source

Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire SOI MOSFETs with different dimensions [PDF]

, 2020
This work presents an experimental andThis work presents an experimental and simulated analysis of the Negative-Bias-Temperature-Instability (NBTI) on omega-gate nanowire (NW) pMOSFETS transistors, focusing on the influence of channel length and width ...
Agopian, Paula Ghedini Der, Silva, Vanessa Cristina Pereira da, Martino, João Antonio, Wirth, Gilson Inacio   +3 more
core   +1 more source