Results 31 to 40 of about 177,246 (262)

Negative Capacitance Transistors

Proceedings of the IEEE, 2019
In recent years, the negative capacitance effect in ferroelectric (FE) materials has attracted significant attention from many researchers around the world. The negative capacitance effect promises to reduce the voltage requirement in conventional complementary metal–oxide–semiconductor transistors below what is otherwise believed to be the Boltzmann ...
Justin C. Wong, Sayeef Salahuddin
openaire   +1 more source

Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors

IEEE Journal of the Electron Devices Society, 2020
In this study, the negative DIBL (N-DIBL), negative differential resistance (NDR), and Miller effect of a negative capacitance nanowire filed-effect-transistor (negative capacitance (NC) NWFET) were analyzed by employing the custom-built SPICE model.
Weixing Huang, Huilong Zhu, Zhenhua Wu, Xiaogen Yin, Qiang Huo, Kunpeng Jia, Yangyang Li, Yongkui Zhang   +7 more
doaj   +1 more source

Strain control of layer-resolved negative capacitance in superlattices

npj Computational Materials, 2020
Negative capacitance in BaTiO3/SrTiO3 superlattices is investigated by Monte Carlo simulations in an atomistic effective Hamiltonian model, using fluctuation formulas for responses to the local macroscopic field that incorporates depolarizing fields.
Raymond Walter, Sergey Prosandeev, Charles Paillard, L. Bellaiche   +3 more
doaj   +1 more source

Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?

Фізика і хімія твердого тіла, 2022
We analyze the electric potential and field, polarization and charge, and differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin layers of dielectric SiO2 and weak ...
E. A. Eliseev, A. N. Morozovska, L. P. Yurchenko, M. V. Strikha   +3 more
doaj   +1 more source

The Difference in the Effects of IR-Drop from the Negative Capacitance of Fast Cyclic Voltammograms

Electrochem, 2023
Diffusion-controlled cyclic voltammograms at fast scan rates show peak shifts, as well as decreases in the peak currents from predicted diffusion-controlled currents, especially when the currents are large in a low concentration of supporting ...
Yuanyuan Liu, Koichi Jeremiah Aoki, Jingyuan Chen   +2 more
doaj   +1 more source

Scaling Design Effects on Surface Buffer IGBT Characteristics

IEEE Journal of the Electron Devices Society, 2022
Scaling design effects on surface buffer (SB) insulated gate bipolar transistor (IGBT) is analyzed not only for power loss reduction but also for switching controllability and robustness using TCAD simulation.
Wataru Saito, Shin-Ichi Nishizawa
doaj   +1 more source

Negative capacitance in a ferroelectric capacitor

Nature Materials, 2014
The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of phase transition, could provide a solution, but a direct measurement of negative capacitance has so far ...
Khan, Asif Islam, Chatterjee, Korok, Wang, Brian, Drapcho, Steven, You, Long, Serrao, Claudy, Bakaul, Saidur Rahman, Ramesh, Ramamoorthy, Salahuddin, Sayeef   +8 more
openaire   +3 more sources

Nonhysteretic Condition in Negative Capacitance Junctionless FETs [PDF]

IEEE Transactions on Electron Devices, 2022
This paper analyzes the design space stability of negative capacitance double gate junctionless FETs (NCDG JLFET). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, and critical thickness of the ferroelectric layers giving rise to the negative capacitance behavior.
Amin Rassekh, Farzan Jazaeri, Jean-Michel Sallese   +2 more
openaire   +2 more sources

Junction Design and Complementary Capacitance Matching for NCFET CMOS Logic

IEEE Journal of the Electron Devices Society, 2021
Negative capacitance field effect transistors (NCFETs) are modeled in this study, with an emphasis on junction design, implications of complementary logic, and device $V_{t}$ menu enablement.
Reinaldo A. Vega, Takashi Ando, Timothy M. Philip   +2 more
doaj   +1 more source

A New Method to Synthesise the Sinusoidal Oscillator Based on Series Negative Resistance-Capacitance and its Implementation Using a Single Commercial IC, LT1228

Elektronika ir Elektrotechnika, 2023
An alternative method for synthesising the sinusoidal oscillator based on series negative resistance-capacitance is presented in this paper. The proposed topology is constructed with the series negative resistance-capacitance circuit connected in ...
Worawut Kulapong, Winai Jaikla, Surapong Siripongdee, Roman Sotner, Peerawut Suwanjan, Amornchai Chaichana   +5 more
doaj   +1 more source