Results 51 to 60 of about 204 (157)

Design of Negative Bias Temperature Instability (NBTI) Tolerant Register File

, 2012
Degradation of transistor parameter values due to Negative Bias Temperature Instability (NBTI) has emerged as a major reliability problem in current and future technology generations. NBTI Aging of a Static Random Access Memory (SRAM) cell leads to a lower noise margin, thereby increasing the failure rate.
openaire   +2 more sources

Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
GaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal   +4 more
doaj   +1 more source

A Two-Level Thermal Cycling-Aware Task Mapping Technique for Reliability Management in Manycore Systems

IEEE Access
Reliability management is one of the primary concerns in manycore systems design. Different aging mechanisms such as Negative-Bias Temperature Instability (NBTI), Electromigration (EM), and thermal cycling (TC) can reduce the reliability of these systems.
Fatemeh Hossein-Khani, Omid Akbari, Muhammad Shafique   +2 more
doaj   +1 more source

Negative-bias temperature instability (NBTI) characterization of MOSFETS employing decoupled-plasma-nitrided gate oxides [PDF]

, 2019
MASTER OF ENGINEERING (EEE)
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Enhanced power performance and threshold voltage stability in quaternary InAlGaN/GaN MIS-HEMTs on Si with gate field plate

Discover Electronics
This work presents GaN-on-Si metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) featuring a quaternary InAlGaN barrier and gate field plate (GFP) for power device applications.
Shivendra Kr. Rathaur, Cheng-Jun Ma, Tsung-Ying Yang, Abhisek Dixit, Edward Yi Chang   +4 more
doaj   +1 more source

A Reinforcement Learning-Based Task Mapping Method to Improve the Reliability of Clustered Manycores

IEEE Access
The increasing scale of manycore systems poses significant challenges in managing reliability while meeting performance demands. Simultaneously, these systems become more susceptible to different aging mechanisms such as negative-bias temperature ...
Fatemeh Hossein-Khani, Omid Akbari
doaj   +1 more source

Device reliability challenges for modern semiconductor circuit design – a review [PDF]

Advances in Radio Science, 2009
Product development based on highly integrated semiconductor circuits faces various challenges. To ensure the function of circuits the electrical parameters of every device must be in a specific window.
C. Schlünder
doaj  

Research progresses and challenges in high-k dielectric/SiGe interface passivation technology in SiGe channel devices

Gongneng cailiao yu qijian xuebao
SiGe, characterized by high hole mobility, excellent negative bias temperature instability (NBTI) resistance, and flexible threshold-voltage tunability, exhibits significant potential for sub-5 nm p-type field-effect transistors (pFETs).
Yiran LIN, Choonghyun LEE
doaj   +1 more source

CFET Beyond 3 nm: SRAM Reliability Under Design-Time and Run-Time Variability

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This work investigates the reliability of complementary field-effect transistors (CFETs) by addressing both design-time variability arising from process variations and run-time variability due to temperature and aging effects.
Sufia Shahin, Swati Deshwal, Anirban Kar, Mahdi Benkhelifa, Yogesh S. Chauhan, Hussam Amrouch   +5 more
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Negative Bias Temperature Instability (NBTI) Monitoring and Mitigation Technique for MOSFET

Negative Bias Temperature Instability (NBTI) Monitoring and Mitigation Technique for MOSFET
Thesis or Dissertation ...
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